MARKING H15 Search Results

MARKING H15 Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

MARKING H15 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B824 transistor Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information	Original	PDF	T110/T212 CSR13) MIL-PRF-39003/1 T111/T213 CSR91) MIL-PRF-39003/4 CSR09) MIL-PRF-39003/2 T140/T242 CSR23) B824 transistor a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
transistor a564 Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026 Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information	Original	PDF	T110/T212 CSR13) MIL-C-39003/1 T111/T213 CSR91) MIL-C-39003/4 CSR09) MIL-C-39003/2 T140/T242 CSR23) transistor a564 a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
106 16k Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270 Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information	Original	PDF	T110/T212 CSR13) MIL-PRF-39003/1 T111/T213 CSR91) MIL-PRF-39003/4 CSR09) MIL-PRF-39003/2 T140/T242 CSR23) 106 16k capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Z15L470H Abstract: No abstract text available Text: SUPPRESSION RADIAL LEAD METAL OXIDE VARISTORS–HIGH ENERGY SERIES CKE Part Number Marking On Part Z5L180H Z5L220H Z5L270H Z5L330H Z5L390H Z5L470H Z5L560H Z5L680H Z5L820H Z5L101H Z5L121H Z5L151H Z5L181H Z5L201H Z5L221H Z5L241H Z5L271H Z5L301H Z5L331H Z5L361H	Original	PDF	Z5L180H Z5L220H Z5L270H Z5L330H Z5L390H Z5L470H Z5L560H Z5L680H Z5L820H Z5L101H Z15L470H
ML35 Abstract: ML35PT ML31PT S7-200 SMC MARKING S6 SM4003S MARKING S6 smB SOD-123S USM2 s7 200 Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Maximum Maximum Average Forward Peak Reverse Peak Rectified Current Surge Current Current Reverse @Half-Wave @ 25°C @ 8.3mS Voltage Resistive Load Superimposed TA IR IO PRV IFM Surge	Original	PDF	PSM11PT OD-123S PSM12PT PSM13PT MCL51PT MCL52PT MCL53PT MCL54PT MCL55PT ML35 ML35PT ML31PT S7-200 SMC MARKING S6 SM4003S MARKING S6 smB SOD-123S USM2 s7 200
5800c Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800 Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V	Original	PDF	TM5500/TM5800 TM5800-933 CoolRun80 5800C093310 TM5800-867 5800C086710 TM5800-800 5800A080010 TM5500-800 5800c bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
bios programmer Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP	Original	PDF	TM5800 TM5800-1000-ULP CoolRun80 5800T100021 TM5800-1000-VLP 5800N100021 TM5800-1000-LP 5800P100021 bios programmer sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
block diagram of crusoe processor Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667 Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz	Original	PDF	TM55E/TM58E TM58EX-933 58EXAE093321 TM58EL-800 58ELAD080021 TM55EL-667 55ELAC066721 TM55E/TM58E block diagram of crusoe processor bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
B41303-A3109-M Abstract: B43303-D227-M b933 h337 B5159 Text: Snap-In Capacitors 85 °C B 41 303 B 43 303 GP grade For universal application Construction ● ● ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface	Original	PDF	F/400 B41303-A3109-M B43303-D227-M b933 h337 B5159
d687 Abstract: h337 a7338 C2227 transistor D227 EPCOS 1400 09 O B568 L2227M B41303-A7338-M equivalent j8338 Text: Snap-In Capacitors B 41 303 85 °C B 43 303 B 41 303, B 43 303 GP grade For universal application Construction • Charge-discharge proof, polar ■ Aluminum case, fully insulated ■ Snap-in solder pins to hold component in place on PC-board ■ Minus pole marking on case surface	Original	PDF
marking W26 sot23 Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89 Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters	Original	PDF	OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
B82720-H15-A25 Abstract: B82720-H15 B82720-H15-A16 B82720-H15-A28 Text: Chokes for Data and Signal Lines B82720-H15 Double Chokes Rated voltage 42 Vac/80 Vdc Rated current 0,2 to 0,7 A Rated inductance 4,7 to 68 mH Construction • Current-compensated ring core double choke with ferrite core ■ Plastic case Features ■ Case flame-retardant as per UL 94 V-0	Original	PDF	B82720-H15 Vac/80 SSB1408-6 B82720-H15-A16 B82720-H15-A25 B82720-H15-A28 B82720-H15-A30 B82720-H15-A35 SSB1411-Q B82720-H15-A25 B82720-H15 B82720-H15-A16 B82720-H15-A28
Untitled Abstract: No abstract text available Text: Data and signal line chokes Common-mode chokes, ring core 2.2 … 47 mH, 100 mA, 60 °C Series/Type: B82791G15/H15 7ffÁRspp October 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.	Original	PDF	B82791G15/H15 AC/80 B82791G15/H15 B82791G15
2768-M Abstract: B82791H0015A016 IND0214-8-E IND0215-W-E Text: Data and signal line chokes Common-mode chokes, ring core 2.2 … 47 mH, 100 mA, 60 °C Series/Type: B82791G15/H15 7ffÁRspp October 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.	Original	PDF	B82791G15/H15 AC/80 B82791G15 2768-M B82791H0015A016 IND0214-8-E IND0215-W-E

