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    M27W160 Search Results

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    M27W160

    Abstract: PDIP42 Q15A
    Text: M27W160 16 Mbit x8/x16 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST ACCESS TIME: – 100ns at VCC = 3.0V to 3.6V – 120ns at VCC = 2.7V to 3.6V BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT


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    PDF M27W160 x8/x16) 100ns 120ns 50sec. 0020h 00B1h FDIP42W PDIP42 M27W160 PDIP42 Q15A

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


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    PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


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    PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    M27C160

    Abstract: M27V160 M27W160 Q15A
    Text: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz


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    PDF M27V160 110ns 50sec. M27C160 0020h 00B1h M27V160 M27W160 FDIP42W M27C160 M27W160 Q15A

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


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    PDF BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860

    PJ 1179

    Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
    Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a


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    PDF

    M27C160

    Abstract: M27V160 M27W160 Q15A
    Text: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION 44 42 – Active Current 70mA at 8MHz


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    PDF M27V160 110ns 50sec. FDIP42W M27C160 0020h 00B1h M27V160 M27W160 M27C160 M27W160 Q15A

    M93C46BN1

    Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA


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    PDF M2716-1F1 M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-3F1 M2764A-1F1 M2764A-20F1 M93C46BN1 PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7

    Untitled

    Abstract: No abstract text available
    Text: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE


    OCR Scan
    PDF M27V160 110ns FDIP42W 50sec. M27C160 0020h M27V160is M27W160 M27V160

    27C 0626

    Abstract: No abstract text available
    Text: £ÿj SGS-THOMSON D ii©l[LI ê,in^@lü!lD(gi M 27W 160 16 Mbit (x8/x16 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 100ns at Vcc = 3.0V to 3.6V - 120ns at Vcc = 2.7V to 3.6V ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE


    OCR Scan
    PDF x8/x16) 100ns 120ns 50sec. 0020h 00B1h M27W160 M27W160 27C 0626

    M27V160

    Abstract: M27W160 M27C160
    Text: . SGS-THOMSON M27V160 k7 # . RfilDÊlMSJlilUKg'inEORODtgi 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM N O T F O R N E W D E S IG N • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE


    OCR Scan
    PDF M27V160 110ns 50sec. M27C160 0020h M27V160 M27W160 M27W160 M27C160