MARKING CODE BEM Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

BDP 281

Contextual Info: Surface Mount Transient Voltage Suppressors 1500 W Part Number "Gull Wing" "Mod.J-Bend" Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @ Test Curr. Min. Max. Maximum Clamping Vltg. @ IPPM Operating Junction and Storage Temperature: -55 oC to 150 oC

Contextual Info: SIEMENS NPN Silicon Darlington Transistors BC 875 . BC 879 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 876, BC 878 BC 880 PNP Type Marking BC 875 BC 877 BC 879 Ordering Code PinClonfiguration 1 2 3 Package1)

Contextual Info: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCP 28 BCP 48 For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134

Contextual Info: SIEMENS NPN Silicon Switching Transistors PZT 2222 PZT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907 A (PNP) Type Marking Ordering Code (tape and reel) Pin Coni igura ion

PT3921

Abstract: 4pin hall hall sensor 4pin TO-92-4pin hall driver DATASHEETS SENSOR O2 hall sensor ic 4pin 175 hall sensor Prolific Technology pt392
Contextual Info: DC Brushless Motor Hall Driver IC PT3921 Single coil Hall Driver IC Applications Package: TO-92-4pin Single coil DC brushless motor Support pre-driver application X=2.10mm Sensor location Z=0.43mm Y=1.25mm Features Marking side 4 Part Number: 3921 Date Code: xx Year xx(week)

SOT23 marking 828

Abstract: 46 marking
Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3

BCV62C

Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks

Contextual Info: SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 • High DC current gain • Low collector-emitter saturation voltage • Complementary types: BSS 79, BSS 81 NPN Type BSS 80 BSS 80 BSS 82 BSS 82 B C B C Marking Ordering Code (tape and reel) Pin Configuration

j 6910

Abstract: transistor j 6910
Contextual Info: S IE M E N S PNP Silicon AF Transistor • • • • • BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura tion

3904

Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
Contextual Info: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*

BCX20

Contextual Info: S IE M E N S NPN Silicon A F Transistors BCX 58 BCX 59 • High current gain • Low collector-emitter saturation voltage • Complementary types: B C X 78, B C X 79 PNP Type BCX BCX BCX BCX BCX BCX Marking 58 58 58 59 59 59 VIII IX X VIII IX X Ordering Code

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

Contextual Info: PFC Drosseln PFC Chokes Für Blindleistungskompensation B82991-S*-N1 For power factor correction B82991-S*-N1 • Reduzierung von Oberschwingungen ■ Geblechter Eisenkern ■ Spulenkörper UL 94 V-0 ■ Lötösen Bemessungsspannung UR: L-Toleranz: Umgeb.-Temp.:

Contextual Info: SMT-Power-Induktivitäten SMT Power Inductors B82462-A4 Ungeschirmt B82462-A4 Unshielded • Baugröße: 6 x 6 x 3 mm ■ Kernmaterial: Ferrit ■ Hohe Bemessungsströme ■ Size: 6 x 6 x 3 (mm) ■ Core material: ferrite ■ High current ratings Klimakategorie:

Contextual Info: Bedrahtete HF-Drosseln Leaded RF Chokes HBC-Drosseln High-current Bobbin Core HBC chokes (High-current Bobbin Core) • Rollenkern aus Ferrit ■ BC-Drossel mit höherem Bemessungsstrom ■ Umhüllung schwer entflammbar ■ Ferrite drum core ■ BC choke with higher rated current

A55END

Contextual Info: ï ’ INCORPORATED. xLLE RECHTE ifORBEHuLTEN iHArEDuim.- _ ’A55END ZUi 9 67550 BE5CHREIBJJG N0TE5 Bemerkungen A AMP-LOGO AND AMP-NUMBER AMP-Logo und AMP—Nummer MARKING WenkstoFfkennze A P A N E L M O U N T I N G W I T H F I X I N G R I NG AM R-NO . 96 5687 -1

pbt-GF15

Abstract: PPI0001721 PPI0001722 ak2 connector 125225 ppi0001 PPI0001723 pbtgf15 PPI0001642 1/PBT-GF15 CONNECTOR
Contextual Info: Bemerkung NOTES 1 Veredelung im Kontaktierungsbereich min.0.8 my AuCo 0.3 über 1.25-2.25 my Ni TERMINAL: PLATING CONTACT AREA: MIN.0.8 my AuCo 0.3 OVER 1.25-2.25 my Ni 3 Retainer fuer Kodierung I / II / III siehe Zeichnung 6 900 51 03 / 17 / 20 / 31 RETAINER FOR CODING I / II / III SEE DRAWING 6 900 51 03 / 17 / 20 / 31

Contextual Info: SMT-Power-Induktivitäten SMT Power Inductors B82471, B82473, B82475 Ungeschirmt B82471, B82473, B82475 Unshielded • Kernmaterial: Ferrit ■ Hohe Bemessungsströme ■ Core material: ferrite ■ High current ratings Klimakategorie: Anschlüsse: Lötbarkeit:

B82791-G14-A17

Abstract: B82791-H15-A16 ferrite ring 22 B82793C0105N
Contextual Info: Drosseln für Daten- und Signalleitungen Chokes for Data and Signal Lines Bauformen für Oberflächenmontage Surface-mount types 1200 1000 800 UR VR 600 400 200 100 10 IR mA 1,0 LR (mH) 0,10 Merkmale Einsatzgebiete Features Applications 0,010 Bauform Type

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.