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Fischer Elektronik GmbH & Co KG SL-15-SMD-207-4-G 0.635 MM FOR INTERCONNECTION
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SL-15-SMD-207-4-G	Bulk			10	1 - 10 $0.94 100 $0.94 1000 $0.94 10000 $0.94	Buy Now
Fischer Elektronik GmbH & Co KG SL-15-SMD-207-4-Z 0.635 MM FOR INTERCONNECTION
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SL-15-SMD-207-4-Z	Bulk			10	1 - 10 $0.6 100 $0.6 1000 $0.6 10000 $0.6	Buy Now
Mercury Electronic Ind Co Ltd 3QHM53D2.0-74.000 XTAL OSC SSXO 74.0000MHZ CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3QHM53D2.0-74.000				5	1 - 10 $17.97 100 $7.7 1000 $6.45 10000 $6.45	Buy Now
Fischer Elektronik GmbH & Co KG SL-16-SMD-207-44-Z 0.635 MM FOR INTERCONNECTION
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SL-16-SMD-207-44-Z	Bulk			10	1 - 10 $6.34 100 $6.34 1000 $6.34 10000 $6.34	Buy Now
Fischer Elektronik GmbH & Co KG SL-16-SMD-207-42-G 0.635 MM FOR INTERCONNECTION
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SL-16-SMD-207-42-G	Bulk			10	1 - 10 $9.64 100 $9.64 1000 $9.64 10000 $9.64	Buy Now

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D2074 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GRM21BB31 Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2 Text: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	PDF	NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ WS260 HS350 GRM21BB31 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 4.7n2
LQW18AN4R7NG00 Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01 Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0	Original	PDF	NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original	PDF
74n7 Abstract: R1766T Text: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	PDF	NE5550234 R09DS0039EJ0300 NE5550234 NE5550234-AZ 74n7 R1766T
R1766 Abstract: No abstract text available Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550779A R09DS0040EJ0300 NE5550779A NE5550779A-A R1766
LINDNER fuses Abstract: e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c Text: Fuses – Fusegear Semiconductor Protection Fuses • Protistor Mapping 70 - 71 • American Round Fuses - Form 101 range 72 - 81 • Other American Round Fuses 82 • Ferrule-style Protistor fuses 83 - 87 • Protistor DIN standard fuses sizes 000-00 88 - 89	Original	PDF	A218707K Y211023K F215124K P219226K Z211024K MSD823I MSD10251I MSD831I MSD1031I MSD1038I LINDNER fuses e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c
Panasonic R1766 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	PDF	NE5550234 R09DS0039EJ0300 NE5550234-AZ HS350 R09DS0039EJ0300 NE5550234 Panasonic R1766
74n7 Abstract: L1-L10 D2074 ne5550 Text: Data Sheet NE5550234 R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	PDF	NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-AZ 74n7 L1-L10 D2074 ne5550
transistor D2058 Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010 Text: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY.  AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER  Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do	Original	PDF	C2000 transistor D2058 K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010
ne5550 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550
NE5550779A-T1 Abstract: sma 906 Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550779A R09DS0040EJ0200 NE5550779A NE5550779A-A NE5550779A-T1 sma 906