MINTECH Search Results

UC1637

Contextual Info: Mintech Semiconductors Ltd 2 Hellesdon Park Road Drayton High Road Norwich Norfolk NR6 5DR England Tel +44 0 1603 788967 Fax +44(0)1603 788920 Email sales@mintech.co.uk Web www.mintech.co.uk 18 17 15 14 13 PAD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

analog devices die list

Abstract: 54AC245 74ACT04 LM108 LM137K SCAN18373T SCAN18374T SCANPSC100F SCANPSC110F
Contextual Info: N VOLUME NO. 2 1999 BARE DIE USE IS GROWING RAPIDLY CONTENTS he rapid demand for smaller and PAGE 1 Bare Die Use is Growing BARE DIE MEET smaller consumer products is Rapidly pushing designers and manufacQUALITY, RELIABILITY, Page 2 Boundary Scan Assists turers to reassess their selection of comAND PERFORMANCE

DUT1508AL

Abstract: DUT1508ALN DUT1508-GG DUT1508S DUT1508 DUT1508-AG
Contextual Info: August 2009 DUT1508 – 800V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUL1506

Abstract: DUL1506-AG DUL1506AL DUL1506ALN DUL1506-GG DUL1506S silicon carbide
Contextual Info: August 2009 DUL1506 – 600V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

Mintech Semiconductors

Abstract: M128S32
Contextual Info: M128S32 128K x 32 Fast SRAM Issue 1.0 July 2003 General Description Features The M128S32 is a high reliability 4Mbit fast static ram housed in high temperature co-fired ceramic. Access times are 20, 25 or 35ns, with 15 & 17ns in development. For surface mount applications there

LM358 RF receiver module

Abstract: DS26C31T light sensor lm324 and lm339 in circuit functions light sensor in lm324 and lm339 LM324 temperature controller LM386-1 LM723 LMX2336 detonators functions light sensor in lm324
Contextual Info: N VOLUME NO. 5 2000 THE PROLIFERATION OF DIE PRODUCTS COMMUNICATION SYSTEMS he trend in the electronics industry is toward smaller and lighter with higher performance. Fueling this trend is continuing silicon integration as well as advanced packaging technologies. The ultimate "packaging" technology in terms of supporting

DUT1507

Abstract: DUT1507-AG DUT1507AL DUT1507ALN DUT1507-GG DUT1507S to-276ab CLIFTON
Contextual Info: August 2009 DUT1507 – 700V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUL1504

Abstract: DUL1504-AG DUL1504AL DUL1504ALN DUL1504-GG DUL1504S
Contextual Info: August 2009 DUL1504 – 400V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

seam seal process

Abstract: LMC7255 Minco Products PC16552 LMC668
Contextual Info: N ANALYSIS OF VOLUME NO. 6 2000 DIE ASSEMBLY TECHNIQUES CONTENTS PAGE 1 ystem and board manufacturers that use bare die or flip-chip – such as National Semiconductor’s Die Products – have access to a wide variety of assembly methods that will produce high yield, high reliability systems. The following review of

outsourcing IBM

Abstract: avnet celestica flextronics national semiconductor CC
Contextual Info: Considerations in Converting from SMT to Die Assemblies National Semiconductor Technical Seminar Series Die Product Business Unit June 26 2003 1 Approaches, Options & Solutions • Die conversion trends and drivers • Die interconnect approaches • Device and information resources

Mintech Semiconductors

Abstract: M128 D28A0 M128E32 M128E32G-
Contextual Info: M128E32 128K x 32 EEPROM Issue 2.0 June 2004 General Description Features 4 Megabit EEPROM module. Access Times of 120/150/200 ns. Output Configurable as 32/ 16/ 8 bit wide. Upgradeable footprint Operating Power 1600/ 830/ 445 mW Max . Low Power Standby 2.2 mW (Max).

