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    Glenair Inc 380US060XM2009G3

    MILITARY ACCESSORY - Bulk (Alt: 380US060XM2009G3)
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    Interstate Connecting Components 380US060XM2009G3
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    Glenair Inc 380US060XM1607G3

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    Interstate Connecting Components 380US060XM1607G3
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    Glenair Inc 380US044XM1003-3

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    Mouser Electronics 380US044XM1003-3
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    380US044XM1003-3 25 1
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    Interstate Connecting Components 380US044XM1003-3
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    Powell Electronics 380US044XM1003-3 35 1
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    Glenair Inc 380US060XM0802G3

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    Interstate Connecting Components 380US060XM0802G3
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    Glenair Inc 380US060XM1808G3

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    Avnet Americas 380US060XM1808G3 Bulk 3 Weeks 1
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    Mouser Electronics 380US060XM1808G3
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    Interstate Connecting Components 380US060XM1808G3
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    Powell Electronics 380US060XM1808G3 18 1
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    380US Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSC5304EDCP

    Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
    Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


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    TSC5304ED O-251 O-252 TSC5304EDCP TSC5304EDCH O-252 75pcs marking E11 DIODE power transistor Ic 4A NPN to - 251 PDF

    Untitled

    Abstract: No abstract text available
    Text: CS223-4M CS223-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control


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    CS223-4M CS223-4N OT-223 30-November CS223-4N 610-CS223-4M PDF

    APT54GA60B

    Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
    Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


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    APT54GA60BD30 APT54GA60SD30 APT54GA60B APT54GA60BD30 APT54GA60SD30 MIC4452 SD30 PDF

    APT36GA60B

    Abstract: APT36GA60S MIC4452 c 1853
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


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    APT36GA60B APT36GA60S APT36GA60B APT36GA60S MIC4452 c 1853 PDF

    S6065K

    Abstract: JESD22-A101 JESD22-A102 TO-218x Sxx65J
    Text: Teccor brand Thyristors 65 / 70 Amp Standard SCRs Sxx65x & Sxx70x Series Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential.


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    Sxx65x Sxx70x E71639 O-218AC O-218X S6065K S6065K JESD22-A101 JESD22-A102 TO-218x Sxx65J PDF

    quadrac

    Abstract: triac and diac TO-220L quadracs diac 400V 10A alternistor "application note" 400v 15A triac teccor triac application notes JESD22-A101 JESD22-A102
    Text: Teccor brand Thyristors 4 / 6 / 8 / 10 / 15 Amp Quadracs QxxxxLTx Series The Quadrac is an internally triggered Triac designed for AC switching and phase control applications. It is a Triac and DIAC in a single package, which saves user expense by eliminating the need for separate Triac and DIAC


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    E71639 Qxx15LTH Qxx15LTHTP O-220AB Q6010LTH O-220 quadrac triac and diac TO-220L quadracs diac 400V 10A alternistor "application note" 400v 15A triac teccor triac application notes JESD22-A101 JESD22-A102 PDF

    APT28GA60BD15

    Abstract: APT6017LLL MIC4452
    Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


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    APT28GA60BD15 APT28GA60BD15 APT6017LLL MIC4452 PDF

    APT28GA60K

    Abstract: MIC4452
    Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


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    APT28GA60K O-220 shift26) APT28GA60K MIC4452 PDF

    teccor triac application notes

    Abstract: alternistor triac 263 d alternistor "application note" TRIAC 226 b triac 101 amps 400v 15A triac triac 216 12 amp triac heat control TRIAC 226 a
    Text: Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor High Commutation Triacs Qxx15xx & Qxx16xHx Series Description Standard type devices normally operate in Quadrants I & III triggered from AC line. Alternistor type devices only operate in quadrants I, II, & III


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    Qxx15xx Qxx16xHx E71639 2500Vrms O-220AB O-263AA Q6016LH4 O-220 O-263 teccor triac application notes alternistor triac 263 d alternistor "application note" TRIAC 226 b triac 101 amps 400v 15A triac triac 216 12 amp triac heat control TRIAC 226 a PDF

