BCW61DR
Abstract: BCW61CR BCW61BR H12E BCW61AR K3024 BCW60 h22e BCW61A BCW61B
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC
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BCW61
BCW60
150oC
-10mA
-50mA,
BCW61DR
BCW61CR
BCW61BR
H12E
BCW61AR
K3024
BCW60
h22e
BCW61A
BCW61B
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sot 23 zwa
Abstract: SOT23 MARKING ZWA KN4403S zwa sot23 KN4402S zva 003 MARK CB SOT23 zwa Marking ZWA SOT-23 TRANSISTOR zwa
Text: SEMICONDUCTOR KN4402S/4403S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D ・Complementary to the KN4400S/4401S 3 H G A 2 1 Q P UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage
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KN4400S/4401S
KN4402S/4403S
Width300
140kHz
sot 23 zwa
SOT23 MARKING ZWA
KN4403S
zwa sot23
KN4402S
zva 003
MARK CB SOT23 zwa
Marking ZWA SOT-23
TRANSISTOR zwa
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sot 23 zwa
Abstract: MARK CB SOT23 zwa SOT23 MARKING ZWA KN4402S KN4403S
Text: SEMICONDUCTOR KN4402S/4403S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L H MAXIMUM RATING Ta=25ᴱ Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage
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KN4402S/4403S
140kHz
sot 23 zwa
MARK CB SOT23 zwa
SOT23 MARKING ZWA
KN4402S
KN4403S
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ZUA SOT23
Abstract: 4401S KN4400S KN4401S
Text: SEMICONDUCTOR KN4400S/4401S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L H MAXIMUM RATING Ta=25ᴱ Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage
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KN4400S/4401S
100kHz
ZUA SOT23
4401S
KN4400S
KN4401S
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Untitled
Abstract: No abstract text available
Text: ◆Externally Applied Reference Voltage Vref ◆Ceramic Capacitors Compatible ◆Input Voltage Range: 0.9V~10.0V ◆Oscillation Frequency: 300kHz, 100kHz (±15%) ◆PWM Control (XC9106) PWM/PFM Automatic Switching Control (XC9107) ◆SOT-25 / USP-6B Packages
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300kHz,
100kHz
XC9106)
XC9107)
OT-25
XC9106
100kHz.
XC9106/07
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Untitled
Abstract: No abstract text available
Text: ◆Externally Applied Reference Voltage Vref ◆Ceramic Capacitors Compatible ◆Input Voltage Range: 0.9V~10.0V ◆Oscillation Frequency: 300kHz, 100kHz (±15%) ◆PWM Control (XC9106) PWM/PFM Automatic Switching Control (XC9107) ◆SOT-25 / USP-6B Packages
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300kHz,
100kHz
XC9106)
XC9107)
OT-25
XC9106
100kHz.
XC9106/07
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Untitled
Abstract: No abstract text available
Text: ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current •APPLICATIONS :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A ●Cellular phones ●PDAs
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XC9110
XC9111
XC9110/9111
XC9111E331
XB01SB04A2BR
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diagram AMPLIFIER audio transistor
Abstract: No abstract text available
Text: XC9106/XC9107 Series ETR0405_002 PWM Control,PWM/PFM Switching Control, Step-Up DC/DC Converters, Externally Applied Vref ☆GreenOperation-Compatible •GENERAL DESCRIPTION The XC9106 / XC9107 series are step-up DC/DC controller ICs with an externally applied reference voltage Vref .
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XC9106/XC9107
ETR0405
XC9106
XC9107
diagram AMPLIFIER audio transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: XC9106/XC9107 Series ETR0405_002 PWM Control,PWM/PFM Switching Control, Step-Up DC/DC Converters, Externally Applied Vref ☆GO-Compatible •GENERAL DESCRIPTION The XC9106 / 07 series are step-up DC/DC controller ICs with an externally applied reference voltage Vref .