Untitled Abstract: No abstract text available Text: Data and signal line chokes Common-mode chokes, ring core 2.2 … 47 mH, 100 mA, +60 °C Series/Type: B82791G15/H15 Date: October 2008, October 2011 a~í~=pÜÉÉí EPCOS AG 2011. Reproduction, publication and dissemination of this publication, enclosures	Original	PDF	B82791G15/H15 AC/80 B82791G15
general tolerance ISO 2768-M Abstract: No abstract text available Text: Data and signal line chokes Common-mode chokes, ring core 2.2 … 47 mH, 100 mA, +60 °C Series/Type: B82791G15/H15 Date: October 2008, October 2011 a~í~=pÜÉÉí EPCOS AG 2011. Reproduction, publication and dissemination of this publication, enclosures	Original	PDF	B82791G15/H15 AC/80 B82791G15/H15 B82791G15 general tolerance ISO 2768-M
SIMID 02 Abstract: B82791-H15-A16 Chokes B82791-G15-A14 siemens matsua RF B82791-G15-A16 H15-A16 B82791-H15-A25 siemens matsushita RF ferrite Ring Core matsushita Text: Chokes RF Chokes for Data and Signal Lines SIMID 02 Double Chokes Series B82791-G15 B82422 B82791-H15 Rated voltage 42 Vac/80 Vdc Rated current 0,1 A Rated inductance 2,2 to 38 mH Construction ● Current-compensated ring core double choke with ferrite core	Original	PDF	B82791-G15 B82422 B82791-H15 Vac/80 -G15-A16 -H15-A16: B82791-G15-A14 B82791-H15-A25 B82791-G15-A16 B82791-H15-A16 SIMID 02 B82791-H15-A16 Chokes B82791-G15-A14 siemens matsua RF B82791-G15-A16 H15-A16 B82791-H15-A25 siemens matsushita RF ferrite Ring Core matsushita
B82791-H15-A16 Abstract: transistor A16 B82791-G15-A16 B82791-G15-A14 B82791-H15-A25 H15-A16 B82791-G15 B82791-G15-A17 B82791-H15 B82791H15A25 Text: Chokes for Data and Signal Lines B82791-G15 Double Chokes B82791-H15 Rated voltage 42 Vac/80 Vdc Rated current 100 mA Rated inductance 2,2 to 38 mH Construction • Current-compensated ring core double choke with ferrite core ■ Plastic case Features ■ Vertical or horizontal version	Original	PDF	B82791-G15 B82791-H15 Vac/80 B82791-H15-A16 B82791-H15-A25 B82791-G15-A17 B82791-G15-A16 B82791-G15-A14 B82791-H15-A16 transistor A16 B82791-G15-A16 B82791-G15-A14 B82791-H15-A25 H15-A16 B82791-G15 B82791-G15-A17 B82791-H15 B82791H15A25
Untitled Abstract: No abstract text available Text: PART NUMBER UNCONTROLLED DOCUMENT REV. SSH-H1505 0.60 [ 0.0 2 4 ] NOTE: 1. LX MARKING 2. MOLD CAVITY # MARKING 3. MATERIAL: BLACK PPS UL 94V-0 RATING. UNCONTROLLED DOCUMENT ♦UNLESS OTHERWISE SPECIFIED TOLERANCES PER DECIMAL PRECISION ARE: X=±1 ±0.039 , X.X=±0.5 (±0.020), X.XX=±0.25 (±0.010), X.XXX=±0.127 (±0.005).	OCR Scan	PDF	SSH-H1505
transistor D 716 Abstract: No abstract text available Text: IMH15A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMH15A; H15 IMH15A (SMT6) 2 .9 ± 0 .2 1. 9 2 0 . 2 u .a r fo.95 0.95Ì • • • package contains two independent	OCR Scan	PDF	IMH15A SC-74) IMH15A; DTC144TKA) SC-59) IMH15A transistor D 716
BFS36 Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63 Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A	OCR Scan	PDF	BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A marking W4 NPN 2N2475 BFS37 f025 MARKING BS
Untitled Abstract: No abstract text available Text: c • DIMENSIONS H L H D DIMENSIONS mm TYPE RLR 05 RLR 07 COATING COLOR : LIGHT BROWN MARKING : ALPHA/NUMERIC, COLOR CODE RLR 20 RLR 32 RLR 42 ■ RATING RATING AMBIENT TEMP TYPE D d 3.81 ±0.51 c6.35 oc ±4. 0.79 i, i7 9.53 ± 1.04 ,14.27± . ov, 0.79 i.o7	OCR Scan	PDF	E-96-F E-24-G-J H-155T; 100KJ2â 100KJ2 100KU-51MJ2
F760 Abstract: GGT DIODE ERB32 F553 H150 T151 T810 T930 J3E diode Text: ERB32 i .2A • * » ■ * » : Outline Drawings FAST RECOVERY DIODE : Features Super high speed switching H S tF I Marking • te V F A 5- 3 - V ; fi Low V F Color code : Orange • «fifS-ft Abridged type name ŒŒ? « Voltoge class D yh fc Lot No. High reliability	OCR Scan	PDF	ERB32 TKESTS30 aTi30S3 I95t/R89) F760 GGT DIODE F553 H150 T151 T810 T930 J3E diode
JT MARKING Abstract: SC321 SC321-2 marking VM Text: SC321 1.0A I J H B ' i i i : Outline Drawings m a m # 4 * r- v FAST RECOVERY DIODE I/Ü 'm r < SI ¿ZEH 04 135* ! !2 m ! ! : Features 12-“ ! 135ta* s-t-o? ! \%z7n : Marking S urface m ount device » is « » * H igh voltage by m esa d esign. • S fk 8 &	OCR Scan	PDF	SC321 SC321-2 f-150 JT MARKING marking VM

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MARKING H15 Search Results

MARKING H15 Result Highlights (5)

MARKING H15 Datasheets Context Search

B824 transistor

transistor a564

106 16k

Z15L470H

ML35

5800c

bios programmer

block diagram of crusoe processor

B41303-A3109-M

d687

marking W26 sot23

B82720-H15-A25

Untitled

2768-M

Untitled

general tolerance ISO 2768-M

SIMID 02

B82791-H15-A16

Untitled

transistor D 716

BFS36

Untitled

F760

JT MARKING