M51C Search Results

Contextual Info: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz

Contextual Info: iny M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM M ilitary M51C259HL-15 M51C259HL-20 150 200 Maximum Access Time ns Maximum Column Address Access Time (ns) 70 90 Maximum C H M O S Standby Current (mA) 0.1 0.1 Low Input/Output Capacitance

Contextual Info: Triple-Balanced Mixer M51/M51C V3 Features • • • • • Product Image LO 2 TO 24 GHz RF 2 TO 24 GHz IF 1 TO 15 GHz LO DRIVE: +10 dBm NOMINAL HIGH COMPRESSION POINT Description The M51 is a triple balanced mixer, designed for use in military, commercial and test equipment applications. The design utilizes

Contextual Info: in U T M51C64HL HIGH PERFORMANCE LOW POWER RIPPLEMODETM 64K x 1 CHMOS DYNAMIC RAM Military M51C64HL-12 120 Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHMOS Standby Current (mA) 65 0.05 R ip p le m o d e T M Operation — Continuous Data Rate over 13 MHz

270033

Abstract: Teac A 3440 M51C64HL M51C64HL-12 M51C64HL-15
Contextual Info: in U T M51C64HL HIGH PERFORMANCE LOW POWER RIPPLEMODE tm 64K x 1 CHMOS DYNAMIC RAM Military M51C64HL-12 M51C64HL-15 150 75 0.05 120 Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHMOS Standby Current (mA) 65 0.05 m RipplemodeTM Operation

M51C259HL

Abstract: M51C259HL-15 M51C259HL-20
Contextual Info: in te T M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM M ilitary M51C259HL-15 M51C259HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Static Column Mode Operation

my51

Abstract: y51c
Contextual Info: uuU M51/M51C MY51/MY51C TRIPLE-BALANCED MIXER ♦ LO 2.0 TO 24.0 GHz ♦ RF 2.0 TO 24.0 GHz ♦ IF 1.0 TO 15.0 GHz ♦ LO DRIVE +10 dBm NOMINAL ♦ VERY WIDE BANDWIDTH ♦ HIGH COMPRESSION POINT ♦ MIL-M -28837 EQUIVALENT LEVEL SCREENING AVAILABLE Outline Drawings

Contextual Info: M51/M51C TRIPLE-BALANCED MIXER • LO 2 TO 24 GHz · RF 2 TO 24 GHz · IF 1 TO 15 GHz · LO DRIVE: +10 dBm NOMINAL · HIGH COMPRESSION POINT Specifications (Rev. Date: 6/02)* Characteristics Typical SSB Conversion Loss & SSB Noise Figure (max.) fR = 2.5 to 18 GHz, fL = 2 to 18 GHz,

271047

Abstract: M51C68
Contextual Info: intel1 M51C68 HIGH-SPEED CHMOS 4096 x 4-BIT STATIC RAM Military M51C68-35 35 100 10 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) M51C68-45 M51C68-55 M51C68-70 45 100 10 55 100 10 70 100 10 Double Metal CHMOS III Technology High Density 20-Pin Package

M51C67

Contextual Info: intJ ^ M51C67 HIGH-SPEED CHMOS 16,384 x 1 BIT STATIC RAM Military Max Access Time ns Max Active Current (mA) -4 5 M51C67-35 35 100 10 Max Standby Current (mA) -5 5 55 45 100 100 10 10 Double Metal CHMOS III Technology • High Density 20-Pin Package Completely Static Memory-No Clock

M51C

Contextual Info: M51 / M51C Triple-Balanced Mixer Rev. V3 Features • • • • • Product Image LO 2 TO 24 GHz RF 2 TO 24 GHz IF 1 TO 15 GHz LO DRIVE: +10 dBm NOMINAL HIGH COMPRESSION POINT Description The M51 is a triple balanced mixer, designed for use in military,

271004

Abstract: M51C256H M51C256H-15 M51C256H-20
Contextual Info: P ftüO M D B O Â IS W in t e f M51C256H HIGH PERFO RM ANCE RIPPLEMODETm 256K CHM OS D YN A M IC RAM x 1 M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High R e lia b ility C e ra m ic— 16 Pin DIP

