MBRF20200 Search Results

Contextual Info: LITE-ON SEMICONDUCTOR MBRF20200CT REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES DIM. K A B C A D F 3 E 2 F G H G MECHANICAL DATA J I Case : ITO-220AB molded plastic Polarity : As marked on the body

Contextual Info: Data Sheet Customer： Product : High Power Schottky Diode Part No.: MBRF2040CT/MBRF2060CT/MBRF20100CT/MBRF20150CT MBRF20200CT/MBRF20250CT Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH

20200ct

Abstract: MBRF20200CT marking K
Contextual Info: SEMICONDUCTOR MBRF20200CT MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K MBRF 2 20200CT 016 No. Item Marking Description KEC K KEC CORP. Device Name Lot No. 2007. 7. 27 3 Revision No : 0 MBRF MBRF20200CT

MBRF20150CT

Abstract: mbrf20150 ge 142 MBRF20200CT
Contextual Info: MBRF20150CT THRU MBRF20200CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 20.0 Ampere FEATURES ITO-220AB ● Plastic package has Underwriters Laboratory Flammability ● ● ● ● ● Classification 94V-0 Dual rectifier construction, positive center tap

Contextual Info: SENSITRON SEMICONDUCTOR MBRF20200CT Technical Data Data Sheet 2805, Rev. B MBRF20200CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection Features: • • • • • • 150 ℃ TJ operation

MBRF20200CTG

Abstract: MBRF20200CT-G
Contextual Info: SENSITRON SEMICONDUCTOR
Technical Data Data Sheet 3473, Rev.- MBRF20200CT-G Green Products MBRF20200CT-G SCHOTTKY RECTIFIER Applications: • Switching power supply • Free-Wheeling diodes • Polarity battery protection Features: • 150 °C TJ operation

BRF20200CT

Abstract: Schottky com anode TO220
Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF20200CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

B20200G

Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

20200ct

Abstract: 2045CT MBRF2035CT
Contextual Info: MBRF2035CT - MBRF20200CT CREAT BY ART 20.0 AMPS. Isolated Schottky Barrier Rectifiers ITO-220AB Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MBRF2080C

Abstract: MBRF20200C MBRF20150C
Contextual Info: MBRF2020C thru MBRF20200C Schottky Barrier Rectifiers PRIMARY CHARACTERISTICS IF 20A ITO-220AB VRRM 20~200V IFSM 150A Dimensions in inches and millimeters VF 0.70V, 0.75V, 0.85V, 0.92V TJ max 125°C,150°C Features Mechanical Date ‧Guard Ring for over voltage Protection

MBRF20200CT

Contextual Info: Certificate TH97/10561QM MBRF20200CT Certificate TW00/17276EM DUAL SCHOTTKY BARRIER RECTIFIER PRV : 200 Volts Io : 20 Amperes ITO-220AB 0.134 3.4 DIA. 0.113(3.0)DIA. FEATURES : 0.112(2.85) 0.100(2.55) * Highly Stable Oxide Passivated Junction * Very Low Forward Voltage Drop

Contextual Info: MBRF2035CT thru MBRF20200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MOSPEC MBRF20200CL Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

Schottky

Contextual Info: MBRF2035CT thru MBRF20200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

mbrf 20150CT

Contextual Info: MBRF2045CT-Y thru MBRF20200CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MOSPEC MBRF20200C Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for

Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e ctifier M BRF20200CT The S W IT C H M O D E Power Rectifier employs the Schottky Barrier principle in a large area m etal-to-silico n power diode. S ta te -o f-th e -a rt geometry features

Contextual Info: SANGDEST MICROELECTRONICS MBRF20200 Green Products Technical Data Data Sheet N0082, Rev. A MBRF20200 SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration

B20200

Abstract: hex head screws Rectifier 6 amp 200 volt b20200 diode 10 amp rectifier, TO 220 all silicon metal rectifier diode product List RECTIFIER DIODES Motorola DATA BOOK single phase fully controlled rectifier 221D AN1040
Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20200CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features

b20200

Abstract: b20200 diode 221D AN1040 MBRF20200CT 2-2-1D
Contextual Info: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

Contextual Info: SANGDEST MICROELECTRONICS MBRF20200CTL Technical Data Data Sheet N1536, Rev. - Green Products MBRF20200CTL SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • •

20150C

Abstract: J055 MBRF2035CT a1133 marking code dh Mbrf 20150c 2QS0
Contextual Info: MBRF2035CT-MBRF20200CT TAIWAN SEMICONDUCTOR 5 Isolated 20.0A m p S chottky B arrier R ectifier ITO -220AB g RoHS ,406<10.3)MAX C O M PL IA N C E .1 3 4 (3 .4 )D |A . 1 1 3 (3 .0 )0 lA /' Features <> UL Recognized File it E-326243 .1 1 2 (2 .8 5 ) .1 0 0 (2 .5 5 )

AV2016

Abstract: MBRF20200CT
Contextual Info: SEMICONDUCTOR MBRF20200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=200V. K Fast Reverse Recovery Time : trr=35ns.

B20200G

Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as