MARKING KN2 Search Results

KN2222AS

Contextual Info: SEMICONDUCTOR KN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZGA 1 2 Item Marking Description Device Mark ZGA KN2222AS hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KN2222S

Contextual Info: SEMICONDUCTOR KN2222S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZBA 1 2 Item Marking Description Device Mark ZBA KN2222S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KN2907AS

Contextual Info: SEMICONDUCTOR KN2907AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZHA 1 2 Item Marking Description Device Mark ZHA KN2907AS hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KN2907S

Contextual Info: SEMICONDUCTOR KN2907S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZDA 1 2 Item Marking Description Device Mark ZDA KN2907S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

2222A

Abstract: transistor 2222a data sheet transistor KN2222A kn2222a transistor 2222a kn 2222a Kn2222A transistor 2222A2 2222A transistor KN2222A datasheet
Contextual Info: SEMICONDUCTOR KN2222A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2222A 2 816 No. Item 3 Marking Description KN Series Name 2222A Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16

2907A

Abstract: MARKING 2907A 2907A EQUIVALENT 2907a transistor TO92 package 2907 2907A TO-92 KN2907A kn2907A EQUIVALENT 2907a2
Contextual Info: SEMICONDUCTOR KN2907A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2907A 2 816 No. Item 3 Marking Description KN Series Name 2907A Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16

2222 kn a

Abstract: KN2222 2222 2222 a 2222 diode marking KN
Contextual Info: SEMICONDUCTOR KN2222 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2222 2 816 No. Item 3 Marking Description KN Series Name 2222 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week

2907

Abstract: a 2907 transistor 2907 KN2907 2907 a
Contextual Info: SEMICONDUCTOR KN2907 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2907 2 816 No. Item 3 Marking Description KN Series Name 2907 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week

e210882 motherboard manual

Abstract: manual intel desktop board e210882 manual motherboard d33025 e210882 motherboard manual jumper set e210882 manual motherboard canada ices 003 e210882 Intel Desktop Board E210882 d33025* manual manual intel desktop board d33025 e210882 N232 motherboard manual
Contextual Info: Intel Desktop Board DG41KR Product Guide Order Number: E68225-001 Revision History Revision -001 Revision History First release of the Intel® Desktop Board DG41KR Product Guide Date September 2009 If an FCC declaration of conformity marking is present on the board, the following statement applies:

KN2222AS

Abstract: KN2222S ZGA SOT23
Contextual Info: SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current Low Saturation Voltage D : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. 3 G A 2 H : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

KN2907AS

Abstract: KN2907S KN2907S/2907AS
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : VCEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

marking EE

Abstract: KN2222AS KN2222S SOT-23 type name HJ 13002
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM A B : Ic E x -1 0 n A M a x . ; V ce - 6 0 V , V e b (off )-3 V . • Low Saturation Voltage

KN2222AS

Abstract: KN2222S
Contextual Info: SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =0.3V(Max.) ; IC=150mA, IB=15mA. 3 G A 2 D : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.

2222A

Abstract: KN2907S KN2907AS 2222AS
Contextual Info: SEMICONDUCTOR KN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current Low Saturation Voltage D : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. 3 G A 2 H : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA.

zener diode marking code C3 sot23

Abstract: KN1 SOT-23 sot-23 DIODE marking code D3 marking code C5 sot23 zener marking code C3 sot23 F3 SOT-23 DIODE sot-23 Marking N2 marking code E5 sot23
Contextual Info: WTE POWER SEMICONDUCTORS MMBZ5221B – MMBZ5262B Pb 350mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction L 350mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability

MARKING KN2

Abstract: DIODE ZENER KH5 KN1 SOT-323
Contextual Info: WTE MMBZ5221BW– MMBZ5262BW Pb POWER SEMICONDUCTORS 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability

Contextual Info: WTE POWER SEMICONDUCTORS MMBZ5221B – MMBZ5262B Pb 350mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction L 350mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability

SOT89 MARKING CODE

Abstract: DXT651 DXT651-13 DXT751
Contextual Info: DXT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DXT751) Ideally Suited for Automated Assembly Processes

Contextual Info: MMBZ5221B – MMBZ5262B 350mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Planar Die Construction      350mW Power Dissipation 2.4V – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application

Contextual Info: MMBZ5221BW – MMBZ5262BW 200mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Planar Die Construction      200mW Power Dissipation 2.4V – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application

Contextual Info: DXT651 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DXT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

MARKING KN2

Abstract: MARKING 06 SOT89 DXT651 DXT651-13 DXT751
Contextual Info: DXT651 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DXT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: DZT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

DZT651

Abstract: DZT651-13 DZT751
Contextual Info: DZT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT751) Ideally Suited for Automated Assembly Processes