MG600J1US51 Search Results

Contextual Info: MG600J1US51 TOSHIBA M G 6 0 0 J 1 US51 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ Max. (I0 = 6OOA)

Contextual Info: TOSHIBA MG600J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : tf= 0.30^s Max. (Ic = 600A)

5D03

Contextual Info: TOSHIBA MG600J1US51 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT M G 6 0 0 J 1 US51 HIGH PO W E R SWITCHING APPLICATIONS. M OTO R CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • H ig h In p u t Im pedance • Enhancem ent-Mode • H ig h Speed : tf= 0.30/i<s M ax. ( I c = 600A)

MG600J1US51

Abstract: 16a06
Contextual Info: TOSHIBA MG600J1US51 M G 6 0 0 J 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : tf=0.30;i*s Max. (Iç; = 600A)

2-109E

Contextual Info: MG600J1US51 TOSHIBA M G 6 0 0 J 1 US51 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ Max. (I0 = 6OOA)

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a