MC 139 TRANSISTOR Search Results

M37150MB-XXXFP

Abstract: BC25 SFR1 4000 M37150M8-XXXFP M37150MA M37150EFFP M37150M6-XXXFP M37150MA-XXXFP M37150MC-XXXFP M37150MF-XXXFP
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M37150MB-XXXFP

Contextual Info: M37150M6/M8/MA/MC/MF-XXXFP, M37150EFFP SNGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER 1. DESCRIPTION The M37150M6/M8/MA/MC/MF-XXXFP and M37150EFFP are single-chip microcomputers designed with CMOS silicon gate technology. They have an OSD, data slicer, and I2C-BUS interface, making them perfect for TV channel selection systems with a closed caption decoder. The M37150EFFP has a built-in PROM that can be

RBS 6000

Abstract: EE16 VERTICAL 10 PIN osd font RBS 6000 -ericsson mcu M37150MB-XXXFP Data more RBS 6000 M37150M8-XXXFP RBS 6000 -ericsson software M37150EFFP M37150M6-XXXFP
Contextual Info: M37150M6/M8/MA/MC/MF-XXXFP, M37150EFFP SNGLE-CHIP 8-BIT CMOS MICROCOMPUTER 1. DESCRIPTION The M37150M6/M8/MA/MC/MF-XXXFP and M37150EFFP are single-chip microcomputers designed with CMOS silicon gate technology. They have an OSD, data slicer, and I2C-BUS interface, making them perfect for TV channel selection systems with a closed caption decoder. The M37150EFFP has a built-in PROM that can be

2SA1037K

Abstract: 2SA1576 SC-59A T106 T107 T146 T147
Contextual Info: 40 E ROHM CO LT] 7020 = ^ D • aGDSM37 7 BRHM 2SA1037K/2SA1576 / T ransistors ' 7 Z 2 7 - 0 C) 2SA1037EC 2SA1576 X tf P K N P y ÿ ^ h ^ v ; ^ /General Small Signal Amp. Epitaxial Planar Super/Ultra Mini-Mold PNP Silicon Transistors • WFÎ’tfîÉSi/'Dimensions Unit: mm)

Contextual Info: N AMER PH IL IP S/D ISCRET E DbE D PowerMOS transistor • ” bbSBTBl 0D14451 4 ■ BUZ32 ^_ j May 1987 GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

t600c

Abstract: MC 139 transistor BUZ32 T0220AB MC139 K158
Contextual Info: N AMER PHILIPS/DISCRETE DbE D _ • PowerMOS transistor ^53131 00m451_M ■ BU Z32 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

MRF1008MC

Contextual Info: IS E 3 I t3ti75SM GGfiTTflM 4 | MOTORCLA SC XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF1008MA MRF1008MB MRF1008MC TECHNICAL DATA The R F L in e 8.0 W P E A K 9 6 0 -1 2 1 5 M H z MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N . . . design ed for C la ss B and C com m on-base amplifier applications

transistor BD 378

Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
Contextual Info: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.

MPSU07

Abstract: ic 31050 MC 139 transistor MPSU57 2S53
Contextual Info: MOTOROLA SC 1SE D I L3b72S4 □ OfiSM'ìS 1 | XSTRS/R F T -3 Ì-0 7 MOTOROLA SEMICONDUCTOR MPS-U07 TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for general-purpose, high-voltage amplifier and driver

EPM7192S

Abstract: EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E epm7064 adapter MAX7000E
Contextual Info: Includes MAX 7000E & MAX 7000S MAX 7000 Programmable Logic Device Family August 2000, ver. 6.02 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)

14n60

Abstract: OT360 14N60E OC57
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet AAGW14N60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packag ed w ith a soft recovery u ltra -fa s t re ctifier and uses an advanced

D2433

Abstract: EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E 100-Pin Package Pin-Out Diagram
Contextual Info: Includes MAX 7000E & MAX 7000S MAX 7000 Programmable Logic Device Family July 1999, ver. 6.01 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)

epm7032

Abstract: EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E K2107
Contextual Info: Includes MAX 7000E & MAX 7000S MAX 7000 Programmable Logic Device Family July 1999, ver. 6.01 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)

Contextual Info: IjBCludW MAX 7000 ÜUX7Q0K& MAX7888S m m m Programmable Logic Device Family . May 1999, ver. 6 Data Sheet Features. • ■ ■ ■ ■ ■ ■ High-performance, EEPROM -based program m able logic devices PLDs based on second-generation M ultiple Array M atrix (MAX )

BGA-404

Contextual Info: MAX 7000A Includes MAX 7000AE Programmable Logic Device Family May 2000, ver. 3.01 Data Sheet Features. • ■ ■ ■ ■ ■ ■ ■ f High-performance 3.3-V EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX

epm7064 adapter

Abstract: epm7192
Contextual Info: Incudes MAX 7000 MAX 7D00E& MAX 7QO0S Programmable Logic Device Family May 1999» ver. 6 Data Sheet Features. * S3 88 M 88 W. H igh-perform ance, EEPROM -based p ro g ram m ab le logic devices PLDs b ased on second-generation M ultiple A rray M atriX (MAX )

Contextual Info: BSO 304SN Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 30 V flbsion

epm7064 adapter

Abstract: EPM71925 MAX7000E epm7192 EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E
Contextual Info: ¿ s u t* M A X 7000 MAX 7000S Programmable Logic Device Family July 1999. ver. 6.01 Datasheet Features • ■ ■ ■ ■ ■ _ High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)

7256S

Abstract: MPU 6000 7160E ATIC 164 D2
Contextual Info: «/SToSSIs MAX 7000 MAX 7000S Programmable Logic Device Family May 1999. ver. 6 Datasheet Features • ■ ■ ■ ■ ■ m High-perform ance, EEPRO M -based program m able logic devices PLDs based on second-generation M ultiple A rray M atrix (MAX®)

MTP12N10L

Contextual Info: MOTOROLA SC X S T R S /R F IM E D I t,3 b ? a S 4 □ 0 ^ 0 2 7 5 7 MOTOROLA - - 3 1 ? | - m SEMICONDUCTOR TECHNICAL DATA MTP12N08L MTP12N10L Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs

IRF150M

Contextual Info: SGS-THOMSON * 5 iL iO T O K S 7 IR F 150 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 1 5 0 . . . . • V d ss 100 V R D S o n Id 0 .0 5 5 n 40 A AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA A T 100°C

M25p64 vdfpn8 footprint

Abstract: D-USB-BRA42-T11 STM32F103ZET6 UM0686 CON2 connector STM32F103ZE STM32F103 ZET6 FTR-110-01-S-D stm32f103 DAC MT008-A
Contextual Info: UM0686 User manual STEVAL-IHM022V1 STM32-based dual motor FOC drive demonstration board Introduction The STEVAL-IHM022V1 demonstration board is designed as a dual motor field-oriented control FOC development platform for STMicroelectronics’ ARM Cortex - M3 core-based

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX