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    MJE243 TRANSISTOR Search Results

    MJE243 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MJE243 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJE243 MOTOROLA

    Abstract: MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100
    Contextual Info: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —


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    MJE243/D MJE243* MJE253* MJE243, MJE253 MJE243/D* MJE243 MOTOROLA MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100 PDF

    MJE243G

    Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
    Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


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    MJE243 MJE253 O-225 MJE243G to225 PD15120 MJE253G to-225 pd 242 PDF

    mje243

    Abstract: mje253 mje253 transistor 200 watts audio amp power transistors
    Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —


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    MJE243 MJE253 MJE243, MJE253 mje243 mje253 transistor 200 watts audio amp power transistors PDF

    MJE243

    Abstract: MJE253 MJE243 equivalent transistor MJE243 equivalent mje243 transistor mje253 transistor 1N5825 MSD6100
    Contextual Info: ON Semiconductort NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


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    MJE243 MJE253 MJE243, r14525 MJE243/D MJE243 MJE253 MJE243 equivalent transistor MJE243 equivalent mje243 transistor mje253 transistor 1N5825 MSD6100 PDF

    transistor MJE243 equivalent

    Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —


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    MJE243, MJE253 MJE243* MJE253* TIP73B TIP74 TIP74A TIP74B transistor MJE243 equivalent mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100 PDF

    MJE243G

    Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
    Contextual Info: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


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    MJE243 MJE253 O-225d MJE243/D MJE243G MJE-253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor PDF

    mje253

    Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS


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    MJE243 MJE253 MJE243/D PDF

    MJE243

    Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
    Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS


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    MJE243 MJE253 O-225 MJE243/D MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253G MSD6100 PDF

    mje243

    Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS


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    MJE243 MJE253 MJE243/D PDF

    Contextual Info: MJE243 NPN , MJE253 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • http://onsemi.com 4.0 AMPERES POWER TRANSISTORS


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    MJE243 MJE253 MJE243/D PDF

    mje243 transistor

    Abstract: MJE253 MJE243 equivalent MJE243
    Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


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    MJE243 MJE253 MJE243, r14525 MJE243/D mje243 transistor MJE253 MJE243 equivalent MJE243 PDF

    JE253

    Abstract: JE243 JE233
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors MJE243* . . . designed for low power audio amplifier and low-current, high-speed switching applications. MJE253* NPN PNP • High Collector-Emitter Sustaining Voltage —


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    MJE243, MJE253 JE253 JE243 JE233 PDF

    MJE243 equivalent

    Abstract: MJE243 MJE253 to126 pin out
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications


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    MJE243 O-126 MJE253 C-120 MJE243Rev050102 MJE243 equivalent MJE243 MJE253 to126 pin out PDF

    JE243

    Abstract: JE253 je 243 Transistor 834
    Contextual Info: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •


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    MJE243/D MJE243, MJE253 O-225AA JE243 JE253 je 243 Transistor 834 PDF

    MJE243

    Abstract: MJE253 to126 pin out
    Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications


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    ISO/TS16949 MJE243 O-126 MJE253 C-120 MJE243Rev050102 MJE243 MJE253 to126 pin out PDF

    Transistor 834

    Abstract: TRANSISTOR B 834 transistor MJE253 equivalent transistor MJE243 equivalent MJE253 MJE243 equivalent Vce(sat) MJE243 VCEO 100V TRANSISTOR 834 IC
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE243 DESCRIPTION •Collector–Emitter Sustaining Voltage: VCEO SUS = 100 V(Min) ·DC Current Gain: hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A


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    MJE243 MJE253 10MHz Transistor 834 TRANSISTOR B 834 transistor MJE253 equivalent transistor MJE243 equivalent MJE253 MJE243 equivalent Vce(sat) MJE243 VCEO 100V TRANSISTOR 834 IC PDF

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications


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    MJE243 O-126 MJE253 C-120 MJE243Rev050102 PDF

    je240

    Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
    Contextual Info: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


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    T-33-17 M1E240, MJE241 MJE243, MJE244 MJE250 MIE254 MJE240, MJE243/4, MJE253/4 je240 MJE263 mje240 JE250 MJE244 mje260 mje252 mjE26 PDF

    MJE240

    Abstract: MJE243 MJE250 MJE244 MJE251 MJE241 MJE242 MJE252 MJE253 MJE254
    Contextual Info: Datasheet Central MJE240 THRU MJE244 NPN MJE250 THRU MJE254 PNP Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO— 126 GASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan
    MJE240 MJE244 MJE250 MJE254 O-126 MJE240, 200mA 500mA MJE243 MJE251 MJE241 MJE242 MJE252 MJE253 PDF

    Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


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    MJE243G MJE253Gâ MJE243/D PDF

    Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


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    MJE243G MJE253Gâ MJE243/D PDF

    2N6410

    Abstract: MJE251 MJE170 motorola 2N6412 2N6415 MJE250 MJE241 parameters S transistor NPN motorola MJE171 MJE222
    Contextual Info: MOTORÔLA~SC iDIODES/OPTOJ 34 6 3 6 7 2 5 5 M O T O R O L A SC DE | t 3 b ? S S S O D B T T m {D I O D E S / O P T O 34C 4 37964 SILICON POWER TRANSISTOR DICE continued) MJEC244 DIE NO. — NPN LINE SOURCE — PL500.E22 PNP NPN ÉSkâSk Complimentary transistors


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    PL500 MJEC244 MJEC254 2N6412 2N6413 MDS26 MDS27 MJE180 MJE181 2N6410 MJE251 MJE170 motorola 2N6415 MJE250 MJE241 parameters S transistor NPN motorola MJE171 MJE222 PDF

    BD786

    Abstract: B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677 BD185
    Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-126 Package (continued) R esistive Sw itching lcCont ^ C E O (sua) Amps Max Volts Min 4 NPN PNP ^FE M in/M ax @ lc Arrip ts t( US @ lc fr MHZ PD (Case) US Max Max Amp Min @ 25°C Watts 20 BD433 BD434 50 min


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    O-126 BD433 BD434 BD185 BD186 BD435 BD436 2N5190 2N5193 2N6037 BD786 B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677 PDF

    MJE241

    Abstract: Power Transistors TO-126 Case MJe340 350 MJE222 mje520
    Contextual Info: Power Transistors TO-126 Case Continued Top View TYPE NO. •c (A) PD (W) MAX bvcbo BVCEO hi *E @ lc (V) 00 mm MIN MIN MAX (*BA) Bottom View VCE(SAT) 1C (V) (A) fT (MHz) NPN PUP MJE180 MJE170 3.0 15 60 40 50 250 100 0.3 0.5 50 MJE181 MJE171 3.0 15 80


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    O-126 MJE370 MJE371 MJE710 MJE711 MJE712 MJE700 MJE701 MJE702 MJE241 Power Transistors TO-126 Case MJe340 350 MJE222 mje520 PDF