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    onsemi MBRS130T3G

    DIODE SCHOTTKY 30V 1A SMB
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    DigiKey MBRS130T3G Reel 27,500 2,500
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    Mouser Electronics MBRS130T3G 86,803
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    onsemi MBRS130T3

    DIODE SCHOTTKY 30V 1A SMB
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    DigiKey MBRS130T3 Digi-Reel 1
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    onsemi MBRS130T3H

    DIODE SCHOTTKY 30V 1A SMB
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    onsemi MBRS130T3G (ALTERNATE: 463969)

    Diode, Schottky Barrier, Vr 30V, If 1A, Pkg SMB, Vf 0.6V, Tj +125degc, Cs 40A, Ir 10mA | ON Semiconductor MBRS130T3G
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    RS MBRS130T3G (ALTERNATE: 463969) Bulk 50
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    Motorola Mobility LLC MBRS130T3

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    Bristol Electronics MBRS130T3 47,035 12
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    MBRS130T3 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS130T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS130T3 On Semiconductor 1A 30V Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MBRS130T3 Microsemi Schottky Rectifier Scan PDF
    MBRS130(T3) Unknown Silicon Diode Scan PDF
    MBRS130T3-D On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS130T3G On Semiconductor 1A 30V Schottky Rectifier Original PDF
    MBRS130T3G On Semiconductor 1A 30V Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF

    MBRS130T3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking B13 diode SCHOTTKY

    Abstract: No abstract text available
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 marking B13 diode SCHOTTKY

    403A-03

    Abstract: MBRS130T3 MBRS130T3G
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 403A-03 MBRS130T3 MBRS130T3G

    Untitled

    Abstract: No abstract text available
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 MBRS130T3/D

    MBRS130T3

    Abstract: 403A-03 MBRS130T3G
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 MBRS130T3/D MBRS130T3 403A-03 MBRS130T3G

    Untitled

    Abstract: No abstract text available
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 MBRS130T3/D

    marking B13 diode SCHOTTKY

    Abstract: diode marking b13 Marking B13 MBRS130T3 schottky B13
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 Re130T3 marking B13 diode SCHOTTKY diode marking b13 Marking B13 MBRS130T3 schottky B13

    "MARKING B13"

    Abstract: DIODE Marking B13 b13 smb MBRS130T3 Marking B13
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 r14525 MBRS130T3/D "MARKING B13" DIODE Marking B13 b13 smb MBRS130T3 Marking B13

    Untitled

    Abstract: No abstract text available
    Text: MBRS130T3G, NRVBS130T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3G, NRVBS130T3G MBRS130T3/D

    403A-03

    Abstract: MBRS130T3
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130T3 r14525 MBRS130T3/D 403A-03

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    LT1109A

    Abstract: LT1109A-12 LT1332 MBRS130T3 CD105-101K
    Text: LT1332 Wide Supply Range Low Power RS232 Transceiver with 12V VPP Output for Flash Memory U DESCRIPTIO FEATURES Generates Full RS232 Signal Levels from 3V Supply 12V VPP Output Available for Flash Memory Useful with a Wide Variety of Switching Regulators Low Supply Current: I VCC = 1mA


    Original
    PDF LT1332 RS232 LT1332 LT1109A LT1109A-12 MBRS130T3 CD105-101K

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original
    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    ta2024

    Abstract: TRIPATH TA2024 tripath 2024 Tripath TA-2024 IC PSOP-36 TRIPATH Tripath Technology MBRS130T3 MO-166 TA2024 application note
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TA2024 STEREO 15W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER USING DIGITAL POWER PROCESSING™ TECHNOLOGY Technical Information Revision 4.0 – February 2004 GENERAL DESCRIPTION The TA2024 is a 15W/ch continuous average two-channel Class-T Digital Audio Power Amplifier IC


    Original
    PDF TA2024 TA2024 TRIPATH TA2024 tripath 2024 Tripath TA-2024 IC PSOP-36 TRIPATH Tripath Technology MBRS130T3 MO-166 TA2024 application note

    step up DC DC 5v converter out 12V

    Abstract: LTC1628CG IRF7807 LTC1624 LTC1625 LTC1628 LTC1702 LTC1703 LTC1735 LTC1736
    Text: Design Solutions 8 June 1999 2-Step Power Conversion: Portable Power for the Future As microprocessor operating voltages continue to decrease, power conversion for CPU core power is becoming a daunting challenge. A core power supply must have fast transient response, good efficiency, and


    Original
    PDF LTC1628 LTC1703 330pF DO3316P-331HC step up DC DC 5v converter out 12V LTC1628CG IRF7807 LTC1624 LTC1625 LTC1702 LTC1735 LTC1736

    c2992

    Abstract: ADP1108 500uH POWER INDUCTOR with current rating 100mh inductor 100mh inductor data sheet ADP1108AN ADP1108AR
    Text: a Micropower DC-DC Converter Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1108 FEATURES Operates at Supply Voltages From 2.0 V to 30 V Consumes Only 110 ␮A Supply Current Step-Up or Step-Down Mode Operation Minimum External Components Required Low Battery Detector Comparator On-Chip


    Original
    PDF ADP1108 ADP1108-3 ADP1108-5 ADP1108-12 ADP1108 c2992 500uH POWER INDUCTOR with current rating 100mh inductor 100mh inductor data sheet ADP1108AN ADP1108AR

    Tripath Amplifier

    Abstract: TRIPATH TA2020 TA2020-020 TA2020 TA2020020 TRIPATH TECHNOLOGY TRIPATH tripath audio amp circuit MBRS130T3 ta2020 overload
    Text: TECHNICAL INFORMATION Stereo 20W 4Ω Class-T Digital Audio Amplifier using Digital Power Processing TM Technology TA2020-020 June 1999 - Preliminary General Description The TA2020-020 is a two-channel Class-T (TripathTM) Digital Audio Power Amplifier IC using Tripath’s


