MTP3N60 Search Results

Contextual Info: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

mtp3n6

Abstract: mosfet 600V 30A
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP3N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP3N60

Abstract: MTP3N6 MTP3N60FI
Contextual Info: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

mtp3n6

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI VDSS RDS(on) ID 600 V 600 V < 2.5Q < 2.5 Q. 3.9 A

Contextual Info: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM3N60 MTP3N55 MTP3N60 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS TMOS POWER FETs 3 AMPERES 'DS(on) = 2.5 OHMS

2N3904

Abstract: AN569 MTP3N60E
Contextual Info: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS

TP3N55

Contextual Info: M O T O RO LA SC XSTRS/R F m e I .0 t.3 t,7 E S 4 0 0 0 ^ 7 0 Ö I MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S POWER FETs

mtp3n6

Contextual Info: MTP3N60E Designer’s Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast

MTP3N60FI

Contextual Info: ^ 7 SGS-THOMSON MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE Voss ^OS on •d MTP3N60 MTP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VOLTAGE FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR

MTP3N6

Contextual Info: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS

MTP3N60

Abstract: MTP3N60FI MTP3N6
Contextual Info: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: * 5 SGS-THOMSON ilLiCTIKMDe 7 mTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V M TP3N60 M TP3N60FI • . . ■ ■ dss 600 V 600 V R DS on Id < 2.5 a < 2.5 a 3.9 A 2.5 A TYPICAL RDS(on) = 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

MTP3N6

Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS

Contextual Info: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N 60E T M O S E -F E T ™ High Energy Pow er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to

MTM3N60

Abstract: MTP3N55 p3nb 221A-04 25CC AN569 MTP3N60
Contextual Info: MOTOROLA SEM ICON D UCTO R TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancem ent-M ode Silico n Gate TM OS TM OS POWER FETs 3 AM PERES T h e se T M O S Po w er F E T s are designed for high vo ltage, high

mtp3n

Abstract: TP3N60 A1412
Contextual Info: Si TYPE . MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss MTP3N60 MTP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

1N4007 diode PIV rating

Abstract: NPC1200 AND8023 NCP1200 CROSS REFERENCE NPC-1200 NPC1200 equivalent footprint for transformer in orcad trouble shorting top switch 250 smps MBRA140LT3 EGSTON C 44
Contextual Info: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor Avenue Eisenhower, BP1056, 31023 TOULOUSE Cedex France 33 0 5 61 19 90 12 e–mail: christophe.basso@onsemi.com The NCP1200 implements a standard current mode

NPC-1200

Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
Contextual Info: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5