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    ROHM Semiconductor MCH182CN104KK

    CAP CER 0.1UF 25V X7R 0603
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    MCH182CN104KK 2,848
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    MCH182CN104 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCH182CN104CC ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104CK ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104CL ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104DC ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104DK ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104DL ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104JC ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104JK ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104JL ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104KC ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104KK ROHM Ceramic Capacitors, Capacitors, CAP CERM .1UF 10% 25V X7R 0603 Original PDF
    MCH182CN104KK ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104KL ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104ZC ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104ZK ROHM Multi-layer ceramic chip capacitors Original PDF
    MCH182CN104ZL ROHM Multi-layer ceramic chip capacitors Original PDF

    MCH182CN104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOF-26

    Abstract: SZP-3026Z
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1 SOF-26

    MCH185A221JK

    Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
    Text: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits


    Original     		PDF AN-079 SGA-8543Z dev2450 2440MHz EAN-104851 MCH185A221JK MCH185A390JK ML200C PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21

    capacitor 361j

    Abstract: capacitor 152j R265A 48 H diode marking code 102j transistor 010C MCH184FN225Z MCH185CN682K marking 330j 020C
    Text: MCH18 Ceramic capacitors Multi-layer ceramic chip capacitors MCH18 1608 (0603 size, chip capacitor) zFeatures 1) Miniture, light weight 2) Achieved high capacitance by thin and multi layer technology 3) Lead-free plating terminal 4) No polarity zQuick Reference


    Original     		PDF MCH18 capacitor 361j capacitor 152j R265A 48 H diode marking code 102j transistor 010C MCH184FN225Z MCH185CN682K marking 330j 020C

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL NOTE Power Management Switch IC Series for PCs and Digital Consumer Product Power Switch for TM ExpressCard BD4155FV ●Description TM BD4155FV is a power management switch IC for the next generation PC card ExpressCard developed by the PCMCIA.


    Original     		PDF BD4155FV BD4155FV EC100052"

    MCH185C332K

    Abstract: MCH155F103Z mch184cn224k MCH153F104Z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		PDF MCH15 MCH18 MCH185C332K MCH155F103Z mch184cn224k MCH153F104Z

    BD9883

    Abstract: BD9883AF BD9883FV BD9883F 217T146 GRM42A5C3F220J DAN217T146
    Text: TECHNICAL NOTE Inverter Control ICs for Large LCD Backlight Wire Wound Electronic Transformer Inverter Control IC for LCD Panel 10" to 15" BD9883AF/FV zDescription These inverter ICs feature a built-in half-bridge control circuit and can be controlled with a single n-type MOSFET. They are


    Original     		PDF BD9883AF/FV BD9883AF/FV BD9883 BD9883AF BD9883FV BD9883F 217T146 GRM42A5C3F220J DAN217T146

    SZA-2044

    Abstract: SZA-3044 SZA-3044Z SZA-5044
    Text: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5 V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-3044 SZA3044 SZA3044Z SZA3044ZPCK-EVB1 DS100622 SZA-2044 SZA-3044Z SZA-5044

    MCH185A3R9DK

    Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
    Text: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-3166Z SZM-3166Z SZM-3166Z" SZM-3166Z-EVB1 EDS-105462 MCH185A3R9DK SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z

    SOF-26

    Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 SOF-26 SZP-5026 5.7Ghz low noise amplifier 600S4R7

    SPF-3043

    Abstract: SPF-3143 SPF 188 AN066 3143 LL1608-FS3N9S LL1608-FS4N7S MCH182CN104KK MCH185A150JK ML200C
    Text: DESIGN APPLICATION NOTE - AN-066 SPF-3143 Amplifier Application Circuits Abstract This application note is intended to provide a reference point for an amplifier circuit design using Sirenza Microdevices’ SPF-3143 at 1960 MHz, in both dualbiased and self-biased configurations.


    Original     		PDF AN-066 SPF-3143 MCH185A150JK MCH182CN104KK MCH185A8R2DK LL1608-FS5N6S SPF-3043 SPF 188 AN066 3143 LL1608-FS3N9S LL1608-FS4N7S MCH182CN104KK MCH185A150JK ML200C

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g LL1608FH4N7J DS110620 LL1608FH10J SZM2066ZSQ SZM2066ZSR

    Untitled

    Abstract: No abstract text available
    Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA3026 54Mb/s 27dBm 513mA 26dBm 570mA DS120110

    600S4R7

    Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SZP-5026Z SOF-26 DS110620 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 600S4R7 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 600S5R6 600S4R7cw250

    MCH18

    Abstract: ZO13 0805HQ-5N6XJBB
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 MCH18 ZO13 0805HQ-5N6XJBB

    MCH182CN104

    Abstract: No abstract text available
    Text: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-3044 DS110620 SZA3044ZSQ SZA3044ZSR SZA3044Z SZA3044ZPCK-EVB1 MCH182CN104

    dk39

    Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z bands21 DS110620 SZM2166ZSQ SZM2166ZSR SZM2166Z SZM2166ZPCK-EVB1 dk39 SZM-2166 szm2166 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic

    SZP-5026-HWD

    Abstract: No abstract text available
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SZP-5026Z SOF-26 DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 SZP-5026-HWD

    Untitled

    Abstract: No abstract text available
    Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250

    Untitled

    Abstract: No abstract text available
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  P1dB =33.5dBm at 5V, 2.4GHz  802.11g 54Mb/s Class AB Performance


    Original     		PDF SZP-2026Z SOF-26 SZP-2026Z 54Mb/s 26dBm 27dBm SZP-2026Zâ DS110620

    Untitled

    Abstract: No abstract text available
    Text: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, and LX1672-06CLQ are protected by U.S. Patents: 6,285,571 & 6,292,378 TM Copyright 2002 Revision 1.0, 2/24/2006


    Original     		PDF LX1671/LX1672 LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, LX1672-06CLQ LX1671

    mch185cn153k

    Abstract: MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH18 MCH185A150J MCH153F104Z MCH185A470J f103z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		PDF MCH15 MCH18 12please 4316B mch185cn153k MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH185A150J MCH153F104Z MCH185A470J f103z

    1R1C

    Abstract: MCH185CN152K 331J COG 100
    Text: 1608 0603 Size chip capacitors : MCH18 ● ● ● ● Miniture, light weight Achieved high capacitance by thin and multi layer technology Lead-free plating terminal No polarity Quick Reference The design and specifications are subject to change without prior notice. Before ordering or using,


    Original     		PDF MCH18 180mm 330mm RCR-2333 1R1C MCH185CN152K 331J COG 100

    600S100JW250

    Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
    Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 600S100JW250 cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18