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    onsemi MJ11016G

    TRANS NPN DARL 120V 30A TO204
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    onsemi MJ11015G

    TRANS PNP DARL 120V 30A TO204
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    onsemi MJ11012G

    TRANS NPN DARL 60V 30A TO204
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    onsemi MJ11016

    TRANS NPN DARL 120V 30A TO204
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    Central Semiconductor Corp MJ11013-PBFREE

    30A 90V TH TRANSISTOR-BIPOLAR PO
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    DigiKey MJ11013-PBFREE Tube 100
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    MJ1101 Datasheets (110)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ11011 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ11011 Wing Shing Computer Components PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
    MJ11011 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11011 Mospec POWER TRANSISTORS(30A,60-120V,200W) Scan PDF
    MJ11011 Mospec Complementary Silicon Power Darlington Transistor Scan PDF
    MJ11011 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ11011 Motorola European Master Selection Guide 1986 Scan PDF
    MJ11011 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ11011 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ11011 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ11011 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ11011 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MJ11012 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ11012 Motorola 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS Original PDF
    MJ11012 On Semiconductor High-Current Complementary Silicon Transistors Original PDF
    MJ11012 Wing Shing Computer Components NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
    MJ11012 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11012 Mospec POWER TRANSISTORS(30A,60-120V,200W) Scan PDF
    MJ11012 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ11012 Motorola European Master Selection Guide 1986 Scan PDF

    MJ1101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    inverters

    Abstract: MJ11017
    Text: PNP MJ11017 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original
    MJ11017 -150V inverters MJ11017 PDF

    npn DARLINGTON 10A

    Abstract: MJ11018
    Text: NPN MJ11018 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original
    MJ11018 npn DARLINGTON 10A MJ11018 PDF

    MJ11021

    Abstract: mj11011 MJ11017 MJ11018 MJ11019 MJ11020 MJ11022 transistor revers characteristic transistor MJ11020
    Text: ÆàMOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS PNP NPN MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 .designed for use as general purpose amplifiers,low frequency switching and motor control applications. FEATURES: * High Gain Darlington Performance


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    MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 MJ11020 mj11011 MJ11018 MJ11022 transistor revers characteristic transistor MJ11020 PDF

    MJ11017

    Abstract: darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MJ11018 MJ11022 MSD6100 transistor pnp 3015
    Text: MOTOROLA Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP M J11017 Com plem entary Darlington Silicon Power Transistors M J1 1 021* NPN . . . d e sig ned fo r use as ge ne ral pu rpo se am plifiers, low fre q u e n cy sw itch ing and m otor con tro l applications.


    OCR Scan
    MJ11017/D MJ11018, MJ11022, MJ11017 MJ11021 MJ11018 MJ11022 MJ11022 darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MSD6100 transistor pnp 3015 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11013 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    MJ11013 O204AA) 16-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11016 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    MJ11016 O204AA) 18-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11013 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    MJ11013 O204AA) 18-Jun-02 PDF

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


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    MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T PDF

    MJ11015G

    Abstract: MJ11016G mj110156 MJ11016 MJ11015 MJ11012 MJ11012G T172 MJ1101x
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


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    MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11015, MJ11015G MJ11016G mj110156 MJ11015 MJ11012 MJ11012G T172 MJ1101x PDF

    Mj11015

    Abstract: No abstract text available
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


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    MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D Mj11015 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11011 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200


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    MJ11011 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11017 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400


    Original
    MJ11017 time500n PDF

    MJ11016

    Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015
    Text: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


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    MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016 MJ11011, MJ11011 MJ11012 MJ11013 P003N MALAYSIA MJ11015 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11014 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    MJ11014 O204AA) 18-Jun-02 PDF

    Vcb-60V

    Abstract: MJ11012
    Text: NPN MJ11012 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


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    MJ11012 Vcb-60V MJ11012 PDF

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
    Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.


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    MJ11015, MJ11015 MJ11016 pin diagram of ic 4066 ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors PDF

    MJ11015G

    Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


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    MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D MJ11015G MJ11016G MJ11015 MJ11012 MJ11012G npn darlington transistor pnp 3015 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11012 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200


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    MJ11012 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ11019 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400


    Original
    MJ11019 time500n PDF

    mj11015

    Abstract: MJ11014 MJ11011
    Text: r Z T S G S -T H O M MJ11011/1 3/15 MJ11012/14/16 S O N mlM MiniaMgnigCTfsiMiKe^ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016are silicon


    OCR Scan
    MJ11011/1 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016are MJ11011, MJ11011 PDF

    MJ11016

    Abstract: No abstract text available
    Text: MJ11016 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    MJ11016 O204AA) 31-Jul-02 MJ11016 PDF

    mj11015

    Abstract: pnp resistor mj11012 transistor MJ11016
    Text: ON Semiconductort PNP High−Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — hFE = 1000 Min @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor


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    MJ11015 MJ11012 MJ11016 pnp resistor transistor MJ11016 PDF

    mj11015

    Abstract: mj11011
    Text: MOTOROLA SC 12E 0 § b3b?2S4 00ÖS074 T | XSTRS/R F T-33^9 7 ^ 3 3 -3 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP npn' Ml 11011 Ml 11013 MJ11015 Ml 11012 MJ11014 MJ11016 H IG H -C U R R E N T C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S 30 A M P E R E


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    mj11011

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP M J11013 High-C urrent Com plem entary Silicon Transistors M J11015 NPN M J11012 . . . for use as output devices in complementary general purpose amplifier applica­ tions. • •


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