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Catalog Datasheet	MFG & Type	PDF	Document Tags
GRM21BB31 Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2 Text: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	PDF	NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ WS260 HS350 GRM21BB31 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 4.7n2
74n7 Abstract: R1766T Text: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	PDF	NE5550234 R09DS0039EJ0300 NE5550234 NE5550234-AZ 74n7 R1766T
Panasonic R1766 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	PDF	NE5550234 R09DS0039EJ0300 NE5550234-AZ HS350 R09DS0039EJ0300 NE5550234 Panasonic R1766
74n7 Abstract: L1-L10 D2074 ne5550 Text: Data Sheet NE5550234 R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	PDF	NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-AZ 74n7 L1-L10 D2074 ne5550