TIP32BF Search Results

Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 711002b 00434=10 210 M P H I N T -J 3 -I 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed

TIP31AF

Abstract: TIP31BF TIP31CF TIP31DF TIP31F TIP32BF TIP32DF TIP32F
Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed

Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed

Contextual Info: TIP32BF Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)3.0

TIP32AF

Abstract: TIP32DF TIP31AF TIP31BF TIP31CF TIP31F TIP32BF TIP32F 32-AF
Contextual Info: TIP32F; 32 A F TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 7110a2b 0 0 4 3 ^ 0 210 M P H I N T - 3 3 - 1 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.

T1P31DF

Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed