M2012 RESISTOR Search Results

EL2012

Abstract: 2SC101 M2012 resistor elantec el2012 p0028c M2012 NPN Transistor isolated T0-220
Contextual Info: EL2012 F eatu res G eneral D escrip tion • 80 M Hz bandw idth w ith 50il load • 250 mA output current • Gain = 0.999 4- with 50ft load • VOS ± 4 m V • Short circuit protected • Power package w ith isolated metal tab The EL2012 is a high speed bipolar monolithic buffer designed

Contextual Info: EL2012 5 AE D é ia n ie t H B H PERFORMANCE ANAUQG INTEGRATED CtRCtttTS Features • 80 MHz bandwidth with 50fl load • 250 mA output current • Gain = 0.999 + with 500 load • V 0s ± 4m V • Short circuit protected • Power package with isolated metal tab

AT070

Abstract: M2019 m2023 switch M2012 M2013 M2015 M2018 M2012 6A 125V SP-M20-24
Contextual Info: Miniature Rockers Series M Distinctive Characteristics Three methods of panel mounting: flat frame for flush with face or subpanel, snap-in, and PCB. High insulating barriers increase isolation of circuits in multipole devices and provide added protection to contact points.

M2013

Abstract: M2012 6A 125V M2012 M2015 M2018 M2019 M2022 m2023 switch M2019 6A 125V
Contextual Info: Miniature Rockers Series M Distinctive Characteristics Three methods of panel mounting: flat frame for flush with face or subpanel, snap-in, and PCB. High insulating barriers increase isolation of circuits in multipole devices and provide added protection to contact points.

Contextual Info: Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers Toggles Series M Miniature Rockers General Specifications B Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits

MARK B83

Abstract: M2026 M2012 6A 125V
Contextual Info: Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers Toggles Series M Miniature Rockers General Specifications B Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits

Contextual Info: Miniature Rockers General Specifications Electrical Capacity Resistive Load Power Level (silver): Logic Level (gold): Logic/Power Level (gold over silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits 0.4VA maximum @ 28V AC/DC maximum

883ct

Contextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through

honeywell mram

Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out

Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible

Contextual Info: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

HC6264

Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical

chip diagram of ram chip 6116

Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

x-ray cmos

Contextual Info: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator

KD 2.d smd transistor

Contextual Info: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V

Contextual Info: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)

spw 068

Abstract: MP 1009 es IT8513 CLEVO L390T IT8513E power supply spw 068 SPW 078 adp 65 jh ac adapter schematic inverter wait
Contextual Info: Preface LCD Computer L390T Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They