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XC9106/XC9107
ETR0405
XC9106
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Untitled
Abstract: No abstract text available
Text: This I cr Material Ln a tH Pro Electron Surface Mount Bipolar Devices continued t -1 UJ □ Copyrighted □ □ JE □ tn ru _□ Device No. (SOT-23 Mark) Case Style V CES * V CEO v CBO (V) (V) Min Min v *CES* V EBO (V) Min V CB (nA) Max (V) hfa c & & CE
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OT-23
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Untitled
Abstract: No abstract text available
Text: I t,S0113D Pro Electron Surface Mount Bipolar Devices Device No. SOT-23 Mark Case Style 0040554 VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min I * ' ces 'C B O (c o n tin u e d ) v h fe V CB <nA) Max (V) h fa Min @ Max 'c (m A ) & V CE(SAT) & V CE (v) Max
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S0113D
OT-23
BC859C
BC860C
O-236
BCP52
BCP53
O-261
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PDF
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bcp55 to
Abstract: bcp55 BCV72-K8 BC859C BC860C BCP52 BCP53 BCP54 BCP56 BCV26
Text: This I Material cr tn ab Pro Electron Surface Mount Bipolar Devices -1 fc-1 UJ CD Copyrighted a□ jr □ In nj -c: ru j] Device No. SOT-23 Mark I ' ces * 'CBO v h fe V CB (nA) Max (V) hfe Min @ Max 'c & VcE (mA) (v) V GE(SAT) & Max BE(SAT) . w V BE(ON)
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OCR Scan
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OT-23
BC859C
O-236
BC860C
BCP52
O-261
BCV26
BCV27
bcp55 to
bcp55
BCV72-K8
BC859C
BC860C
BCP53
BCP54
BCP56
BCV26
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PDF
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J03 SOT23
Abstract: BC 327 SOT 23 SO2894 2907 21E sot MARK T5 sot A2N transistor 2907 pnp transistor BC178A SO2906R
Text: A C T IV E COMPONENTS FO R H Y B R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S ë CB-166 SOT-23 Silicon PNP transistors, switching and general purpose , Mark ing Marq uage Type T ype N R * Pin co nf. Brochage Transistors PNP silicium usage général et commutation
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CB-166
OT-23)
BC178A
A2N2906A
J03 SOT23
BC 327 SOT 23
SO2894
2907
21E sot
MARK T5 sot
A2N transistor
2907 pnp transistor
BC178A
SO2906R
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PDF
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4392
Abstract: MARKING S04 transistor 4393 Transistor BFR 30 transistor ESM 30 MARK SO SOT
Text: A C T IV E COMPONENTS FOR H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IRC U ITS H Y B R ID E S i CB-166 SOT-23 N channel field effect transistors Transistors à effet de champ. canal N Type Type Mark mg Marq uege N BFR 30 M1 BFR 31 M2 R iu f V DS
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CB-166
OT-23)
4392
MARKING S04
transistor 4393
Transistor BFR 30
transistor ESM 30
MARK SO SOT
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BCW71
Abstract: BCV71 Scans-00124922 BCV72 BCW72 audio-amplifier BCW72/BCV72
Text: SEMICONDUCTOR TECHNICAL DATA BCV71/72 BCW71/72 EPITAXIAL PLANAR NPN TRANSISTOR LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING. FEATURES • Super Mini Packaged Transistor for Hybrid Circuits. • For Complementary with PNP Type BCW69/70/89. DIM MAXIMUM RATINGS Ta=25°C
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BCV71/72
BCW71/72
BCW69/70/89.
