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    Panasonic Electronic Components MA6Z71800L

    DIODE ARR SCHOTT 30V 30MA SMINI6
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    DigiKey MA6Z71800L Reel 3,000
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    Bristol Electronics MA6Z71800L 501
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    Quest Components MA6Z71800L 400
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    MA6Z71800L 400
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    MA6Z71800L 77
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    MA6Z71800L 77
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    Panasonic Electronic Components MA6Z12100L

    DIODE ARRAY GP 80V 100MA SMINI6
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    DigiKey MA6Z12100L Reel 3,000
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    MA6Z Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA6Z121 Panasonic Silicon Epitaxial Planar Type Switching Diode Original PDF
    MA6Z121 Panasonic Silicon epitaxial planer type switching diode Original PDF
    MA6Z121 Panasonic Diode Original PDF
    MA6Z12100L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 80V 100MA SMINI6 Original PDF
    MA6Z718 Panasonic Silicon epitaxial planer type Schottky barrier diode Original PDF
    MA6Z718 Panasonic Diode Original PDF
    MA6Z718 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA6Z71800L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA SMINI6 Original PDF

    MA6Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 M Di ain sc te on na tin nc ue e/ d 1.25±0.1 2.1±0.1 • Features


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    PDF 2002/95/EC) MA6Z121 MA6S121)

    MA6S718

    Abstract: MA6Z718
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0 to 0.1 5˚ Symbol Rating


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    PDF 2002/95/EC) MA6Z718 MA6S718) MA6S718 MA6Z718

    MA6S718

    Abstract: MA6Z718
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification


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    PDF MA6Z718 MA6S718) MA6S718 MA6Z718

    MA6S121

    Abstract: MA6Z121
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 0.7±0.1 1.25±0.1 2.1±0.1 • Features • Three isolated elements contained in one package, allowing highdensity mounting


    Original
    PDF 2002/95/EC) MA6Z121 MA6S121) SC-88 MA6S121 MA6Z121

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing


    Original
    PDF 2002/95/EC) MA6Z718 MA6S718)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification


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    PDF MA6Z718 MA6S718)

    M2D Package

    Abstract: MA6S121 MA6Z121
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 5˚ Rating Unit Maximum peak reverse voltage


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    PDF 2002/95/EC) MA6Z121 MA6S121) SC-88 M2D Package MA6S121 MA6Z121

    MA6S121

    Abstract: MA6Z121
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 Reverse voltage Maximum peak reverse voltage


    Original
    PDF 2002/95/EC) MA6Z121 MA6S121) SC-88 MA6S121 MA6Z121

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing


    Original
    PDF 2002/95/EC) MA6Z718 MA6S718)

    MA6S718

    Abstract: MA6Z718
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Forward voltage VF , optimum for low voltage rectification


    Original
    PDF MA6Z718 MA6S718) MA6S718 MA6Z718

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features M Di ain sc te on na tin nc


    Original
    PDF 2002/95/EC) MA6Z718 MA6S718)

    MA6S718

    Abstract: MA6Z718
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 0 to 0.1 Symbol Rating


    Original
    PDF 2002/95/EC) MA6Z718 MA6S718) SC-88 MA6S718 MA6Z718

    MA6S718

    Abstract: MA6Z718
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type For switching circuits • Features 1 6 2 5 3 4 0.7 ± 0.1 0.2 ± 0.05 2.0 ± 0.1 0.65 0.65 • Small S-mini type 6-pin package • Non connected three elements incorporated in one package,


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    PDF MA6Z718 MA6S718) MA6S718 MA6Z718

    MA6S121

    Abstract: MA6Z121 M2D marking
    Text: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Small S-mini type 6-pin package • Three isolated elements contained in one package, allowing highdensity mounting


    Original
    PDF MA6Z121 MA6S121) MA6S121 MA6Z121 M2D marking

    MA6S121

    Abstract: MA6Z121
    Text: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.1 ± 0.1 1.25 ± 0.1 • Features Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 2 5 3 4 0.7 ± 0.1


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    PDF MA6Z121 MA6S121) MA6S121 MA6Z121

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


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    PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    k11 zener diode

    Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
    Text: Diodes Switching Diodes. K2 Switching Diodes . K2


    Original
    PDF MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3

    D83 ZENER

    Abstract: zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220
    Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 MA5Z200 Ir max. (M ) 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 216 MA5Z300 1 MA5Z330 1 Type No. Zener Diodes V z min. typ. (V) (V) Sz typ. (m V /t) Vr max. (V) lz lz (mA) (mA) 0.31 0.1 0.1 190 200 220 0.31


    OCR Scan
    PDF MA5Z200 MA5Z220 MA5Z240 MA52270 MA5Z300 MA5Z330 MA6Z100WA MA6Z100WK MA700/A MA704/A D83 ZENER zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan
    PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    Untitled

    Abstract: No abstract text available
    Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 Ir max. Vr (M ) (V) MA5Z200 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 MA5Z300 MA5Z330 Type No. ★Under development Zener Diodes V z Sz typ. (m V /t) min. (V) typ. (V) max. (V) 0.1 190 200 220 0.1 210 220 240


    OCR Scan
    PDF MA5Z200 MA5Z220 MA5Z240 MA52270 MA5Z300 MA5Z330 4S713* MA714 MA718Ã MA6S718