MCH185 Search Results

Contextual Info: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as

sc 6038

Abstract: 4511 bd CGB7006-SC-0G0T CGB7006-SP-0G00 CGB7006-SP-0G0T MCH185A101JK PB-CGB7006-SC-0000 PB-CGB7006-SP-0000 CGB7006-BD CGB7006-SC
Contextual Info: DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7006-SC -BD Features Functional Block Diagram (SOT-89) 33.5 dBm Output IP3 @ 850 MHz 4.1 dB Noise Figure @ 850 MHz 15.2 dB Gain @ 850 MHz 18.0 dBm P1dB @ 850 MHz

CGB7016-BD

Abstract: CGB7016-SC CGB7016-SC-0G00 CGB7016-SC-0G0T CGB7016-SP-0G00 CGB7016-SP-0G0T MCH185A101JK PB-CGB7016-SC-0000 PB-CGB7016-SP-0000
Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7016-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz

1900mhz

Abstract: CL10B103KBNC LL1608-FS27NJ SGL-0263
Contextual Info: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

SOF-26

Abstract: SZP-3026Z
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

MCH185A221JK

Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
Contextual Info: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits

NE552R479A

Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.

C1608COG1H222J

Abstract: MMSZ4678T1 SD101AWS SP7655 SP7655EB SP7655ER SPX5205 6812F CL10B473KB8NNNC SPX5205M5-5
Contextual Info: SP7655 Evaluation Board Manual ƒ Easy Evaluation for the SP7655ER 24V Input, 0 to 8A Output Synchronous Buck Converter ƒ Built in Low Rds on Power FETs ƒ UVLO Detects Both VCC and VIN ƒ High Integrated Design, Minimal Components ƒ High Efficiency: 85%

BJT with i-v characteristics

Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
Contextual Info: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available

MCR03EZHJ

Abstract: 5045-03a Fujitsu VCO MB1500EB00A MB1500EB20B MB15F72UV MB15F73UV MB15F74UV TP10 MCH185C102K
Contextual Info: Fujitsu PLL Frequency Synthesizer ICs MB1500EB20B Evaluation Board Manual -MB1500EB20BPLL Frequency Synthesizer IC MB15F7xUV MB15F3xUV For BCC Package -1- 2003.Feb.Rev0.1 Fujitsu PLL Frequency Synthesizer ICs MB1500EB20B Evaluation Board Manual 2003.Feb.Rev0.1

mch215f104zp

Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz

spf-5122

Abstract: SPF-5122Z SPF5122Z rfmd 51z wimax receiver 3.5 GHz SPF51Z TAJB104KLRH spf 51z dc to 3 ghz lna application circuits LL1608-FSR15J
Contextual Info: SPF-5122Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF-5122Z Preliminary 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER RoHS Compliant and Pb-Free Product Product Description Features The SPF-5122Z is a high performance pHEMT MMIC LNA designed for

spf-5043

Abstract: SPF5043Z SPF 5043Z SPF5043 spf-5043z amplifier 900mhz
Contextual Info: Preliminary SPF-5043Z 500-2500 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5043Z is a fully matched ultra-low noise, high linearity MMIC LNA designed for 500-2500 MHz operation. It delivers 1.0dB noise figure and 34dBm OIP3 at 1900 MHz 5V,45mA . It is housed in an industry standard

ML200C

Abstract: 7-27GHz ER39 SPA1526Z bc 303 transistor
Contextual Info: Advanced Information SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with

SPF-5122Z

Abstract: SPF5122 spf 51z
Contextual Info: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

cgb7

Abstract: SOT 86
Contextual Info: DC-6.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier March 2007 - Rev 20-Mar-07 CGB7001-SP Functional Block Diagram SOT-86 Features Low Operating Voltage: 5V 27.8 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 20.2 dB Gain @ 850 MHz 14.0 dBm P1dB @ 850 MHz

capacitor 361j

Abstract: capacitor 152j R265A 48 H diode marking code 102j transistor 010C MCH184FN225Z MCH185CN682K marking 330j 020C
Contextual Info: MCH18 Ceramic capacitors Multi-layer ceramic chip capacitors MCH18 1608 (0603 size, chip capacitor) zFeatures 1) Miniture, light weight 2) Achieved high capacitance by thin and multi layer technology 3) Lead-free plating terminal 4) No polarity zQuick Reference

spa1526

Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,

4069 NOT GATE IC

Abstract: NEC LDMOS
Contextual Info: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz

GL 7812

Abstract: ATC 2603 LDMOS NEC
Contextual Info: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:

MCH185A101JK

Abstract: LL1608-FS56NJ SGL-0622Z TAJB105KLRH
Contextual Info: Preliminary SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.1 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5

4202 BD TRANSISTOR

Abstract: lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853
Contextual Info: CDQ0303-QS 500 MHz to 6000 MHz Dual, Ultra Low-Noise, High IP3 Amplifier Advanced Product Information May 2005 V1.0 1 of 18 Features ❏ Matched Pair of Transistors for Optimum Ballanced Amplifier Design ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT)

Contextual Info: CGB7011-SC -BD PNQ@š•@VNP@gh¡ i”g„p@hbtL@mmic@•˜@p„†‘„Šˆ‡L m„š†‹ˆ‡@g„Œ”@b’•†‘@a“–’Œ‰Œˆ˜ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•› š•”L@tˆŸ„™@WWPYY