Untitled
Abstract: No abstract text available
Text: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.
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GT15J102
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Untitled
Abstract: No abstract text available
Text: GT15J102 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 10±0.3 0 3 2 ± 0 2 2.7 ±0.2 . High Input Impedance . High Speed : tf=0.35ys Max. . Low Saturation Voltage : VcE(sat)=4•0V(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta=25°C)
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GT15J102
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Untitled
Abstract: No abstract text available
Text: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 1 5 J 1 SILICON N -CH ANN EL IGBT 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.
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GT15J102
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Untitled
Abstract: No abstract text available
Text: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATINS • • • • 10 ± 0.3 High Input Impedance High Speed : tf=0.35;i*s Max. Low Saturation Voltage : V^g (sat) “ 4.0V (Max.)
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GT15J102
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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GT15J102
Abstract: 2-10R1C J102 RL-20 V100 Vgg-15 5-J04
Text: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATINS • • • • 10 ± 0.3 High Input Impedance High Speed : tf=0.35;i*s Max. Low Saturation Voltage : V^g (sat) “ 4.0V (Max.)
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GT15J102
GT15J102
2-10R1C
J102
RL-20
V100
Vgg-15
5-J04
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MN3005
Abstract: No abstract text available
Text: GT15J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f 'W i • T ■ iM r vm ■m SILICON N-CHANNEL IGBT w ? Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 + 0.3 Collector Current Collector Power Dissipation Tc = 25°C
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GT15J102
2-10R1C
MN3005
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t15J102
Abstract: 2-10R1C GT15J102 V100
Text: TOSHIBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 02 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 . 3 I— • • • • High Input Impedance High Speed : tf=0.35/*s Max.
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GT15J102
T15J102
t15J102
2-10R1C
GT15J102
V100
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT15J102 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL I6BT G T 1 5 J 1 02 HIGH PO W ER SWITCHING APPLICATIONS U n it in m m M O TO R CONTROL APPLICATIONS 10 tQ 3 jS3.2 ±0.2 2.7±0 2 of • H igh In p u t Im pedance • H ig h Speed
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GT15J102
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nsk dc motor
Abstract: No abstract text available
Text: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS 10± 0.3 MOTOR CONTROL APPLICATINS • • • • ¿ 3-2 ± 0.2 2.710.2 High Input Impedance High Speed : tf=0.35;i*s Max.
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GT15J102
nsk dc motor
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Untitled
Abstract: No abstract text available
Text: SILICON N CHANNEL IGBT GT15J102 H IG H P O W E R S W I T C H I N G A P P L I C A T I O N S . Unit MOTOR CONTROL APPLICATIONS. 1 0 ± 0.3 . High Input Impedance 0 3 .2 ± O .2 in mm 2.7 ± 0.2 m . High Speed : t f = 0 . 3 5 J s H a x .) . Low Saturation Voltage
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GT15J102
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Untitled
Abstract: No abstract text available
Text: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)
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35iJs
Tc-25
Ta-25
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106DAA1
/SC-70
YTF612
2SK2381
YTF841
2SK2387
YTF442
2SK2149
YTF613
TOSHIBA MG150N2YS40
mg75n2ys40
MG15N6ES42
mg150n2ys40
2SK150A
toshiba s2530a
2sk270a
MG8N6ES42
MG15G1AL2
mg75j2ys40
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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GT80J101
Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412
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GT8J101
GT8J102
GT8Q101
GT15J101
GT15J102
GT8Q102
MG300J2YS50
MG400J1US51
MG400J2YS50
MG800J1US51
GT80J101
MG75Q2YS40
MG360V1US41
MG100Q2YS42
MG75J6ES50
GT60M301
MG15J6ES40
MG300Q2YS40
MG150Q2YS40
mg100j6es5
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
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mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
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02BZ2
1S2092
1SZ5759
02CZ2
1S2094
2N3055
02CZ5
1S2095A
2N3713
02Z24A1M
mg75n2ys40
MG15N6ES42
2SK150A
2sk270a
MG150n2ys40
MG8N6ES42
MG15G1AL2
mg75j2ys40
MG30G1BL2
S2530A
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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