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    MGF495 Price and Stock

    Mitsubishi Electric MGF4953A-65

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    Bristol Electronics MGF4953A-65 147
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    Mitsubishi Electric MGF4953A

    SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics MGF4953A 8,834
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    • 100 $1.044
    • 1000 $0.848
    • 10000 $0.848
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    MGF495 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF4951 Mitsubishi SUPER LOW NOISE InGaAs HEMT Scan PDF
    MGF4951A Mitsubishi TRANS JFET 2V 60MA 3LEAD-LESS CERAMIC T/R Original PDF
    MGF4951A Mitsubishi Super Low Noise InGaAs HEMT Scan PDF
    MGF4952A Mitsubishi TRANS JFET 2V 60MA 3LEAD-LESS CERAMIC T/R Original PDF
    MGF4952A Mitsubishi Super Low Noise InGaAs HEMT Scan PDF
    MGF4953A Mitsubishi TRANS JFET N-CH 2V 60MA 3CERAMIC PACKAGE T/R Original PDF
    MGF4953A Mitsubishi SUPER LOW NOISE INGAAS Scan PDF
    MGF4953B Mitsubishi SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Original PDF
    MGF4954A Mitsubishi TRANS JFET N-CH 2V 60MA 3CERAMIC PACKAGE T/R Original PDF
    MGF4954A Mitsubishi SUPER LOW NOISE INGAAS Scan PDF
    MGF4955A Mitsubishi super-low noise HEMT (High Electron Mobility Transistor) Original PDF
    MGF4957A Mitsubishi super-low noise HEMT (High Electron Mobility Transistor) Original PDF

    MGF495 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SENJU 221CM5

    Abstract: Senju 2062-221CM5-32-11 senju printing speed Senju oz-2062 PC10 senju-metal panasert 2535M
    Text: Technical Note 1-a Recommended Foot pattern for MGF495*A Point Point 1: 1: The The distance distance between between approaching approaching foot foot patterns patterns isis keeping 0.3 mm or more. keeping 0.3 mm or more. → (→ Prevent Prevent short short circuit


    Original     		PDF MGF495 NM-PC10 2062-221CM5-32-11 QL-1105E SENJU 221CM5 Senju 2062-221CM5-32-11 senju printing speed Senju oz-2062 PC10 senju-metal panasert 2535M

    HEMT marking K

    Abstract: MGF4953A
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel HEMT marking K

    MGF4951A

    Abstract: MGF4952A
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A MGF4951A MGF4952A

    Untitled

    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz

    MGF4953A

    Abstract: No abstract text available
    Text: Feb./2000 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Gs NFmin. Associated gain VDS=2V, Minimum noise figure ID=10mA MGF4953A f=12GHz MGF4954A Fig. 1 Top 12.0 - Side 13.5 0.45 0.65


    Original     		PDF MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A

    InGaAs HEMT mitsubishi

    Abstract: transistor P7d MGF4957A Fet P7d
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d

    mgf4953a

    Abstract: mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A mgf4953a mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters

    Untitled

    Abstract: No abstract text available
    Text: Ｊｕｎｅ/2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.


    Original     		PDF MGF4953B MGF4953B 20GHz 3000pcs June/2006

    Untitled

    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4955A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4955A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF June/2004 MGF4955A MGF4955A 12GHz 3000pcs

    MGF4953A

    Abstract: mgf4953 s2v 92 S2V40
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A 12GHz MGF4953A mgf4953 s2v 92 S2V40

    TRANSISTOR C 4460

    Abstract: InGaAs HEMT mitsubishi MGF4953B MGF495
    Text: Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953B MGF4953B 20GHz 3000pcs TRANSISTOR C 4460 InGaAs HEMT mitsubishi MGF495

    low noise hemt transistor

    Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A ORD148 50-ohm low noise hemt transistor InGaAs HEMT mitsubishi MGF4951A MGF4952A

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing


    Original     		PDF MGF4953B MGF4953B 20GHz 000pcs/reel MGF4953B-01) MGF4953B-70al

    MGF4953B

    Abstract: MGF4953B-70
    Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing


    Original     		PDF MGF4953B MGF4953B 20GHz 000pcs/reel 000pcs/reel MGF4953B-01) MGF4953B-70) MGF4953B-70

    mitsubishi ordering information

    Abstract: MGF4955A InGaAs HEMT mitsubishi transistor P7d mitsubishi package
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4955A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4955A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF June/2004 MGF4955A MGF4955A 12GHz 3000pcs mitsubishi ordering information InGaAs HEMT mitsubishi transistor P7d mitsubishi package

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    MGF4951A

    Abstract: Low Noise HEMT 12g transistor
    Text: Jan./1999 [ M ITS U B IS H I S E M IC O N D U C T O R Preliminary <G aAs FET> MGF4951A S U P E R LO W N O IS E InGaAs H E M T Leadless Ceramic Package) DESCRIPTION Outline Drawing The M G F4951A super-low-noise HEM T (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF MGF4951A MGF4951A 12GHz mgf495ia Low Noise HEMT 12g transistor

    mgf4953a

    Abstract: MGF4954A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MG F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF F4953A/MG F4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A MGF4953A June/2000 MGF4954A

    LOW HEMT

    Abstract: Hemt transistor
    Text: Jan./1999 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF MGF4951A MGF4951A 12GHz 12GHz lD-10mA LOW HEMT Hemt transistor

    FET 748

    Abstract: MGF4951A MGF4951 MGF4952A 4952A ta 1223
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Outline Drawing DESCRIPTION The MGF495*A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    OCR Scan     		PDF MGF4951A/4952A MGF495 12GHz MGF4951A MGF4952A 12GHz MGF4951A FET 748 MGF4951 MGF4952A 4952A ta 1223

    low noise x band hemt transistor

    Abstract: Gan hemt transistor x band MGF4953A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A _ SUPER LOW NOISE InGaAs HEMT Leodess Ceramic Package D ES C R IP TIO N Outline Drawing The MGF4953A/MGF4954A super low noise HEMT (High Electron M oM ty Transistor) is designed for use in C to K band


    OCR Scan     		PDF MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGr49S4A May/2000 low noise x band hemt transistor Gan hemt transistor x band MGF4953A