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    B20200 Search Results

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    B20200 Price and Stock

    Vishay Semiconductors VB20200C-E3-8W

    DIODE ARR SCHOT 200V 10A TO263AB
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    DigiKey VB20200C-E3-8W Reel 5,600 800
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    onsemi SBRB20200CTT4G

    DIODE ARRAY SCHOT 200V 10A D2PAK
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    DigiKey SBRB20200CTT4G Reel 4,800 800
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    Avnet Americas SBRB20200CTT4G Reel 13 Weeks 800
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    Mouser Electronics SBRB20200CTT4G 18,391
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    Newark SBRB20200CTT4G Cut Tape 495 1
    • 1 $1.61
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    SBRB20200CTT4G Reel 800
    • 1 $1.11
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    Bristol Electronics SBRB20200CTT4G 5,254
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    TME SBRB20200CTT4G 1
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    Richardson RFPD SBRB20200CTT4G 800
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    Avnet Silica SBRB20200CTT4G 800 14 Weeks 800
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    EBV Elektronik SBRB20200CTT4G 15 Weeks 800
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    New Advantage Corporation SBRB20200CTT4G 800 1
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    Vyrian SBRB20200CTT4G 2,018
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    Win Source Electronics SBRB20200CTT4G 5,210
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    onsemi MBRB20200CTT4G

    DIODE ARRAY SCHOT 200V 10A D2PAK
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    DigiKey MBRB20200CTT4G Reel 2,400 800
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    Avnet Americas MBRB20200CTT4G Reel 20,000 9 Weeks 800
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    MBRB20200CTT4G Reel 1,600 9 Weeks 800
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    Mouser Electronics MBRB20200CTT4G 21,116
    • 1 $2.49
    • 10 $1.72
    • 100 $1.37
    • 1000 $0.933
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    Newark MBRB20200CTT4G Cut Tape 1,225 1
    • 1 $0.9
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    Bristol Electronics MBRB20200CTT4G 86
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    MBRB20200CTT4G 62
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    TME MBRB20200CTT4G 1
    • 1 $2.01
    • 10 $1.54
    • 100 $1.11
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    ComSIT USA MBRB20200CTT4G 375
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    NexGen Digital MBRB20200CTT4G 5
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    Richardson RFPD MBRB20200CTT4G 800
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    Chip 1 Exchange MBRB20200CTT4G 2,080
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    Avnet Asia MBRB20200CTT4G 3,200 9 Weeks 800
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    Avnet Silica MBRB20200CTT4G 2,400 10 Weeks 800
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    EBV Elektronik MBRB20200CTT4G 11 Weeks 800
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    Master Electronics MBRB20200CTT4G 3,200
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    Vyrian MBRB20200CTT4G 6,307
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    Win Source Electronics MBRB20200CTT4G 91,394
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    Pentair Equipment Protection - Hoffman STB202008

    IP66 TERM BOX 200X200X80MM
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    DigiKey STB202008 Bulk 1
    • 1 $105.23
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    onsemi MBRB20200CT

    DIODE ARRAY SCHOT 200V 10A D2PAK
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    DigiKey MBRB20200CT Tube
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    Bristol Electronics MBRB20200CT 145 5
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    • 100 $0.4219
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    MBRB20200CT 9
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    Component Electronics, Inc MBRB20200CT 50
    • 1 $3.85
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    • 100 $2.88
    • 1000 $2.5
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    B20200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b20200 diode

    Abstract: 033 motorola B20200 418B-02 tj 305 motorola B20200 MOTOROLA MBRB20200CT
    Text: MOTOROLA Order this document by B20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power B20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power


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    MBRB20200CT/D MBRB20200CT b20200 diode 033 motorola B20200 418B-02 tj 305 motorola B20200 MOTOROLA MBRB20200CT PDF

    BRF20200CT

    Abstract: Schottky com anode TO220
    Text: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF20200CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features


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    MBRF20200CT/D BRF20200CT Schottky com anode TO220 PDF

    B20200

    Abstract: b20200 diode
    Text: B20200CT SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    MBRB20200CT B20200 b20200 diode PDF

    B20200G

    Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
    Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    MBRF20200CT MBRF20200CT/D B20200G B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG PDF

    B20200

    Abstract: MBRB20200CT MBRB20200CTT4 SMD310
    Text: B20200CT Preferred Device SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt


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    MBRB20200CT MBRB20200CT/D B20200 MBRB20200CT MBRB20200CTT4 SMD310 PDF

    B20200G

    Abstract: SCHOTTKY BARRIER RECTIFIER aka B20200G AKA b20200 mbr20200ct-g MBR20200CTG b20200 diode
    Text: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    MBR20200CT MBR20200CT/D B20200G SCHOTTKY BARRIER RECTIFIER aka B20200G AKA b20200 mbr20200ct-g MBR20200CTG b20200 diode PDF

