mbr10120
Abstract: No abstract text available
Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR20120CE
O-262AA
MIL-STD-202
mbr10120
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • MBR20120CT 20 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop
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MBR20120CT
120Volts
O-220AB
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 20 Amp High Voltage Features • • • • • MBR20120FCT omponents 20736 Marilla Street Chatsworth !"# $ % !"# High Junction Temperature Capability Low Forward Voltage
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MBR20120FCT
MBR20120FCT
ITO-220AB
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New Jersey Semiconductor
Abstract: No abstract text available
Text: J.£i±£u c/ !/ loaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Schottky Barrier Rectifier MBR20120CT FEATURES • Low Forward Voltage 10—» w • 170"c Operating Junction Temperature
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MBR20120CT
O-220C
New Jersey Semiconductor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR20125C Preliminary DIODE 20A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR20125C is a 20A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and
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MBR20125C
MBR20125C
MBR20125CL-TA3-T
MBR20125CG-TA3-T
MBR20125CL-TF3-T
MBR20125CG-TF3-T
QW-R202-025
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MBR20120CT
Abstract: No abstract text available
Text: MOSPEC MBR20120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175℃
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MBR20120CT
MBR20120CT
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Untitled
Abstract: No abstract text available
Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175 MBR20120CT
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MBR20120CT
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • MBR20120FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability
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MBR20120FCT
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • MBR20120FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability
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MBR20120FCT
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • MBR20120CT 20 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop
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MBR20120CT
120Volts
O-220AB
380us
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • MBR20120FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability Good Trade Off Between Low Forward Voltage
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MBR20120FCT
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • MBR20120FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability Good Trade Off Between Low Forward Voltage
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MBR20120FCT
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR20125CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency
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O-220
MBR20125CT
O-220
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MBR2012
Abstract: No abstract text available
Text: MBR20120CTW SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF • For use in low voltage, high frequency inverters, free
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MBR20120CTW
O-220AB
O-220AB
MBR2012
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Untitled
Abstract: No abstract text available
Text: MOSPEC MBR20120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175℃
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MBR20120CT
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Untitled
Abstract: No abstract text available
Text: MOSPEC MBR20120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical application are in
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MBR20120CK
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MBR20120CK
Abstract: No abstract text available
Text: MOSPEC MBR20120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in
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MBR20120CK
MBR20120CK
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 20 Amp High Voltage Features • • • • • MBR20120FCT omponents 20736 Marilla Street Chatsworth !"# $ % !"# High Junction Temperature Capability Low Forward Voltage
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MBR20120FCT
MBR20120FCT
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • MBR20120CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# High Junction Temperature Capability Low Leakage Current Marking: type number
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MBR20120CT
120Volts
O-220AB
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MBR20120CT
Abstract: diode reverse voltage protection
Text: MOSPEC MBR20120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175℃
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MBR20120CT
MBR20120CT
diode reverse voltage protection
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR20120C Preliminary DIODE 20A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR20120C is a 20A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and
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Original
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MBR20120C
MBR20120C
MBR20120CL-TA3-T
MBR20120CG-TA3-T
MBR20120CL-TF3-T
MBR20120CG-TF3-T
QW-R202-010
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 20 Amp High Voltage Features • • x x MBR20120FCT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Power Schottky High Junction Temperature Capability Low Forward Voltage
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MBR20120FCT
MBR20120FCT
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS – 120 Volts – 20 Amperes REVERSE VOLTAGE FORWARD CURRENT I2PAK FEATURES • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR20120CE
O-262AA
MIL-STD-202
300us,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes MBR20125,150,200 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency
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O-220A
MBR20125
O-220A
MBR20200
MBR20150
MBR20125
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