    SD15

    Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


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    APT36GA60BD15 APT36GA60SD15 SD15 APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328 PDF

    APT68GA60B

    Abstract: APT68GA60S MIC4452
    Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


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    APT68GA60B APT68GA60S APT68GA60B APT68GA60S MIC4452 PDF

    APT10035LLL

    Abstract: APT46GA90JD40 MIC4452 max4170
    Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


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    APT46GA90JD40 E145592 APT10035LLL APT46GA90JD40 MIC4452 max4170 PDF

    transistor 206

    Abstract: 2sb857
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR „ DESCRIPTION Low frequency power amplifier. *Pb-free plating product number: 2SB857L „ ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K


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    2SB857 2SB857L 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K 2SB857-x-TN3-F-R 2SB857L-x-TN3-F-R 2SB857-x-TN3-F-T 2SB857L-x-TN3-F-T O-126C O-252 transistor 206 2sb857 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD882 PNP Type Elektronische Bauelemente Epitaxl Planar Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 D E Description A S1 The 2SD882 is suited for the output stage of 0.75W audio, voltage requlator, and relay driver.


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    2SD882 2SD882 100MHz 01-Jun-2002 380us, PDF

    FREDFET

    Abstract: No abstract text available
    Text: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    APT4F120S 195nS FREDFET PDF

    Untitled

    Abstract: No abstract text available
    Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 95V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Ultra Low VCE(SAT) 0.5V @ IC / IB = 3.5A / 40mA Excellent DC current gain characteristics


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    TSD2098A OT-89 TSD2098ACY PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS V -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)


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    WPM2015 OT-23 WPM2015 PDF

    APT64GA90B

    Abstract: MIC4452 DIODE 76A
    Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


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    APT64GA90B APT64GA90S APT64GA90B MIC4452 DIODE 76A PDF

    GMBT1015

    Abstract: BT101
    Text: 1/2 GM BT1015 P NP E PITAXI AL P L ANAR T RANS ISTO R Description The GMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Package Dimensions SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60


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    BT1015 GMBT1015 OT-23 BT101 PDF

    GMPSA27

    Abstract: No abstract text available
    Text: CORPORATION G M P S A2 7 ISSUED DATE :2004/08/12 REVISED DATE :2004/11/29B NPN SILICO N DARLING TON TRANSISTO R Description The GMPSA27 is designed for darlington applications requiring extremely high current gain at collector to 500mA. Package Dimensions


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    2004/11/29B GMPSA27 500mA. PDF

    G2N4401

    Abstract: G2N4403
    Text: CORPORATION G2N4401 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B NP N E PITAX I AL PLANAR T RANSI STOR Description The G2N4401 is designed for general purpose switching and amplifier applications. Features *Complementary to G2N4403 *High Power Dissipation: 625mW at 25


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    G2N4401 2004/11/29B G2N4401 G2N4403 625mW 150mA G2N4403 PDF

    teccor triac application notes

    Abstract: Q6016RH4 TRIAC 226 b triac 263 d triac 216 400v 16A triac alternistor "application note" JESD22-A101 triac symbol TO-220L
    Text: Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor High Commutation Triacs Qxx15xx & Qxx16xHx Series ® Description 15 Amp and 16 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,


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    Qxx15xx Qxx16xHx O-220 O-263 Q6016RH4 Q6016LH4 teccor triac application notes Q6016RH4 TRIAC 226 b triac 263 d triac 216 400v 16A triac alternistor "application note" JESD22-A101 triac symbol TO-220L PDF

    GL965

    Abstract: GL96
    Text: ISSUED DATE :2004/04/25 REVISED DATE :2004/12/08B GL965 NP N E PITAX I AL PLANAR T RANSI STOR Description The GL965 is designed for use as AF output amplifier and flash unit. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10


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    2004/12/08B GL965 GL965 OT-223 GL96 PDF

    GMA06

    Abstract: No abstract text available
    Text: CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J


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    GMA06 PDF