SBT3904F
Abstract: SBT3906F
Text: SBT3904F Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with SBT3906F Ordering Information
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SBT3904F
SBT3906F
OT-23F
KST-2083-000
100MHz
10mAdc,
SBT3904F
SBT3906F
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SBT42F
Abstract: SBT92F IE 500
Text: SBT42F Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42F : 300V • Complementary pair with SBT92F Ordering Information Type NO. Marking SBT42F Package Code
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SBT42F
SBT92F
OT-23F
KST-2077-000
SBT42F
SBT92F
IE 500
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PC 13001 TRANSISTOR
Abstract: IC PC 124 STD123S STA124S
Text: STA124S Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123S Ordering Information Type NO. Marking STA124S Package Code 124
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STA124S
STD123S
OT-23
KST-2100-000
-100mA
-500mA,
-50mA
PC 13001 TRANSISTOR
IC PC 124
STD123S
STA124S
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SBT2222F
Abstract: SBT2907F IC600
Text: SBT2222F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information
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SBT2222F
SBT2907F
OT-23F
KST-2079-000
30Vdc,
150mAdc,
15mAdc
30Vdc
SBT2222F
SBT2907F
IC600
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STD123SF
Abstract: No abstract text available
Text: STD123SF Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability
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STD123SF
OT-23F
KST-2095-001
100mA
500mA,
STD123SF
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KN3903S
Abstract: KN3905S
Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.
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KN3905S
-50mA,
-50nA
KN3903S.
Width300
100kHz
KN3903S
KN3905S
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KTC3876S
Abstract: KTA1505S
Text: SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A H 1 P Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage
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KTC3876S
KTA1505S.
400mA.
10x8x0
KTC3876S
KTA1505S
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KN2222AS
Abstract: KN2222S ZGA SOT23
Text: SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current Low Saturation Voltage D : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. 3 G A 2 H : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
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KN2222S/AS
150mA,
KN2907S/2907AS.
KN2222S
KN2222AS
10x8x0
KN2222AS
KN2222S
ZGA SOT23
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wa SOT-23
Abstract: STN2222AS STN2907AS
Text: STN2907AS Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current • Low collector saturation voltage • Complementary pair with STN2222AS Ordering Information Type NO.
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STN2907AS
STN2222AS
OT-23
KST-2058-001
-10mA,
-10mA
-150mA,
-15mA
wa SOT-23
STN2222AS
STN2907AS
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kst207
Abstract: STN3904SF STN3904 STN3906SF
Text: STN3904SF Semiconductor NPN Silicon Transistor Descriptions • General small signal amplifier • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with STN3906SF Ordering Information
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STN3904SF
STN3906SF
OT-23F
KST-2074-000
kst207
STN3904SF
STN3904
STN3906SF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=-130V, VCEO=-120V H ・Low Leakage Current. 1 : ICBO=-100nA Max. @VCB=-100V
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2N5400S
-100nA
-100V
-50mA,
-130V,
-120V
-100V,
-10mA
-50mA
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KIA431Z
Abstract: KIA431 KIA431A 3Z SOT-23 KIA431F KIA431B KIA431AT KIA431ZM KIA431ZF
Text: SEMICONDUCTOR KIA431 Series TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT PROGRAMMABLE PRECISION REFERENCES The KIA431 Series integrated circuits are three-terminal programmable shunt regulator diodes. These monolithic IC voltage reference operate as a low temperature coefficient zener which is programmable from Vref
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KIA431
100mA
KIA431Z
KIA431A
3Z SOT-23
KIA431F
KIA431B
KIA431AT
KIA431ZM
KIA431ZF
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2N7002KA
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A G ・Rugged and reliable.
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2N7002KA
2N7002KA
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BCW29
Abstract: BCW30
Text: SEMICONDUCTOR TECHNICAL DATA BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW31/32 DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30
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OCR Scan
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BCW29/30
BCW31/32
OT-23
-10j/A
BCW29
BCW30
-10mA,
BCW30
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KN2907AS
Abstract: KN2907S KN2907S/2907AS
Text: SEMICONDUCTOR TECHNICAL DATA KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : VCEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.
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OCR Scan
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KN2907S/AS
-50nA
-150mA,
-15mA.
KN2222S/AS.
KN2907S
KN2907AS
10x8x0
KN2907AS
KN2907S/2907AS
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KN2222S
Abstract: KN2222AS
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRA N SISTO R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : I c E x - 1 0 n A M a x . A B ; V c e = 6 0 V , V e b (o f f ) - 3 V .
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OCR Scan
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KN2222S/AS
150mA,
KN2907S/2907AS.
KN2222S
KN2222AS
10x8x0
KN2222AS
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BC857
Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C
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OCR Scan
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BC856/7/8
BC846/847/848.
BC856
BC857
BC858
BC857
BC857 KEC
MARKING KEG SOT-23
BC856B
BC856A
BC857A
BC857B
BC857C
BC858
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KTN2222AS
Abstract: KTN2222S KTN2222AS SOT-23
Text: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.
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OCR Scan
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KTN2222S/AS
15QmA,
KTN2907S/2907AS.
KTN2222S
KTN2222AS
10x8x0
KTN2222AS
KTN2222AS SOT-23
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MARK YC
Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848 BC848A
Text: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC846/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES DIM • High Voltage : BC846 V Ceo = 6 5 V . • For Complementary With PNP Type BC856/857/858.
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OCR Scan
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BC846/7/8
BC846
BC856/857/858.
BC847
BC848
MARK YC
BC846A
BC846B
BC847
BC847A
BC847B
BC847C
BC848
BC848A
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0107MA
Abstract: KTC9018S
Text: SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L L 3 G H A 2 1 RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage
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KTC9018S
200MHz
10x8x0
0107MA
KTC9018S
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KTC9011S
Abstract: IC-550 ktc9011
Text: SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE E B L L MAXIMUM RATING Ta=25 3 G H A 2 D High Power Gain : Gpe=29dB(Typ. at f=10.7MHz. 1 ) CHARACTERISTIC SYMBOL
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KTC9011S
10x8x0
KTC9011S
IC-550
ktc9011
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Untitled
Abstract: No abstract text available
Text: STA8550SF Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STC8050SF Ordering Information Type NO. Marking Package Code STA8550SF 8B□ SOT-23F □ :hFE rank
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STA8550SF
STC8050SF
OT-23F
KSD-T5C001-000
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Untitled
Abstract: No abstract text available
Text: SBT42 Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42 : 300V • Complementary pair with SBT92 Ordering Information Type NO. Marking SBT42 M1A Package Code
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SBT42
SBT92
SBT42
OT-23
KST-2040-003
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Untitled
Abstract: No abstract text available
Text: STD123AS Semiconductor NPN Silicon Transistor Features • • • • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. Ordering Information
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STD123AS
100mA
STD123AS
OT-23
KSD-T5C016-001
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