MG15G6 Search Results

mg15g6em1

Abstract: equivalent MG15G6EM1
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in nan MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source OS Resistance

MG15G6EL1

Contextual Info: MG15G6EL1 QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in 1 Package. . With Built-in Free Wheeling Diodes.

MG15G6EL2

Contextual Info: MG15G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package . With Built-in Free Wheeling Diode. . High DC Current Gain

MG15G6EM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

MG15G1AM1

Abstract: MG15G4GM1 TOSHIBA MG15G4GM1 MG15G6EM1 equivalent MG15G6EM1 LSE 405 MG15
Contextual Info: TOSHIBA -CDISCRET E/OPTO} [ TO 9097250 TOSHIBA DISCRETE/OPTO ¿/oìiììlit 7 DE I T D T aSD O D I L ^ H 90D 1 6 3 9 4 T~39-2y MG15G1AM1 M G 1 5 G 4 G M 1 (450V /15A ) MG15G6EM1 SEMICONDUCTOR TECHNICAL DAÎA EQUIVALENT CIRCUIT OUTLINE T, < D . O in o s:

MG15G4GL1

Abstract: toshiba mg15g4gl1 MG15G6EL1 MG15 npn DARLINGTON 15A 248A1 mg15g4
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "TD <DISCRETE/OPTO> V ' r - ‘2 > 3 - ‘3 £ ' 90D 16203 TOSHIBA GTR MODULE SEMICONDUCTOR ¿Tasiiiht DÊjH T O T T E S D O O l b H D E 3 J - MG15G4GL1 MG15G6EL1 TECHNICAL DATA SILIC O N NPN T R IP L E DIFFUSED TYPE

MG15G6EL1

Abstract: MG15G6
Contextual Info: GTR MOOULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G6EL1 HIGH POWER SWIT CH I NG APPLICATIONS. M OT O R C O NTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isolated from Case. . 6 D a r l i n g t o n T r a n s i s t o r s are Built-ii 1 Package. . W i t h Buil t - i n

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

30U6P42

Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
Contextual Info: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

Contextual Info: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

6BM8

Abstract: equivalent MG15G6EM1 st zo 607 2-48A3B
Contextual Info: - 206 - MOS w m m F E T £ 4 ff l/6 B M 8 EM-1 GM-1 + o—- f O 7 V —* - f n < - f f l 7 ? 7 .\-y firftz£ Z tm |- h i k SU GV ; h , i 3 J |1* *1 QU o 4 h i 1— 1 A\ 1*1 JVO-11 -OU 1 OX o i 1 V dss V GSS & U £ JI

2sk1029

Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
Contextual Info: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1

MG30G2CL3

Abstract: MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1
Contextual Info: 9097250 TOSHIBA DISCRETE/O PTO TOSHIBA {DISCRETE/OPTO} TO 9 0D 16488 D T- T Ë j | TOT VE h U UUJihMöö Jb p GTR Modules Bipolar Darlington n o te : W A STA G E DARLINGTON, CK):3-STAGE DARLINGTON $:UNDER DEVELOPMENT * :V c e x <s u s i #:UL RECOGNIZED