MBR2012 Search Results

mbr10120

Contextual Info: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • MBR20120CT









20 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop

Contextual Info: MCC TM Micro Commercial Components 20 Amp High Voltage Features • • • • • MBR20120FCT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# High Junction Temperature Capability Low Forward Voltage

New Jersey Semiconductor

Contextual Info: J.£i±£u c/ !/ loaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Schottky Barrier Rectifier MBR20120CT FEATURES • Low Forward Voltage 10—» w • 170"c Operating Junction Temperature

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR20125C Preliminary DIODE 20A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR20125C is a 20A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and

MBR20120CT

Contextual Info: MOSPEC MBR20120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175℃

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175 MBR20120CT

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • MBR20120FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • MBR20120FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • MBR20120CT









20 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • MBR20120FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability Good Trade Off Between Low Forward Voltage

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • MBR20120FCT










20 Amp High Voltage Power Schottky High Junction Temperature Capability Good Trade Off Between Low Forward Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR20125CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

MBR2012

Contextual Info: MBR20120CTW SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF • For use in low voltage, high frequency inverters, free

Contextual Info: MOSPEC MBR20120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175℃

Contextual Info: MOSPEC MBR20120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical application are in

MBR20120CK

Contextual Info: MOSPEC MBR20120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

Contextual Info: MCC TM Micro Commercial Components 20 Amp High Voltage Features • • • • • MBR20120FCT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# High Junction Temperature Capability Low Forward Voltage

Contextual Info: MCC TM Micro Commercial Components Features • • • • • MBR20120CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# High Junction Temperature Capability Low Leakage Current Marking: type number

MBR20120CT

Abstract: diode reverse voltage protection
Contextual Info: MOSPEC MBR20120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal.The properietary barrier technology allows for reliable operation up to 175℃

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR20120C Preliminary DIODE 20A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR20120C is a 20A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and

Contextual Info: MCC TM Micro Commercial Components 20 Amp High Voltage Features • • x x MBR20120FCT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Power Schottky High Junction Temperature Capability Low Forward Voltage

Contextual Info: MBR20120CE SCHOTTKY BARRIER RECTIFIERS – 120 Volts – 20 Amperes REVERSE VOLTAGE FORWARD CURRENT I2PAK FEATURES • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes MBR20125,150,200 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency