a1718
Abstract: KA1718 k a1718 A-1718 KA1718Y KTA1718L A1718Y KTA1718
Text: SEMICONDUCTOR KTA1718L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1718 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1718 KTA1718L 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :
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KTA1718L
A1718
a1718
KA1718
k a1718
A-1718
KA1718Y
KTA1718L
A1718Y
KTA1718
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a1703
Abstract: TO-126 KTA1703
Text: SEMICONDUCTOR KTA1703 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1703 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1703 KTA1703 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :
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KTA1703
O-126
A1703
a1703
TO-126
KTA1703
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a1700
Abstract: Ka1700 A1700 to-126 KTA1700
Text: SEMICONDUCTOR KTA1700 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1700 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1700 KTA1700 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :
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KTA1700
O-126
A1700
a1700
Ka1700
A1700 to-126
KTA1700
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a1704
Abstract: TO126 package TO126 KTA1704 TO-126
Text: SEMICONDUCTOR KTA1704 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1704 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1704 KTA1704 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :
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KTA1704
O-126
A1704
a1704
TO126 package
TO126
KTA1704
TO-126
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a1718
Abstract: KA1718 k a1718 KTA1718D A-1718 KA1718Y a1718y A17-18 hFE kec
Text: SEMICONDUCTOR KTA1718D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1718 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1718 KTA1718D 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :
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KTA1718D
A1718
a1718
KA1718
k a1718
KTA1718D
A-1718
KA1718Y
a1718y
A17-18
hFE kec
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A1725
Abstract: k a1725 KTA1725
Text: SEMICONDUCTOR KTA1725 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 A1725 O 3 2002. 7. 11 216 4 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1725 KTA1725 3 hFE Grade O R,O 4 Lot No.
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KTA1725
O-220IS
A1725
A1725
k a1725
KTA1725
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A1705
Abstract: transistor a1705 KA1705 KTA1705
Text: SEMICONDUCTOR KTA1705 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1705 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1705 KTA1705 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :
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KTA1705
O-126
A1705
A1705
transistor a1705
KA1705
KTA1705
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A1715
Abstract: TO126 package Ka1715 hFE kec KTA1715 TO-126
Text: SEMICONDUCTOR KTA1715 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1715 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1715 KTA1715 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009
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KTA1715
O-126
A1715
A1715
TO126 package
Ka1715
hFE kec
KTA1715
TO-126
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A1709
Abstract: TO126 package KTA1709 TO126
Text: SEMICONDUCTOR KTA1709 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1709 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1709 KTA1709 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009
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KTA1709
O-126
A1709
A1709
TO126 package
KTA1709
TO126
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MKK400-D-25-01
Abstract: B25667A4197A375 siemens 230 96 B25667-A4467-A3 MKK400-D-12 3x82 A2757 A4247 MKK415-D-20 MKK480-D-20-01
Text: Siemens Matsushita Components Phase Cap MKK-Capacitor B25667-A2157-A175 MKK230-I-2,5-01 Characteristics CN QN UN fN IN tanδ 0 Marking 1x150 µF +10/-5% 2.5 kvar AC 230 V 50 Hz 10.8 A 2 ⋅ 10-4 Maximum ratings Umax Imax îs du/dt max (du/dt)s 1.1 ⋅ UN (8 hours daily)
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B25667-A2157-A175
MKK230-I-2
1x150
-25/D
MKK400-D-25-01
B25667A4197A375
siemens 230 96
B25667-A4467-A3
MKK400-D-12
3x82
A2757
A4247
MKK415-D-20
MKK480-D-20-01
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Untitled
Abstract: No abstract text available
Text: PhaseCap B25667-A5217-A175 MKK525-I-18,6-01 Characteristics CN UN fN QN IN tan δ 0 1x 215 AC 525 50 18,6 1x 36 µF ±5 % V Hz 60 Hz kvar 22,3 kvar A 43 A Marking 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of
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B25667-A5217-A175
MKK525-I-18
6797-J13
439-BM12
C61014-A0508-A401
-40/D
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P6SBMJ24A
Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current
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A40CA
5SCMJ120CA
5SCMJ130CA
5SCMJ150CA
5SCMJ160CA
5SCMJ170CA
5SCMJ180CA
5SCMJ200CA
P6SBMJ24A
B17C
B14A
A17a
B14A equivalent
MARKING A19c
marking A32A
P4SSMJ24A
A12A
a32a
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DIN439
Abstract: No abstract text available
Text: Siemens Matsushita Components Phase Cap MKK-Capacitor B25667-A2157-A175 MKK230-I-2,5-01 Characteristics CN QN UN fN IN tanδ 0 Marking 1x150 µF +10/-5% 2.5 kvar AC 230 V 50 Hz 10.8 A 2 ⋅ 10-4 Maximum ratings Umax Imax îs du/dt max (du/dt)s 1.1 ⋅ UN (8 hours daily)
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B25667-A2157-A175
MKK230-I-2
1x150
-25/D
DIN439
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5800c
Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V
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TM5500/TM5800
TM5800-933
CoolRun80
5800C093310
TM5800-867
5800C086710
TM5800-800
5800A080010
TM5500-800
5800c
bios programmer
block diagram of crusoe processor
TM5500-800
chip morphing
TM5800 feature
sdr sdram pcb layout
TM5800
TM5800-733
TM5800-800
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B14A equivalent
Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse
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11ACE
TVSP05PT
OT-23
LTVSJ12ESPT
LTVSJ15ESPT
SC-79
B14A equivalent
zener b14a
P6SBMJ24A
B17C
tvs2315pt
TVSS5VESPT
diode B14A
B14A zener equivalent
A17a
P4SSMJ24A
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Untitled
Abstract: No abstract text available
Text: PhaseCap B25667-A5147-A175 MKK525-I-12,5-01 4RB5 125-5 AA 52 Characteristics CN UN fN QN IN tan δ 0 1x 144 AC 525 50 12,5 1x 24 µF ±5 % V Hz kvar A Marking 60 Hz 15 kvar 29 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of
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B25667-A5147-A175
MKK525-I-12
6797-J13
439-BM12
C61014-A0505-A401
-40/D
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kvar
Abstract: B25667-A2207-A175
Text: PhaseCap B25667-A2207-A175 MKK230-I-3,3-01 4RB5 033-5 AA 23 Characteristics CN UN fN QN IN tan δ 0 1x 200 AC 230 50 3,3 1x 15 µF ±5 % V Hz kvar A Marking 60 Hz 4 kvar 18 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of
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B25667-A2207-A175
MKK230-I-3
6797-J13
439-BM12
C61014-A0505-A401
kvar
B25667-A2207-A175
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Untitled
Abstract: No abstract text available
Text: PhaseCap B25667-A2317-A175 MKK230-I-5-01 4RB5 052-5 AA 23 Characteristics CN UN fN QN IN tan δ 0 1x 313 AC 230 50 5,2 1x 23 µF ±5 % V Hz kvar A Marking 60 Hz 6,2 kvar 28 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of
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B25667-A2317-A175
MKK230-I-5-01
6797-J13
439-BM12
C61014-A0505-A401
-40/D
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DIN IEC 249
Abstract: No abstract text available
Text: PhaseCap B25667-A3247-A175 MKK400-I-12,5-01 4RB5 125-5 AA 40 Characteristics CN UN fN QN IN tan δ 0 1x 249 AC 400 50 12,5 1x 31 µF ±5 % V Hz kvar A Marking 60 Hz 15 kvar 37 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of
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B25667-A3247-A175
MKK400-I-12
6797-J13
439-BM12
C61014-A0505-A401
-40/D
DIN IEC 249
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block diagram of crusoe processor
Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz
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TM55E/TM58E
TM58EX-933
58EXAE093321
TM58EL-800
58ELAD080021
TM55EL-667
55ELAC066721
TM55E/TM58E
block diagram of crusoe processor
bios programmer
SDR100
TM5800
TM58EL-800
crusoe
"sdr sdram" design guideline
TM58E
SDR100 sdram dimm
TM55EL-667
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hysf643
Abstract: No abstract text available
Text: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed
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HY62SF16403A
256Kx16bit
HYSF643A
100ns
120ns
hysf643
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HY628400ALLG-55
Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add
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HY628400A
512Kx8bit
HY628400A
HY628400ALLG-55
VDR 0047
HY628400ALG-55
hy628400allg
HY628400ALLG-I
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A1727
Abstract: A1727 transistor
Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for
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2SA1727F5
SC-63)
A1727
A/-10
2SA1727F5
A1727 transistor
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A1727 transistor
Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V
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2SA1727F5
SC-63)
A1727
A/-10
2SA1727F5
C1000
A1727 transistor
transistor C1000
J001
transistor a1727
c1000 transistor
2sa 102 transistor
D014B
2sa172
transistor 81 120 w 63
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