MIG10J504H Search Results

MIG10J504H Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MIG10J504H		Mitsubishi	High Side Driver Power Supply		Original	PDF
MIG10J504H		Toshiba	Intelligent IGBT Module		Original	PDF

MIG10J504H Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MIG10J504H Contextual Info: MIG10J504H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J504H Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.	Original	MIG10J504H MIG10J504H	PDF
TOSHIBA IGBT DATA BOOK Abstract: MIG10J504H Contextual Info: MIG10J504H TOSHIBA Intelligent IGBT Module MIG10J504H Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •	Original	MIG10J504H TOSHIBA IGBT DATA BOOK MIG10J504H	PDF

Catalog Datasheet

Type

Document Tags

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MIG10J504H

Contextual Info: MIG10J504H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J504H Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.

Original

MIG10J504H MIG10J504H

PDF

TOSHIBA IGBT DATA BOOK

Abstract: MIG10J504H
Contextual Info: MIG10J504H TOSHIBA Intelligent IGBT Module MIG10J504H Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •

Original

MIG10J504H TOSHIBA IGBT DATA BOOK MIG10J504H

PDF