Contextual Info: in t e i M51C64HL HIGH PERFORMANCE LOW POWER RIPPLEMODE tm 64K x 1 CHMOS DYNAMIC RAM M ilita ry M51C64HL-12 M51C64HL-15 Maximum Access Time ns 120 150 Maximum Column Address Access Time (ns) 65 75 0.05 0.05 Maximum CHMOS Standby Current (mA) RipplemodeTM Operation

270190

Contextual Info: intei M51C98 HIGH-SPEED CHMOS 16,384 x 4-BIT STATIC RAM M ilita ry • 35 ns Max Access Time ■ 60 mA Typical Operating Current ■ 5 mA Typical Standby Current Static Operation — No Clock/Refresh Required Power Down Mode Equal Access and Cycle Times — Simplifies System Design

Contextual Info: irrteT ADWAN ! OMIFÜKßMTTOOM M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Military Maximum Access Time ns) M51C259HL-15 M51C259HL-20 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA)

271004

Contextual Info: in t e T M51C256H HIGH PERFORMANCE RIPPLEMODETM 256K x 1 CHMOS DYNAMIC RAM Military M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 m RIpplemodeTM Operation • High Reliability Ceramic—16 Pin DIP ■ Fast “Usable Speed”

M51C259HL

Abstract: M51C259HL-15 M51C259HL-20
Contextual Info: inteT M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Military M 5 1 C 2 5 9 H L-1 5 M 5 1C 2 5 9 H L-2 0 M aximum A c c e s s T im e ns 150 200 M aximum C olum n A d d re ss A c c e s s Tim e (ns) 70 90 M aximum C H M O S Standby Current (mA)

laf 001

Abstract: 20 led VU meter M51C256H M51C256H-15 M51C256H-20 271004
Contextual Info: intet M51C256H HIGH PERFORMANCE RIPPLEMODEtm 256K CHMOS DYNAMIC RAM x 1 Military M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 RIpplem odeTM O p e ra tio n High Reliability Ceramic—16 Pin DIP Fast “Usable Speed”

25CC

Abstract: M51C64HL M51C64HL-12 M51C64HL-15
Contextual Info: in t e i M51C64HL HIGH PERFORMANCE LOW POWER RIPPLEMODETm 64K x 1 CHMOS DYNAMIC RAM Military Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHMOS Standby Current (mA) M51C64HL-12 M51C64HL-15 1 2 0 150 65 75 0.05 0.05 R i p p l e m o d e T M Operation

freertos

Abstract: 51CN128 MCF51CN128 51CN M51CN128RD lwIP an3930 FAT16 MCF51CN SMTP
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3930 Rev. 0, 09/2009 Email Client Using MCF51CN Family and FreeRTOS by: Paolo Alcantara Applications Engineering RTAC Americas 1 Introduction This document describes an email client using the MCF51CN128, the open source RTOS FreeRTOS

freertos

Abstract: 51CN128 lwIP USB ethernet bridge FAT16 MCF51CN MCF51CN128
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3906 Rev. 0, 06/2009 Serial-to-Ethernet Bridge Using MCF51CN Family and FreeRTOS by: Paolo Alcantara RTAC Americas Mexico 2009 1 1.1 Overview Purpose This document describes a serial-to-Ethernet bridge

EC75

Abstract: EM400XG N81-A90X ET600X ET90X N80-A230X EM350X T30-A230X A83C90 EM90X
Contextual Info: 2002katalog4.qxd 9/17/2002 3:04 PM Page 80 80 ГАЗОНАПОЛНЕННЫЕ РАЗРЯДНИКИ устройства защиты, предохранители СИСТЕМА ОБОЗНАЧЕНИЙ Используется для защиты телекоммуникационных устройств АТС, офисных АТС, оконечных

M51-C90XG

Contextual Info: Surge arrester 2-electrode arrester Series/Type: Ordering code: M51-C90XG B88069X5020T103 Version/Date: Version: Issue 06 / 2007-10-10 01 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei