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    Microchip Technology Inc APT36GA60SD15

    IGBT PT 600V 65A D3PAK
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    NAC APT36GA60SD15 Tube 48
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    APT36GA60SD15 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT36GA60SD15
    		Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original PDF

    APT36GA60SD15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SD15

    Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
    Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		APT36GA60BD15 APT36GA60SD15 SD15 APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328 PDF

    439J

    Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		APT36GA60BD15 APT36GA60SD15 APT36GA60SD15 439J PDF

    Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		APT36GA60BD15 APT36GA60SD15 PDF