APT68GA60S Search Results
APT68GA60S Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| APT68GA60S |
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Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 68; | Original |
APT68GA60S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
APT68GA60B
Abstract: APT68GA60S MIC4452
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Original |
APT68GA60B APT68GA60S APT68GA60B APT68GA60S MIC4452 | |
100c1aContextual Info: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT68GA60B APT68GA60S APT68GA60S 100c1a | |
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Contextual Info: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
APT68GA60B APT68GA60S switchin51 | |
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Contextual Info: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
APT68GA60B APT68GA60S APT68GA60S |