Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE MIG10J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10J855H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Integrates Inverter, Converter Power Circuits in One Package. ● Output Inverter Stage :
|
Original
|
MIG10J855H
0A/600V
0A/800V
961001EAAT
IC-10A
|
PDF
|
MIG10J503H
Abstract: No abstract text available
Text: MIG10J503H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503H MIG10J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
|
Original
|
MIG10J503H
MIG10J503H
|
PDF
|
MIG10J503L
Abstract: No abstract text available
Text: MIG10J503L TOSHIBA Intelligent Power Module MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
|
Original
|
MIG10J503L
MIG10J503L
|
PDF
|
MIG10J504H
Abstract: No abstract text available
Text: MIG10J504H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J504H Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.
|
Original
|
MIG10J504H
MIG10J504H
|
PDF
|
1gbt
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE MIG10J805H TOSHIBA INTEGRATED 1GBT MODULE SILICON N CHANNEL 1GBT MIG10J805H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Integrates Inverter, Converter Power Circuits in One Package ● Output Inverter Stage :
|
Original
|
MIG10J805H
0A/600V
0A/800V
961001EAAT
1gbt
|
PDF
|
MIG10J503L
Abstract: No abstract text available
Text: MIG10J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
|
Original
|
MIG10J503L
MIG10J503L
|
PDF
|
MIG10J503H
Abstract: MIG10J503 300VVcc
Text: MIG10J503H TOSHIBA Intelligent Power Module MIG10J503H MIG10J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
|
Original
|
MIG10J503H
MIG10J503H
MIG10J503
300VVcc
|
PDF
|
MIG10J503
Abstract: Toshiba confidential FRD CV Tentative
Text: TENTATIVE MIG10J503 TOSHIBA INTELLIGENT POWER MODULE MIG10J503 MIG10J503 is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI silicon-on-insulator
|
Original
|
MIG10J503
MIG10J503
Toshiba confidential
FRD CV
Tentative
|
PDF
|
TOSHIBA IGBT DATA BOOK
Abstract: MIG10J504H
Text: MIG10J504H TOSHIBA Intelligent IGBT Module MIG10J504H Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •
|
Original
|
MIG10J504H
TOSHIBA IGBT DATA BOOK
MIG10J504H
|
PDF
|
MIG20J503L
Abstract: LNA bluetooth TC59LM818DMB TG2210FT TG2211FT TG2213S TG2214S TG2216TU mig20j503h MIG15J503L
Text: 東芝半導体情報誌アイ 2002年12月号 II N N FF O O RR M M AA TT II O ON N 1 米国サンディスクと90ナノメートルNAND型 フラッシュメモリ・プロセス技術を共同開発 4Gb NAND型フラッシュメモリも開発 当社はNAND型フラッシュメモリの供給能力増大と競争力強化を図るため、
|
Original
|
70nm55nm
TC59LM818DMB
400MHz
13mFCRAM
400m2
200m2
MIG20J503L
LNA bluetooth
TC59LM818DMB
TG2210FT
TG2211FT
TG2213S
TG2214S
TG2216TU
mig20j503h
MIG15J503L
|
PDF
|
mig10J
Abstract: No abstract text available
Text: TOSHIBA MIG10J855H TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10 J855H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage :
|
OCR Scan
|
MIG10J855H
MIG10
J855H
0A/600V
0A/800V
mig10J
|
PDF
|
mig10J
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE M IG 1 0 J855 E TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10J855E HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage
|
OCR Scan
|
MIG10J855E
2-81B1A
961001EAA1
stres00
mig10J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE MIG10J805H TOSHIBA INTEGRATED IG BT MODULE SILICON N CHANNEL 1GBT M I G 1 J 8 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • 5 H Units in mm GXGYGZE Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage :
|
OCR Scan
|
MIG10J805H
/600V
/800V
961001EAAT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG10J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT TEN TA TIV E MIG10J855H Units in mm HIGH P O W ER SW ITC H IN G A PPLIC A TIO N S M O TO R C O N TR O L A PPLIC A TIO N S • Integrates Inverter, Converter Power Circuits in One Package.
|
OCR Scan
|
MIG10J855H
0A/600V
0A/800V
961001EAAT
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE M IG10J855 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10J855 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage
|
OCR Scan
|
IG10J855
MIG10J855
0A/600V
961001EAA1
|
PDF
|
mig10J
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE MIG10J805H TOSHIBA INTEGRATED 1GBT MODULE SILICON N CHANNEL 1GBT M IG 10J805H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS GXGYGZE • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage :
|
OCR Scan
|
MIG10J805H
10J805H
0A/600V
0A/800V
mig10J
|
PDF
|
P channel 600v 20a IGBT
Abstract: MIG10J805 n channel 600v 20a IGBT mig10J
Text: T O SH IB A TENTATIVE M IG10J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10J805 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage
|
OCR Scan
|
MIG10J805
0A/600V
0A/800V
2-81B1A
961001EAA1
P channel 600v 20a IGBT
MIG10J805
n channel 600v 20a IGBT
mig10J
|
PDF
|
MG200J2YS21
Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9
|
OCR Scan
|
MG100J1BS11
MG100J2YS1
MG100J2YS9
MG100J2YS40
MG100J2YS91
MG100J6ES1
MG100J6ES40
MG100J6ES45
MG100J6ES91
MG100M2YK1
MG200J2YS21
MG30J6ES1
MG400J1US11
MG75J2YS40
MG400Q1US11
MG150J2YS40
mig25Q901
MG75J2YS45
|
PDF
|
MG75J2YS40
Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40
|
OCR Scan
|
E87989
MG100J1BS11
MG100J2YS1
MG100J2YS9
MG100J2YS40
MG100J2YS91
MG100J6ES1
MG100J6ES40
MG100J6ES45
MG100J6ES91
MG75J2YS40
MG200J2YS45
MG50J6ES40
MG150J2YS40
MG200J2YS40
20L6P44
MG150J2YS45
10L6P44
|
PDF
|
