MICRON ELECTRONICS Search Results

MICRON ELECTRONICS Result Highlights (5)

Part	Manufacturer	Description
DLW21SH670HQ2L	Murata Manufacturing Co Ltd	CMC SMD 67ohm 320mA POWRTRN
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
DLW21SH121HQ2L	Murata Manufacturing Co Ltd	CMC SMD 120ohm 280mA POWRTRN
DLW21SH900HQ2L	Murata Manufacturing Co Ltd	CMC SMD 90ohm 280mA POWRTRN
ECASD61A157M010KA0	Murata Manufacturing Co Ltd	7343 (7343M)/150μF±20%/10Vdc/10mOhm

MICRON ELECTRONICS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
memory 9652 Contextual Info: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net	Original		PDF
UM 9515 Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4 Contextual Info: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation	Original	1-800-55-OMRON UM 9515 D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4	PDF
transistor f422 Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for	Original	50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe	PDF
IDT ZBT SRAM 1994 Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code Contextual Info: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular	Original		PDF
Atmel oak dsp core Abstract: block diagram for barrel shifter PPAP "saturation arithmetic" Contextual Info: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – 1 mW/MIPS on 0.25-micron CMOS, 2.5V – 0.6 mW/MIPS on 0.20-micron CMOS, 1.8V High Performance: – 80 MIPS at 160 MHz (Typical) on 0.25-micron CMOS, 2.5V	Original	16-bit 25-micron 20-micron 0876F Atmel oak dsp core block diagram for barrel shifter PPAP "saturation arithmetic"	PDF
bv0T Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high	Original	50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d	PDF
F611 Abstract: L302 L611 Contextual Info: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high	Original	35-micron) A11169EU1V0DS00 F611 L302 L611	PDF
nec 2561 equivalent Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05 Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such	Original		PDF
Pc 9571 Contextual Info: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-5781 gcjones@micron.com Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RECORD RESULTS FOR FOURTH FISCAL QUARTER AND FISCAL YEAR 2000	Original		PDF
0.25-um CMOS standard cell library inverter Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI Contextual Info: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided	Original	CB55000 0.25-um CMOS standard cell library inverter CMOS GATE ARRAY stmicroelectronics OLIVETTI	PDF
d 65632 Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207 Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products	OCR Scan		PDF
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original		PDF
NEC V30MX Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble Contextual Info: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows	Original		PDF
uPD65801 Abstract: uPD65800 UPD65804 Contextual Info: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device	OCR Scan	H27SSS uPD65801 uPD65800 UPD65804	PDF

TF-680 Abstract: L302 FV09 macros in embedded computing Contextual Info: DATA SHEET QB-8 / QB-8E 3.3 Volt , 0.44-Micron Gate-Array Description NEC’s 3.3V QB-8 family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring high speeds and low power dissipation. The QB-8 family offers not	Original	44-Micron TF-680 L302 FV09 macros in embedded computing	PDF
spice model Tunnel diode Abstract: dpsN TUNNEL DIODE spice model Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
D882D Abstract: rendition Contextual Info: INSIDE/out a quarterly newsletter for shareholders Contents August 1998 In the News Micron to Purchase Memory Business of Texas Instruments, Inc. in the news 1 did you know? 3 latest products 3 in the community On June 18, Micron Technology, Inc., NYSE: MU and Texas	Original		PDF
0.6 um cmos process Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
PALMDSPCORE Contextual Info: Features • 16-bit Fixed-point Advanced Digital Signal Processing DSP Core • High Performance: • • • • • • • • • • • • • – 210 MHz (typical) on 0.18-micron CMOS, 1.8V – 3800 MOPS (3.8 GOPS) - Peak Performance on 0.18-micron CMOS	Original	16-bit 18-micron 03/01/0M PALMDSPCORE	PDF
MIPS32 cache Abstract: 4KEC MIPS32 Mips MIPS32 application MIPS64 MIPS32 memory interface MIPS32 instruction set Contextual Info: FlexCore MIPS32 4KEc™ 32-bit RISC Processor Cores OVERVIEW FEATURES AND BENEFITS LSI Logic offers FlexCore MIPS32 4KEc processor cores available on both our Gflx™ 0.11 micron drawn and G12™ 0.18 micron (drawn) high performance process technologies, and fully configured to individual customer needs.	Original	MIPS32TM 32-bit MIPS32 G12TM MIPS32 cache 4KEC Mips MIPS32 application MIPS64 MIPS32 memory interface MIPS32 instruction set	PDF
netronics Abstract: D link adsl modem board Hitachi Stacked CSP Stanford plasma tv ic fujitsu lvds standard Plasma Display Panel PLASMA tv datasheet MB86060 MB86613 Contextual Info: F A L L 2 0 0 0 Fujitsufocus The News on the Latest Semiconductor Technologies and Products From Fujitsu Microelectronics, Inc. Revolutionary 0.11 Micron Technology A breakthrough in ASIC solutions, Fujitsu’s new 0.11 micron process technology combines the lowest power, fastest transistor and most compact memory in the	Original	32-bit CORP-NL-20840-09/2000 netronics D link adsl modem board Hitachi Stacked CSP Stanford plasma tv ic fujitsu lvds standard Plasma Display Panel PLASMA tv datasheet MB86060 MB86613	PDF
LPDDR2 PoP Abstract: LPDDR2 micron lpddr2 lpddr2 datasheet 216-ball LPDDR lpddr2 nand mcp Micron 512MB nand FLASH 136-Ball 168-ball LPDDR Micron NAND Contextual Info: A Perfect Match for Matchless Performance Micron Multichip Packages Form Factor, Speed, Power. Choose All That Apply. Form factor, speed, power—your mobile customers want all three. With Micron’s MCPs, you can respond to customers’ everincreasing demands without compromising leading-edge performance. Mix and match devices, configurations, and package	Original		PDF
northbridge circuit pentium 4 Abstract: intel i5 block diagram cache organization of intel 8086 430TX LM75 430tx intel INTEL 430TX INTEL confidential pentium temperature sensor interface with 8086 pb sram Contextual Info: INTEL PENTIUM PROCESSOR WITH MMX TECHNOLOGY MOBILE MODULE ON .25 MICRON n n n n n Intel Pentium® Processor with MMX™ Technology on .25 Micron running at 166/200/233/266 MHz n Second-level cache of pipeline burst SRAM  Burst read/write at 3-1-1-1; back-to-back	Original	430TX northbridge circuit pentium 4 intel i5 block diagram cache organization of intel 8086 LM75 430tx intel INTEL 430TX INTEL confidential pentium temperature sensor interface with 8086 pb sram	PDF
CMOS-6A Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking Contextual Info: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC	OCR Scan	IP-8090 CMOS-6A F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking	PDF

MICRON ELECTRONICS Search Results

MICRON ELECTRONICS Result Highlights (5)

MICRON ELECTRONICS Datasheets Context Search

memory 9652

UM 9515

transistor f422

IDT ZBT SRAM 1994

Atmel oak dsp core

bv0T

F611

nec 2561 equivalent

Pc 9571

0.25-um CMOS standard cell library inverter

d 65632

CMOS

NEC V30MX

uPD65801

TF-680

spice model Tunnel diode

D882D

0.6 um cmos process

PALMDSPCORE

MIPS32 cache

netronics

LPDDR2 PoP

northbridge circuit pentium 4

CMOS-6A