    B20200G

    Abstract: B20200G AKA SCHOTTKY BARRIER RECTIFIER aka Diode marking WW1 B20200 marking code ww1 J1702 MBRB20200CT MBRB20200CTG MBRB20200CTT4
    Text: B20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


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    MBRB20200CT MBRB20200CT/D B20200G B20200G AKA SCHOTTKY BARRIER RECTIFIER aka Diode marking WW1 B20200 marking code ww1 J1702 MBRB20200CT MBRB20200CTG MBRB20200CTT4 PDF

    B20200G

    Abstract: No abstract text available
    Text: MBRJ20200CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    MBRJ20200CTG MBRJ20200CT/D B20200G PDF

    SDB2020

    Abstract: No abstract text available
    Text: B20200PR Schottky Barrier Rectifier DUAL COMMON ANODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability 1  Dual common anode rectifier 3 Pin 1, 3 : Cathode 123


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    SDB20200PR O-220F-3L SDB20200PR KSD-D0O050-000 SDB2020 PDF

    b20200

    Abstract: 418B-02 20200c
    Text: MOTOROLA Order this document by B20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power B20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power


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    MBRB20200CT/D MBRB20200CT b20200 418B-02 20200c PDF

    b20200 diode

    Abstract: B20200 SCHOTTKY BARRIER RECTIFIER aka
    Text: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state- of- the- art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.


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    MBR20200CT 25C/W 165C/W b20200 diode B20200 SCHOTTKY BARRIER RECTIFIER aka PDF

    B20200

    Abstract: hex head screws Rectifier 6 amp 200 volt b20200 diode 10 amp rectifier, TO 220 all silicon metal rectifier diode product List RECTIFIER DIODES Motorola DATA BOOK single phase fully controlled rectifier 221D AN1040
    Text: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20200CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features


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    MBRF20200CT/D MBRF20200CT B20200 hex head screws Rectifier 6 amp 200 volt b20200 diode 10 amp rectifier, TO 220 all silicon metal rectifier diode product List RECTIFIER DIODES Motorola DATA BOOK single phase fully controlled rectifier 221D AN1040 PDF

    b20200

    Abstract: b20200 diode 221D AN1040 MBRF20200CT 2-2-1D
    Text: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide


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    MBRF20200CT r14525 MBRF20200CT/D b20200 b20200 diode 221D AN1040 MBRF20200CT 2-2-1D PDF

    B20200G

    Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
    Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


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    MBRF20200CT MBRF20200CT/D B20200G B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor PDF

    dmbr20200ctp

    Abstract: b20200 MBR20200CTP MBR20200CTP-D B20200P
    Text: MBR20200CTP SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.


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    MBR20200CTP r14525 MBR20200CTP/D dmbr20200ctp b20200 MBR20200CTP MBR20200CTP-D B20200P PDF

    b20200

    Abstract: b20200 diode MBR20200CTG 1505C MBR20200CT
    Text: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They


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    MBR20200CT MBR20200CT/D b20200 b20200 diode MBR20200CTG 1505C MBR20200CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs M BRF20200CT M o to ro la P referre d D evice The SW ITCHM O DE Power R ectifier em ploys the Schottky Barrier principle in a large area m e ta l-to -siilco n power diode. S ta te -o f-th e -a rt geom etry features


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    AN1040. PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by B20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE Power B20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This sta te -o f-the -a rt device is designed for use in high frequency switching power


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    MBRB20200CT/D MBRB20200CT b3b7555 PDF

    B20200

    Abstract: rectifier diode 20 amp 800 volt MBRB20200CT MBRB20200CTT4 SMD310
    Text: B20200CT Preferred Device SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt


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    MBRB20200CT r14525 MBRB20200CT/D B20200 rectifier diode 20 amp 800 volt MBRB20200CT MBRB20200CTT4 SMD310 PDF

    B20200

    Abstract: b20200 diode
    Text: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    MBRF20200CT AN1040. B20200 b20200 diode PDF

    B20200

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R20200CT Switchmode Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This s ta te -o f-th e -a rt device is designed for use in high frequency switching power supplies


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    R20200CT MBR20200CT B20200 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA S w itchm ode P o w er M B20200CT Dual Schottky Rectifier M otorola Preferred Device . . . using Schottky B arrier te ch n olo gy with a platinum b arrier metal, This s ta te -o f-th e -a rt device is designed for use in high frequency switching pi3wer


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    BRB20200CT MBRB20200CT PDF

    MSC1621

    Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
    Text: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the


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    5SMC15AT3 5SMC16AT3 5SMC18AT3 5SMC20AT3 5SMC22AT3 5SMC24AT3 5SMC27AT3 5SMC30AT3 5SMC33AT3 5SMC36AT3 MSC1621 Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931 PDF

    221D-03

    Abstract: No abstract text available
    Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    MBRF20200CT MBRF20200CT/D 221D-03 PDF