    Original
    PDF TA2020-020 TA2020-020 TA2020-020, Tripath Amplifier TRIPATH TA2020 TA2020 TA2020020 TRIPATH TECHNOLOGY TRIPATH tripath audio amp circuit MBRS130T3 ta2020 overload

    BAV99LT1

    Abstract: MBRS130T3 MC33153 MHPM7A10S120DC3 PHPM7A10S120DC3 3 phase induction motor
    Text: MOTOROLA Order this document by MHPM7A10S120DC3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MHPM7A10S120DC3 Hybrid Power Module Integrated Power Stage for 2.0 hp 460 VAC Motor Drive Motorola Preferred Device This module integrates a 3–phase inverter, 3–phase rectifier,


    Original
    PDF MHPM7A10S120DC3/D MHPM7A10S120DC3 BAV99LT1 MBRS130T3 MC33153 MHPM7A10S120DC3 PHPM7A10S120DC3 3 phase induction motor

    Design and Fabrication of 5V Constant Voltage Power supply

    Abstract: LTC1628 IRF7807 LTC1624 LTC1625 LTC1628CG LTC1702 LTC1703 LTC1735 LTC1736
    Text: Design Solutions 8 April 1999 2-Step Power Conversion: Portable Power for the Future As microprocessor operating voltages continue to decrease, power conversion for CPU core power is becoming a daunting challenge. A core power supply must have fast transient response, good efficiency, and


    Original
    PDF 100pF LTC1628 LTC1703 DO3316P-331HC Design and Fabrication of 5V Constant Voltage Power supply IRF7807 LTC1624 LTC1625 LTC1628CG LTC1702 LTC1735 LTC1736

    GA10-682K

    Abstract: GA20-103K ADP1073 ADP1173 ADP1173AN ADP1173AR VN2222L 250uh 24V 5A SMPS circuit diagram
    Text: Micropower DC-DC Converter ADP1173 a FEATURES Operates From 2.0 V to 30 V Input Voltages Only 110 ␮A Supply Current Typical Step-Up or Step-Down Mode Operation Very Few External Components Required Low Battery Detector On-Chip User-Adjustable Current Limit


    Original
    PDF ADP1173 ADP1173 C2965 GA10-682K GA20-103K ADP1073 ADP1173AN ADP1173AR VN2222L 250uh 24V 5A SMPS circuit diagram

    BAV99LT1

    Abstract: MBRS130T3 MC33153 MHPM7A25S120DC3 VF 3 phase converter IGBT General Purpose Fast Rectifier T/IRF 4648 hp
    Text: MOTOROLA Order this document by MHPM7A25S120DC3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MHPM7A25S120DC3 Hybrid Power Module Integrated Power Stage for 5.0 hp 460 VAC Motor Drive Motorola Preferred Device This module integrates a 3–phase inverter, 3–phase rectifier,


    Original
    PDF MHPM7A25S120DC3/D MHPM7A25S120DC3 BAV99LT1 MBRS130T3 MC33153 MHPM7A25S120DC3 VF 3 phase converter IGBT General Purpose Fast Rectifier T/IRF 4648 hp

    TRIPATH TA2024

    Abstract: TA2024 TRIPATH TECHNOLOGY TRIPATH FBM2125 TA2024 application note 12v 4 channel AUDIO power AMPLIFIER CLASS-T DIGITAL AUDIO AMPLIFIER 2X15W 180uf 200 v capacitor
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TA2024 2x15W Class-T Digital Audio Amplifier Evaluation Board using Digital Power Processing T M Technology Technical Information Revision B- April 2002 GENERAL DESCRIPTION The EB-TA2024 evaluation board is based on the TA2024, digital audio power


    Original
    PDF EB-TA2024 2x15W EB-TA2024 TA2024, TA2024. TA2024 speakeC15 14mil TRIPATH TA2024 TRIPATH TECHNOLOGY TRIPATH FBM2125 TA2024 application note 12v 4 channel AUDIO power AMPLIFIER CLASS-T DIGITAL AUDIO AMPLIFIER 180uf 200 v capacitor

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan
    PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    MBRS120T3

    Abstract: MBRS14ot3 5817SMJ 5818SMJ 5819SMJ MBRS130T3 MBRS130TR MBRS140T3 SK12 SK13
    Text: 1 Amp Schottky Rectifiers 5817SMJ - 5819SMJ CATHODE BAND Dim. Inches Minimum A B C D E F G H J l-B -l Microsemi Catalog Number 5817SMJ SK12 MBRS120T3 SK13 MBRS130T3 MBRS130TR SK14 MBRS140T3 5818SMJ 5819SMJ -.035 .065 .205 .160 .130 .116 .089 .008 .020


    OCR Scan
    PDF 5817SMJ MBRS120T3 5818SMJ MBRS130T3 MBRS130TR 5819SMJ MBRS140T3 Characte200 5819SM MBRS120T3 MBRS14ot3 MBRS130T3 MBRS130TR MBRS140T3 SK12 SK13

    Untitled

    Abstract: No abstract text available
    Text: u n m t i i q 9 a TECHNOLOGY Micropower DC/DC Converter Flash Memory VPP Generator Adjustable and Fixed 5V, 12V KRTURCS D€SCRIPTIOn • Uses Off-the-Shelf Inductors ■ Low Cost ■ 8-Pin DIP or SO Package


    OCR Scan
    PDF LT1109A 360pA CTX10-1 CD54-100LC CTX20-1 CD54-220LC U1109M CD54-1Q0LC CTX33-2