Contextual Info: MP1000VS32JC 1M x 32 Fast SRAM PLCC Issue 1.0 December 2005 General Description Features The MP1000VS32JC device is a 1M x 32 SRAM module housed in a 68 Jleaded package which complies with the JEDEC 68 PLCC standard. Access times of 12, 15 or 20 ns are available. The 3V device is

SST511

Contextual Info: SST511 Linear Systems replaces discontinued Siliconix SST511 Current Regulator Diode — POV min 45 V Features: Description: Surface-Mount Package Guaranteed ±20% Tolerance POV (min) 45V Good Temperature Stability The SST511 belongs to a family of ±20% range current

LM6462

Abstract: LM6464 LM103-3.6 54ACT3301 38510R75001 SMD MARKING CODE ACQ lm1242 MM54HC564 LH0041CJ 54AC00
Contextual Info: N 4 N TABLE OF CONTENTS Included in this guide are the Enhanced Solutions products that are offered by National Semiconductor, their qualification levels, and packages as well as available process flows, radiation testing, and other information that can support your design.

DUT1505

Abstract: DUT1505-AG DUT1505AL DUT1505ALN DUT1505-GG DUT1505S silicon carbide
Contextual Info: August 2009 DUT1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

RF CONTROLLED ROBOT

Abstract: Mil-STD-198 RF CONTROLLED ROBOT with wireless camera register electronica unitrode manual VLSI Vision LM2595 LM2595J-ADJ-QML M38510 USD245
Contextual Info: Volume No. 18 2000 Welcome to the Year 2000 CONTENTS At this time of year everyone tends to review the last year and look forward to the new. During the last year, the high reliability market has changed with the pendulum seemingly swinging back toward the use of military-grade components; however, many

teradyne victory

Abstract: LMX2305WG-QML LMX2305WG-MLS CLC452 LMX2305 LMX2315 LMX2315WG-QML LMX2325 LMX2326 LMX2330
Contextual Info: VOLUME NO. 15 1998 Phase Lock Loops Qualified for Military and Space Applications T oday’s communications and signal processing design requirements dictate more processing capacity in smaller volumes, operation for longer periods of time, and lower power consumption.

linear application handbooks national semiconductor

Abstract: F100K ECL Users Handbook JEP133 bipolar cots radiation radiation hard PLL national semiconductor logic 1981 cmos cots radiation lvds pioneer linear application handbook national semiconductor AN-926
Contextual Info: N Total Ionizing Dose Radiation Data krads, typical 10 30 50 Analog CMOS Op Amps Bipolar Op Amps Comlinear Comparators Data Acquisition References Regulators Low Dropout Voltage Regulators Motor Drivers Phased Lock Loops (PLL) ASIC CMOS Gate Array (.65µm)

JM38510/01405BEA

Abstract: EPROM databook AMD pcb repair 54AC299 5962-8961501QXA 5962-8961501VPA DS16F95 DS16F95J-QMLV JM38510 54AC273DMQB
Contextual Info: N VOLUME NO. 16 1999 1999 WILL HAVE MANY CHALLENGES A s we enter 1999, the many changes that started in the Military/Aerospace market over the past few years continue unabated. Driven by the need to use the latest technology and the government’s initiative to reduce the acquisition cost of equipment, we have seen:

10GHz clock oscillator

Abstract: MC10xxx NBSG14 MC12095 laser driver, STM-64 500MHz Frequency Counter Using MECL 10K3 NBSG11 DL122-D NBSG16
Contextual Info: BRD8017/D Rev. 4, Apr-2002 Clock and Data Management Solutions High Performance Data Management, Advanced Clock Management and Communication ASSPs ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes

DUL1505

Abstract: DUL1505-AG DUL1505AL DUL1505ALN DUL1505-GG DUL1505S
Contextual Info: August 2009 DUL1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

2SK170BL

Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
Contextual Info: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual

500MHz Frequency Counter Using MECL

Abstract: 10GHz counters MC12095 mc12080 llc converter spice model AN-1402 DL122-D NBSG14
Contextual Info: BRD8017/D Rev. 3, Nov-2001 Broadband Solutions High Performance Digital, Advanced Clock Management and Communication ASSPs ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

mintech

Contextual Info: M512S32 512K x 32 Fast SRAM Issue 2.0 July 2004 General Description Features The M512S32 is a hi-rel grade16Mbit fast Static RAM multichip module, that is normally organised as 512Kx32 bits wide , but can also be user configured as 1Mx16 or 2Mx8. Access times are available as 20,