STANFORD Search Results

Xa2 TRANSISTOR

Abstract: SXH-189 AN023
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

Contextual Info: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency

transistor 65 C 3549

Abstract: linear amplifier P1dB 36dBm
Contextual Info: Stanford Microdevices Product Description SNA-676 Stanford Microdevices' SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6,5

Contextual Info: SMM-808 2.0-7.0GHZ G aAs M M IC Amplifier Preliminary Data Features • 12dB Gain and 17dBm P1dB - Excellent VSWR: 1.5:1 Typical - 5dB Noise Figure - Operates From Single 1SV Supply - Surface-Mountable Package i 'il i I— H i I I l! * Description Stanford Microdevices' SM M -8 08 is a gallium

p1d AM

Abstract: RW mmic
Contextual Info: SMM-180 1.4-2.0 GHz, 1.5 Watt G aA s M M IC Amplifier Aprfl, 1995 Features - 25dB Gain with +/- 0.5dB Flatness - +32dBm Output Power at P1dB - 20% Power Added Efficiency - +41 dBm Output TOIP - CopperfTungsten Package Description Stanford Microdevices' SM M -180 is a high performance

sc 8256

Abstract: SNA586 SNA-586
Contextual Info: IS Stanford Microdevices Product Description Stanford Microdevices’ SNA-586 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V. External DC decoupling capacitors determine low frequency

SNA-486

Abstract: SNA-487
Contextual Info: Stanford Microdevices Product Description SNA-487 Stanford Microdevices’ SN A-487 is a G a A s monolithic broadband amplifier M M IC housed in a low-cost drop-in plastic package. This amplifier provides 13dB of gain when biased at 80mA and 5.0V, DC-8 GHz, Cascadable

SNA-676

Abstract: 120C 155C SNA-600 SNA-676-TR1 SNA-676-TR2 SNA-676-TR3
Contextual Info: Product Description SNA-676 Stanford Microdevices’ SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6.5

SNA-576

Abstract: MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3
Contextual Info: Product Description SNA-576 Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. DC-3 GHz, Cascadable GaAs MMIC Amplifier

Contextual Info: Product Description SXT Series Stanford Microdevices’ SXT Series are high performance GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic packages. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and

XA2 MMIC

Abstract: Xa2 TRANSISTOR
Contextual Info: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

Contextual Info: Preliminary Product Description SGA-6289 Stanford Microdevices’ SGA-6289 is a high performance cascadeable 50-ohm amplifier designed for operation voltages as low as 4.0V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Preliminary Product Description NGA-486 Stanford Microdevices’ NGA-486 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for

Contextual Info: Preliminary Product Description SGA-3286 Stanford Microdevices’ SGA-3286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SLN-186 Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz.

Contextual Info: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

transistor Bc 287

Abstract: sga-9289
Contextual Info: Preliminary Preliminary Product Description SGA-9289 Stanford Microdevices’ SGA-9289 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device uses the latest Silicon

Contextual Info: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

transistor 20 dB 2400 mhz

Contextual Info: Preliminary Preliminary Product Description SXT-289 Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

SGA-6289

Contextual Info: Preliminary Product Description SGA-6289 Stanford Microdevices’ SGA-6289 is a high performance cascadeable 50-ohm amplifier designed for operation voltages as low as 4.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Stanford amplifier

Contextual Info: Preliminary Product Description SGA-4286 Stanford Microdevices’ SGA-4286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

RF TRANSISTOR 1.5 GHZ A64

Abstract: MMIC A64 marking A64 marking amplifier
Contextual Info: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

Contextual Info: Product Description SCA-15 Stanford Microdevices’ SCA-15 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between