LTE4002S Search Results

LTE4002S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LTE4002S		Philips Semiconductors	Microwave Linear Power Transistor		Original	PDF

LTE4002S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: LTE4002S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)90m Absolute Max. Power Diss. (W)1.0¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	PDF	LTE4002S
lte4002s Abstract: 005129 industrial linear ic Text: D EVELO PM EN T DATA LTE4002S T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject t o c hange w it h o u t notice. PHILIPS INTERNAT ION AL SbE ]> • 711DflEb 004b514 SIS PHIN M IC R O W A V E LINEAR PO W ER T R A N SIST O R	OCR Scan	PDF	LTE4002S 711DflSb 004bS14 lte4002s 005129 industrial linear ic
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE • ObE D ■ bbSBIBl O D m T S B b ■ DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J ■ - _ 11 LTE4002S - -r — - ~ •	OCR Scan	PDF	LTE4002S
LTE4002S Abstract: 4002S transistor 417 269 Text: •^3 D E V ELO P M EN T DATA LTE4002S This data sheet contains advance information and specifications are subject to change w ithout notice. PHILIPS INTERNATIONAL 3 -0 5 SbE » ■ 711üfl2b 004b214 212 PHIN M ICROW AVE LINEAR POW ER TRANSISTOR NPN silicon transistor for use in common-emitterclass-A linear amplifiers up to 4 GHz.	OCR Scan	PDF	LTE4002S 711DflSb 004bE14 LTE4002S 4002S transistor 417 269
lte4002s Abstract: D 1398 Transistor Text: 1 N AMER PHILIPS/DISCRETE • ObE D DEVELO PM ENT DATA bb53131 ODlMTSa b ■ LTE4002S T his data sheet contains advance information and specifications are subject to change w ithout notice. ! 3 M IC R O W A V E LINEAR P O W ER T R A N S IS T O R N-P-N silicon transistor for use in common-emitter class-A linear amplifiers up to 4 G H Z.	OCR Scan	PDF	bb53131 LTE4002S LTE4002S T-31-23 D 1398 Transistor
Untitled Abstract: No abstract text available Text: LTE4002S Maintenance type - not for new designs J _ MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emi ter class-A linear amplifiers up :o 4 GHz. Diffused em itter ballasting resistors, self aligni d process entirely ion implantec end gold sandwich	OCR Scan	PDF	LTE4002S F0-41B.
FO-229 Abstract: No abstract text available Text: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V\| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18	OCR Scan	PDF	E4001R LTE4002S LTE42005S LTE42008R LTE42012R T-100 FO-41B FO-229
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	PDF	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
bf0262a Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A	OCR Scan	PDF	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
LTE-3201 Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S Text: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S	OCR Scan	PDF	bS3T31 D01fc 6000Q OT-100 LBE2003S FO-45 LCE2003S FO-46 LBE2009S LTE-3201 FO-163 lte4002s LCE2009S LTE21009R LUE2009S
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S	OCR Scan	PDF	btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45