BCW71/72
BCV71/72
BCW71/BCV71
Ic-10JUA
BCW72/BCV72
BCW71
BCV71
Scans-00124922
BCV72
BCW72
audio-amplifier
BCW72/BCV72
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PDF
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sot 23 zwa
Abstract: KN4403S KN4402S zwa sot23 SOT23 MARKING ZWA
Text: SEMICONDUCTOR TECHNICAL DATA KN4402S/4403S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • Complementary to KN4400S/4401S. DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT 2.93+0.20 B 1 .3 0 + 0 .2 0 /—0.15
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OCR Scan
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KN4402S/4403S
KN4400S/4401S.
f-140kHz
sot 23 zwa
KN4403S
KN4402S
zwa sot23
SOT23 MARKING ZWA
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PDF
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sot-23 MARKING 25J
Abstract: sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222S KTN2222AS SOT-23
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=10nA M ax. ; V ce=60V, V eb <o f f )=3 V . • Low Saturation Voltage
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KTN2222S/AS
150mA,
KTN2907S/2907AS.
KTN2222S
KTN2222AS
10x8x0
sot-23 MARKING 25J
sot-23 25J
sot-23 MARK 25J
KTN2222AS
KTN2222AS SOT-23
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PDF
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BC807 kec
Abstract: BC807 BC807-16 BC807-25 BC817
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC807 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BC817. DIM A B C D E G H J K L M N P MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT
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BC807
BC817.
BC807 kec
BC807
BC807-16
BC807-25
BC817
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PDF
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BC849
Abstract: BC849B BC849C BC850 BC850B BC850C C420
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC849/850 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES DIM • For Complementary With PNP Type BC859/860. 2.93+0.20 B 1.30+0.20/-0.15 C MAXIMUM RATINGS Ta=25°C
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BC849/850
BC859/860.
BC849
BC850
10x8x0
100mA,
100MHz
BC849B
BC849C
BC850
BC850B
BC850C
C420
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PDF
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KTN2369AS
Abstract: KTN2369S HIGH SPEED SWITCHING NPN SOT23
Text: SEMICONDUCTOR TECHNICAL DATA K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX
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OCR Scan
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KTN2369S/AS
KTN2369AS
KTN2369S
100mA,
KTN2369AS
KTN2369S
HIGH SPEED SWITCHING NPN SOT23
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PDF
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BCV71
Abstract: BCW71 BCV72 BCW72
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BCV71/72 BCW71/72 EPITAXIAL PLANAR NPN TRANSISTOR LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING. FEATURES • Super Mini Packaged Transistor for Hybrid Circuits. • For Complementary with PNP Type BCW69/70/89.
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BCV71/72
BCW71/72
BCW69/70/89.
BCW71/72
BCV71/72
BCW71/BCV71
IC-10JUA
BCW72/BCV72
BCV71
BCW71
BCV72
BCW72
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PDF
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BCW89
Abstract: BCW69 ic 810 BCV71 BCW70
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO-LTD BCW69/70/89 EPITAXIAL PLANAR PNP TRA N SISTO R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Super Mini Packaged Transistors for Hybrid circuits. • For Complementary with NPN Type BCW71/72, BCV71.
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OCR Scan
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BCW69/70/89
BCW71/72,
BCV71.
BCW69/70
BCW89
BCW69/89
BCW70
BCW69/89
BCW89
BCW69
ic 810
BCV71
BCW70
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PDF
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BCW89
Abstract: BCW69 bcw69 transistor BCV71 BCW70
Text: SEMICONDUCTOR TECHNICAL DATA BCW69/70/89 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Super Mini Packaged Transistors for Hybrid circuits. • For Complementary with NPN Type BCW71/72, BCV71. MAXIMUM RATINGS Ta=25°C
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OCR Scan
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BCW69/70/89
BCW71/72,
BCV71.
BCW69/70
BCW89
BCW69/89
-10juA
BCW70
BCW89
BCW69
bcw69 transistor
BCV71
BCW70
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PDF
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Untitled
Abstract: No abstract text available
Text: » Discrete POWER & Sig n a l Technologies National S e m i c o n d u c t o r " ' _ V Device No. SOT-23 Mark C ase Style CES V * v v CEO CBO (V) M in „ _ _ _ , Pro E lectro n S u rfa c e M o u n t B ip o la r D ev ic es 1 / 1 CES v y ebo * 1 CBO (V) Min
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OCR Scan
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OT-23
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PDF
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