MA6S718
Abstract: MA6Z718
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0 to 0.1 5˚ Symbol Rating
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2002/95/EC)
MA6Z718
MA6S718)
MA6S718
MA6Z718
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MA6S718
Abstract: MA6Z718
Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification
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MA6Z718
MA6S718)
MA6S718
MA6Z718
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing
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2002/95/EC)
MA6Z718
MA6S718)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification
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MA6Z718
MA6S718)
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MA6S718
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA6S718 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.1 0.65 0.65 • Features 6 2 5 3 4 0.7 ± 0.1 0.2 ± 0.05 • Small S-mini type 6-pin package • Non connected three elements incorporated in one package,
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MA6S718
N-50BU
PG-10N)
SAS-8130)
MA6S718
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing
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2002/95/EC)
MA6Z718
MA6S718)
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6pin rl
Abstract: "Switching diode" 6pin F MARKING 6PIN Switching diode 6pin marking 6pin
Text: MA111 Schottky Barrier Diodes SBD MA6S718 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 1.25±0.1 ● Small S-Mini 6-pin package ● Independent three-element incorporated, enabling high density mount- 2.0±0.1 0.65 0.65 • Features
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MA111
MA6S718
30MHz
2000MHz
N-50BU
PG-10N
SAS-8130
6pin rl
"Switching diode" 6pin
F MARKING 6PIN
Switching diode 6pin
marking 6pin
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MA6S718
Abstract: MA6Z718
Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Forward voltage VF , optimum for low voltage rectification
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MA6Z718
MA6S718)
MA6S718
MA6Z718
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features M Di ain sc te on na tin nc
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2002/95/EC)
MA6Z718
MA6S718)
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MA6S718
Abstract: MA6Z718
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 0 to 0.1 Symbol Rating
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2002/95/EC)
MA6Z718
MA6S718)
SC-88
MA6S718
MA6Z718
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MA6S718
Abstract: MA6Z718
Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type For switching circuits • Features 1 6 2 5 3 4 0.7 ± 0.1 0.2 ± 0.05 2.0 ± 0.1 0.65 0.65 • Small S-mini type 6-pin package • Non connected three elements incorporated in one package,
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MA6Z718
MA6S718)
MA6S718
MA6Z718
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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D83 ZENER
Abstract: zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220
Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 MA5Z200 Ir max. (M ) 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 216 MA5Z300 1 MA5Z330 1 Type No. Zener Diodes V z min. typ. (V) (V) Sz typ. (m V /t) Vr max. (V) lz lz (mA) (mA) 0.31 0.1 0.1 190 200 220 0.31
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MA5Z200
MA5Z220
MA5Z240
MA52270
MA5Z300
MA5Z330
MA6Z100WA
MA6Z100WK
MA700/A
MA704/A
D83 ZENER
zener d83
ma5z270
ma741
D83 004
MA776
MA6Z100WA
MA6Z
DIL 330
ma5z220
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1SS309
Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)
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1SS309
MA122
MA123
30MAX
ES1100
DAN-10
DAN401
DAN403
DAN601
DAN801
DAN802
DAN803
DAP401
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1SS309
Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
Text: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35
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1SS309
MA123
E1388
11MIN
-16UNF'
48MAX
DAN-10
DAN401
DAN403
DAN601
DAN801
DAN802
DAN803
DAP401
DA6PC
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628B
Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)
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1SS309
IMP11
DAP202Kia
LB1105M
MA6S121
MA6S718
100MHz)
MA122
MA123
628B
DAN-10
DAN401
DAN403
DAN601
DAN801
DAN802
DAN803
DAP401
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Untitled
Abstract: No abstract text available
Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 Ir max. Vr (M ) (V) MA5Z200 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 MA5Z300 MA5Z330 Type No. ★Under development Zener Diodes V z Sz typ. (m V /t) min. (V) typ. (V) max. (V) 0.1 190 200 220 0.1 210 220 240
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MA5Z200
MA5Z220
MA5Z240
MA52270
MA5Z300
MA5Z330
4S713*
MA714
MA718Ã
MA6S718
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1SS309
Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 m5x0.8
Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)
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1SS309
MA123
60MAX-
22MAX
HI246
DAN-10
DAN401
DAN403
DAN601
DAN801
DAN802
DAN803
DAP401
m5x0.8
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PC802
Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803
Text: 1 74 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) 80 80 300 300 85 85 35 35 35 fe aï V r rm Io ,If* I fm <°C) (nA) I fsm cc> (A) Vpmax IR'JWl m * iS Æ ism tÉ (WJAfc I Rmax fk ñ (V) I F <mA) ( ß A) V f (V) <°C)
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1SS309
MA6S121
MA6S718
100MHz)
MA122
MA123
PC802
DAP803
DAN-10
DAN401
DAN403
DAN601
DAN801
DAN802
DAN803
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DAP801
Abstract: DA-6NC DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802
Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' * s * y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)
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1SS309
25MAX
24MIN
25M1N
25MIN
51IAX
12MIN
DAP801
DA-6NC
DAP803
DAN-10
DAN401
DAN403
DAN601
DAN801
DAN802
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DA-4P
Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Text: 174 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m * iSÆismtÉ (WJAfc I Rmax fk ñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)
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OCR Scan
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1SS309
MA122
MA123
EI494
DA-4P
DAN-10
DAN401
DAN403
DAN601
DAN801
DAN802
DAN803
DAP401
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