MAXIM 1988 ALL Search Results

ICL7652

Abstract: ICL7650 ICL7652CPA ICL7652CPD ICL7652CTV ICL7652CWE ICL7652IJA ICL7652IJD ICL7652ITV strain gauge OP07 amplifier
Contextual Info: 19-3031; Rev 0; 1988 y k i y j X L / M Sfafeillietf Chopper Opmrmtlonml A m plifier _ O w w n f Daacrlptlon _ Faaturaa The Maxim ICL7652 is a chopper-stabilized amplifier, ideal for applications requiring low-level signal ampli­

maxim 1988

Abstract: D-type Connector 25 Pin AN1988 APP1988 MAX1246 MAX1247 MAX1248 MAX4164 MAX872 op rail to rail
Contextual Info: Maxim > App Notes > A/D and D/A conversion/sampling circuits Amplifier and comparator circuits Keywords: low powered op amps, quad op amps, rail- to - rail inputs, rail- to - rail outputs, rail- to - rail op amps, opamp Apr 10, 2003 APPLICATION NOTE 1988 Circuit enables PC-based voltage measurements

maxim 1988

Abstract: AN1988 APP1988 MAX1246 MAX1247 MAX1248 MAX4164 MAX872 PC Printer Port
Contextual Info: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS AMPLIFIER AND COMPARATOR CIRCUITS Keywords: low powered op amps, quad op amps, rail-to-rail inputs, rail-to-rail outputs, rail-to-rail op amps, opamp Apr 10, 2003 APPLICATION NOTE 1988 Circuit Enables PC-Based Voltage

L7652C

Abstract: ICL7652
Contextual Info: 19-3031; Rev 0; 1988 y k i y j X L / M C h o p p e r S fa f e illie tf Opmrmtlonml Amplifier The Maxim ICL7652 is a chopper-stabilized amplifier, ideal for applications requiring low-level signal ampli­ fication and conditioning. This device offers distinct

Contextual Info: D E V E L O P M E N T DATA BYV72F SER IES This data sheet contains advance inform ation and specifications are subject to change w ithout notice. ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in S O T -199 full-pack plastic

TDA4505A

Abstract: TDA4505 colour tv circuit diagram for lg
Contextual Info: D E V EL O P M EN T DATA TDA4505 T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject t o change w ith o u t notice. _ SMALL SIGNAL COMBINATION 1C FOR COLOUR TV G E N E R A L D E S C R IP T IO N The T D A 4 5 0 5 is a T V sub-system circuit, for colour television receivers. For a complete colour television

Contextual Info: BB241 JV VHF VARIABLE CAPACITANCE DIODE The BB241 is a V H F variable capacitance diode in planar technology with a very high capacitance ratio intended for VH F-band A up to 160 M H z in all-band tuners. The diode is encapsulated in the hermetically sealed glass envelope SO D -8 0 suitable for surface mounting.

BYQ28F

Abstract: BYQ28F-50 M3066
Contextual Info: I r N ANER PHILIPS/DISCRETE 2SE D m 1^53^31 0022MQS M • BYQ28F SERIES 7 ^ 0 3 -1 * 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SO T-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery

RZ2833B60W

Contextual Info: N AUER PHILIPS/DISCRETE ObE J> bfc.53131 0015257 5 RZ2833B60W T " 3 ^ - » ^ PU LSED M ICRO W AVE POW ER T R A N SIST O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2,8 to 3,3 GHz.

BY328

Abstract: BY-328
Contextual Info: N AMER PHILIPS/DISCRETE blE D • bbS3T31 DD2b4b2 23b M A P X BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

TA317

Abstract: M3142 Ultra Fast Recovery Double Rectifier Diodes BYQ28F BYQ28F-50
Contextual Info: SbE D • 711002b □ □ m S I D DID ■ PHIN BYQ28F SERIES 1 PHILIPS INTERNATIONAL T - 0 3 - 1 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic

5303-1

Abstract: 74HC MM54HC MM54HC75 MM74HC MM74HC75
Contextual Info: January 1988 Semiconductor MM54HC75/MM74HC75 _ 4-Bit Bistable Latch with Q and Q Output General Description This 4-bit latch utilizes advanced silicon-gate CMOS te c h ­ nology to achieve th e high noise im m unity and low pow er consum ption norm ally associated w ith standard CM OS inte ­

BD 201F

Contextual Info: BD201F; BD203F; BDX77F PHILIPS INTERNATIONAL SbE D • 711002b 0042Û0Ô AMS ■ PHIN T '3 3 - O ^ SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .

B0947

Abstract: 947f BD944F BD943 transistor d 947f BD943F BD945F BD947F BD948F 7Z95293
Contextual Info: BD943F; BD945F BD947F PHILIPS INTERNATIONAL 5fc,E ] • 7110fi5b DCm3ID7fl ÔTT M P H I N T - 3 3 ' 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, eachina S O T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 4 4 F , BD946Fand B D 948F.

BDT65CF

Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C
Contextual Info: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting

BDT62AF

Abstract: bot62 BDT62BF BDT62CF BDT62F BDT63AF BDT63BF BDT63CF BDT63F
Contextual Info: BDT62F; BDT62AF J BDT62BF; BDT62CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

Contextual Info: BY359F—1500 M A IN T E N A N C E TYPE y FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery times. Their electrical isolation makes them ideal fo r m ounting on a common heatsink alongside other

7z32

Abstract: bu 517 BDT41AF BDT41BF BDT41CF BDT41F BDT42BF BDT42F 7Z329
Contextual Info: N AMER PHILIPS/ D I S C R E T E 2SE il m D ^53^31 GQn?37 3 • BDT42F; 42AF; BDT42BF; 42CF - 3 3 - / 7 T SILICON EPITAXIAL POW ER TRA N SISTO R S PNP silicon epitaxial power transistors, each in a S O T 1 8 6 envelope with an electrically insulated mounting base.

ci-42

Contextual Info: BD643F; 645F; 647F BD649F: 651F_ P hilips sbE d international • GOME^b b « phin SILICON DARLINGTON POWER TRAN SISTO RS N PN silicon Darlington transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D 6 44 F , B D 6 46 F , B D 6 48 F , B D 6 5 0 F and BD 6 52 F .

BY359F-1500

Abstract: m2296 BY359F IEC134
Contextual Info: Philips Components BY359F—1500 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery times. Their electrical isolation makes them ¡deal for mounting on a common heatsink alongside other

TIP32AF

Abstract: 31af 31df transistor tip31 TIP31BF TIP31DF TIP31F TIP32BF TIP32CF TIP32DF
Contextual Info: TIP31F; 31AF TIP31BF; 31CF TIP31DF PHILIPS INTERNATIONAL SfciE D • V 7110Ô5L 00M34Ô2 =}S3 * P H I N T- 3 3 -0 7 S IL IC O N EPITA XIA L PO W E R T R A N S IS T O R S N PN silicon power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base.

TIP41CF

Abstract: TIP41F TIP41AF TIP41BF TIP42BF TIP42F
Contextual Info: _ PHILIPS TIP42F; 42A F TIP42BF; 42CF J^ INT ERN AT ION AL SbE D • 7110ÛSb Ü04354S 15Û « P H I N r - 3 ? - / < 7 SILIC O N EPITAXIAL P O W E R T R A N S IS T O R S PNP silicon epitaxial power transistors, e a c h in a S O T 1 8 6 envelope with an electrically insulated

BDT64AF

Abstract: BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F r64A 004887
Contextual Info: BDT64F; BDT64AF BDT64BF: BDT64CF PHILIPS INTERNATIONAL SbE T> • VllDflEti 00432Ö2 CHI ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

NE5560N

Abstract: ne5560 ne5560d se5560
Contextual Info: NE/SE5560 Signetics Switched-Mode Power Supply Control Circuit Product Specification Linear Products DESCRIPTION FEATURES The NE/SE5560 is a control circuit for use in switched-mode power supplies. This single monolithic chip incorporates all the control and housekeeping pro­