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    MJE180 Search Results

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    MJE180 Price and Stock

    Rochester Electronics LLC MJE18002G

    TRANS NPN 450V 2A TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE18002G Tube 65,841 513
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    • 1000 $0.59
    • 10000 $0.59
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    Rochester Electronics LLC MJE18002D2

    TRANS NPN 450V 2A TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE18002D2 Bulk 13,900 650
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    • 1000 $0.46
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    Rochester Electronics LLC MJE18006G

    TRANS NPN 450V 6A TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE18006G Tube 12,824 310
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    • 1000 $0.97
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    Rochester Electronics LLC MJE180STU

    TRANS NPN 40V 3A TO-126-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE180STU Bulk 10,080 1,092
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    Rochester Electronics LLC MJE18002

    TRANS NPN 450V 2A TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE18002 Tube 4,437 1,025
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    Find more MJE180 price and stock on Findchips.com

    MJE180 Datasheets (161)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJE180 Continental Device India Plastic Power Transistor Original PDF
    MJE180 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    MJE180 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    MJE180 On Semiconductor Complementary Plastic Silicon Power Transistors Original PDF
    MJE180 On Semiconductor MJE180 - TRANSISTOR 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN, BIP General Purpose Power Original PDF
    MJE180 Central Semiconductor Silicon Power Transistor, TO-126 Scan PDF
    MJE180 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    MJE180 Mospec POWER TRANSISTORS(3.0A,40-80V,12.5W) Scan PDF
    MJE180 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE180 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJE180 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJE180 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJE180 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJE180 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJE180 Unknown Transistor Replacements Scan PDF
    MJE180 Unknown Transistor Replacements Scan PDF
    MJE180 Unknown Transistor Replacements Scan PDF
    MJE180 Unknown Transistor Replacements Scan PDF
    MJE180 Unknown Cross Reference Datasheet Scan PDF
    MJE180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    MJE180 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    to225a

    Abstract: to225aa TO-225AA to225
    Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170/180 MJE180 to225a to225aa TO-225AA to225 PDF

    MJE18006

    Abstract: IC13A
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS


    Original     		MJE18006 O-220C Cycle10% MJE18006 IC13A PDF

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 PDF

    221D

    Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art


    Original     		MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 PDF

    221D

    Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES


    Original     		MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient


    OCR Scan     		MJE18002D2/D MJE18002D2 MJE18002D2 PDF

    MJE180

    Abstract: MJE181 MJE182
    Text: MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : MJE180 : MJE181 : MJE182 Collector-Emitter Voltage


    Original     		MJE180/181/182 O-126 MJE180 MJE181 MJE182 MJE180 MJE181 MJE182 PDF

    221D

    Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


    Original     		MJE18009/D MJE18009 MJF18009 MJE/MJF18009 E69369 MJE18009/D* 221D MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    221D

    Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES


    Original     		MJE18008/D* MJE18008/D 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105 PDF

    mjf18004

    Abstract: No abstract text available
    Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art


    Original     		MJE/MJF18004 MJE18004 MJF18004 AN1040. mjf18004 PDF

    MJE18002G

    Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		MJE18002G MJE18002G O-220 O-220AB 21A-09 MJE18002/D MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^zml-tonauctoi U^i , Lfnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor MJE18006 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed


    Original     		MJE18006 O-220C PDF

    MJE18004D2

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 2A200
    Text: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar


    Original     		MJE18004D2 MJE18004D2 MJE18004D2/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 2A200 PDF

    MJE182

    Abstract: MJE180 MJE181 t01 transistor NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DC Current gain 100
    Text: MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector-B ase V o lta g e : MJE180 Sym bol Rating 60 V cbO Unit V : MJE181


    OCR Scan     		MJE180/181/182 MJE180 MJE181 MJE182 MJE180 MJE182 MJE181 t01 transistor NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DC Current gain 100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http://onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.


    Original     		MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170/180 MJE180 PDF

    2sc1826 transistor

    Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed


    Original     		MJE18008 MJF18008 MJE/MJF18008 MJF18008, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2sc1826 transistor MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147 PDF

    MJE105

    Abstract: 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS The MJE/MJF18002 have an applications specific state–of–the–art die designed


    Original     		MJE/MJF18002 MJF18002, E69369 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE105 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st PDF

    vce 1200 and 5 amps npn transistor to 220 pack

    Abstract: MJF18002 221D MJE18002 MJE210 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The MJE/MJF18002 have an applications specific state–of–the–art die designed


    Original     		MJE18002/D MJE18002* MJF18002* MJE/MJF18002 MJE18002/D* vce 1200 and 5 amps npn transistor to 220 pack MJF18002 221D MJE18002 MJE210 MPF930 MTP8P10 MUR105 PDF

    MJE18002D2

    Abstract: No abstract text available
    Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJE18002D2 POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS The MJE18002D2 use a newly developed technology, so called


    Original     		MJE18002D2 MJE18002D2 r14525 MJE18002D2/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.


    Original     		MJE18006G MJE18006G 220AB MJE18006/D PDF

    MJE18002

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification MJE18002 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballast


    Original     		MJE18002 O-220 Cycle10% MJE18002 PDF

    MJE170

    Abstract: MJE171 MJE172 MJE180 MJE181 MJE182
    Text: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. CO LLECTO R


    OCR Scan     		MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170 MJE171 MJE180 MJE181 MJE182 PDF

    JE170

    Abstract: No abstract text available
    Text: TRSISB? 005^075 7 • SGS-THOMSON s[UiOT !D gS r~ p 3 3 - Q ~ 7 MJ E170/171 /172 MJ E180/181 /182 S G S-THOMSON 3ÜE » COMPLEMENTARY POWER TRANSISTORS DESCRIPTIO N The MJE 170, MJE171, MJE172 (PNP types and MJE180, MJE181, MJE182 (NPN types) are silicon


    OCR Scan     		p33-Q E170/171 E180/181 MJE171, MJE172 MJE180, MJE181, MJE182 O-126 MJE170 JE170 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS T O -126 ABSOLUTE MAXIMUM RATINGS C haracteristic Col lector-Base V oltage : MJE180 Sym bol Rating Unit 60 V 80 V 100 V


    OCR Scan     		MJE180/181/182 MJE180 MJE181 MJE182 PDF