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    MICRON ELECTRONICS Search Results

    MICRON ELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    MICRON ELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    memory 9652

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net


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    UM 9515

    Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4
    Text: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation


    Original     		PDF 1-800-55-OMRON UM 9515 D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


    Original     		PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    IDT ZBT SRAM 1994

    Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
    Text: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular


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    Atmel oak dsp core

    Abstract: block diagram for barrel shifter PPAP "saturation arithmetic"
    Text: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – 1 mW/MIPS on 0.25-micron CMOS, 2.5V – 0.6 mW/MIPS on 0.20-micron CMOS, 1.8V High Performance: – 80 MIPS at 160 MHz (Typical) on 0.25-micron CMOS, 2.5V


    Original     		PDF 16-bit 25-micron 20-micron 0876F Atmel oak dsp core block diagram for barrel shifter PPAP "saturation arithmetic"

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    F611

    Abstract: L302 L611
    Text: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		PDF 35-micron) A11169EU1V0DS00 F611 L302 L611

    nec 2561 equivalent

    Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
    Text: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such


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    Pc 9571

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-5781 gcjones@micron.com Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RECORD RESULTS FOR FOURTH FISCAL QUARTER AND FISCAL YEAR 2000


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    0.25-um CMOS standard cell library inverter

    Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI
    Text: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided


    Original     		PDF CB55000 0.25-um CMOS standard cell library inverter CMOS GATE ARRAY stmicroelectronics OLIVETTI

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    NEC V30MX

    Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
    Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows


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    TF-680

    Abstract: L302 FV09 macros in embedded computing
    Text: DATA SHEET QB-8 / QB-8E 3.3 Volt , 0.44-Micron Gate-Array Description NEC’s 3.3V QB-8 family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring high speeds and low power dissipation. The QB-8 family offers not


    Original     		PDF 44-Micron TF-680 L302 FV09 macros in embedded computing

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


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    0.6 um cmos process

    Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


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    PALMDSPCORE

    Abstract: No abstract text available
    Text: Features • 16-bit Fixed-point Advanced Digital Signal Processing DSP Core • High Performance: • • • • • • • • • • • • • – 210 MHz (typical) on 0.18-micron CMOS, 1.8V – 3800 MOPS (3.8 GOPS) - Peak Performance on 0.18-micron CMOS


    Original     		PDF 16-bit 18-micron 03/01/0M PALMDSPCORE

    MIPS32 cache

    Abstract: 4KEC MIPS32 Mips MIPS32 application MIPS64 MIPS32 memory interface MIPS32 instruction set
    Text: FlexCore MIPS32 4KEc™ 32-bit RISC Processor Cores OVERVIEW FEATURES AND BENEFITS LSI Logic offers FlexCore MIPS32 4KEc processor cores available on both our Gflx™ 0.11 micron drawn and G12™ 0.18 micron (drawn) high performance process technologies, and fully configured to individual customer needs.


    Original     		PDF MIPS32TM 32-bit MIPS32 G12TM MIPS32 cache 4KEC Mips MIPS32 application MIPS64 MIPS32 memory interface MIPS32 instruction set

    netronics

    Abstract: D link adsl modem board Hitachi Stacked CSP Stanford plasma tv ic fujitsu lvds standard Plasma Display Panel PLASMA tv datasheet MB86060 MB86613
    Text: F A L L 2 0 0 0 Fujitsufocus The News on the Latest Semiconductor Technologies and Products From Fujitsu Microelectronics, Inc. Revolutionary 0.11 Micron Technology A breakthrough in ASIC solutions, Fujitsu’s new 0.11 micron process technology combines the lowest power, fastest transistor and most compact memory in the


    Original     		PDF 32-bit CORP-NL-20840-09/2000 netronics D link adsl modem board Hitachi Stacked CSP Stanford plasma tv ic fujitsu lvds standard Plasma Display Panel PLASMA tv datasheet MB86060 MB86613

    LPDDR2 PoP

    Abstract: LPDDR2 micron lpddr2 lpddr2 datasheet 216-ball LPDDR lpddr2 nand mcp Micron 512MB nand FLASH 136-Ball 168-ball LPDDR Micron NAND
    Text: A Perfect Match for Matchless Performance Micron Multichip Packages Form Factor, Speed, Power. Choose All That Apply. Form factor, speed, power—your mobile customers want all three. With Micron’s MCPs, you can respond to customers’ everincreasing demands without compromising leading-edge performance. Mix and match devices, configurations, and package


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    northbridge circuit pentium 4

    Abstract: intel i5 block diagram cache organization of intel 8086 430TX LM75 430tx intel INTEL 430TX INTEL confidential pentium temperature sensor interface with 8086 pb sram
    Text: INTEL PENTIUM PROCESSOR WITH MMX TECHNOLOGY MOBILE MODULE ON .25 MICRON n n n n n Intel Pentium® Processor with MMX™ Technology on .25 Micron running at 166/200/233/266 MHz n Second-level cache of pipeline burst SRAM  Burst read/write at 3-1-1-1; back-to-back


    Original     		PDF 430TX northbridge circuit pentium 4 intel i5 block diagram cache organization of intel 8086 LM75 430tx intel INTEL 430TX INTEL confidential pentium temperature sensor interface with 8086 pb sram

    d 65632

    Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
    Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products


    OCR Scan     		PDF

    uPD65801

    Abstract: uPD65800 UPD65804
    Text: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device


    OCR Scan     		PDF H27SSS uPD65801 uPD65800 UPD65804

    8251a usart interface from z80

    Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
    Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design System of NEC. The family allows


    OCR Scan     		PDF TMXP-200 L427525 8251a usart interface from z80 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX

    CMOS-6A

    Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
    Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC


    OCR Scan     		PDF IP-8090 CMOS-6A F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking