LN59
Abstract: LN59L LNA2702L
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 1.0 15.3±1.0 0.8 max. 0.5±0.1 0.5±0.1 2 1 2.54 C0.5 • Absolute Maximum Ratings Ta = 25°C Forward current IF 50 mA Pulse forward current * IFP 1 A
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LNA2702L
LN59L)
LN59
LN59L
LNA2702L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 2-R1.25±0.1 1.0 2-0.8 max. M Di ain sc te on na tin nc ue e/ d 15.3±1.0 • Two-way directivity • High-power output, high-efficiency: PO = 1.8 mW (min.)
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LNA2702L
LN59L)
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1% V 50 mA 1 A 75 mW −25 to +85 °C −40 to +100
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LNA2702L
LN59L)
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Infrared Emitting Diode
Abstract: LN59 LN59L
Text: Panasonic Infrared Light Emitting Diodes LN59, LN59L G aAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • Two-way directivity • H igh-pow er output, high-efficiency : P Q = 1.8 mW (min.) • Small resin package
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LN59L
LN59L)
Infrared Emitting Diode
LN59
LN59L
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LN59
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 0.5±0.1 0.5±0.1 2 1 2.54 C0.5 • Absolute Maximum Ratings Ta = 25°C Forward current IF 50 mA Pulse forward current * IFP 1 A Power dissipation PD 75
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LNA2702L
LN59L)
LN59
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po102
Abstract: LN59 LNA2702L
Text: Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR VHS System 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)
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LNA2702L
LNA2702L)
100Hz
po102
LN59
LNA2702L
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LN59
Abstract: LN59L LNA2702L photo sensor
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR (VHS System) 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)
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LNA2702L
LN59L)
LNA2702L)
LN59
LN59L
LNA2702L
photo sensor
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN59, LN59L G aAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package
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LN59L
LN59L)
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LN59L
Abstract: LN59 LNA2702L
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 2-0.5±0.1 0.5±0.1 2 1 2.54 C0.5 • Absolute Maximum Ratings Ta = 25°C mA Pulse forward current * IFP 1 A Power dissipation PD 75 mW Operating ambient temperature
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LNA2702L
LN59L)
LSTLR102-004
LN59L
LN59
LNA2702L
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN59, LN59L GaAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package
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LN59L
LN59L)
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PDF
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 2-R1.25±0.1 1.0 0.8 max. M Di ain sc te on na tin nc ue e/ d 15.3±1.0 • Two-way directivity • High-power output, high-efficiency: PO = 1.8 mW (min.)
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LNA2702L
LN59L)
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LN159
Abstract: LN59 LNA2701L
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° M Di ain sc te on na tin nc ue e/ d 8° 0.5 max. 8° 8° 0.8 8° 2.4±0.2 2-R0.7 1.0 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature
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LNA2701L
LN159)
LN159
LN59
LNA2701L
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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LNC703PS
Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ
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LN124W
P5F02-1
PSF02-1
LN155
LN184
LN189L
PR002-1
PR002-2
LNC703PS
LN9P01S
P50024
LNA4401
PR0022
LN68
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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sr 100/25
Abstract: LN159 LN59 LNA2701L
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 2.8±0.2 8° 1.3±0.2 8° 0.8 φ1.4±0.2 Pulse forward current * Power dissipation Operating ambient temperature Storage temperature
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LNA2701L
LN159)
sr 100/25
LN159
LN59
LNA2701L
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LT3SA
Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LT3SA
LN9705S
LN7301F
P700
P3002.2
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LN9705
Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LN9705
C3021
mr02
LN9705S
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN159 GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package
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LN159
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%
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LNA2701L
LN159)
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LN159
Abstract: LN59 LNA2701L
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Bi-directional Infrared Light Emitting Diode Unit : mm 8˚ 8˚ 26 26 .5 ˚ For light source of VCR (VHS System) .5˚ 0.5 max. Two-way directivity 2.8±0.2 2-C0.5 8˚ ø1.4±0.2 2-R0.7 1.0 Light source for tape end sensor of VCR and video camera
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LNA2701L
LN159)
LN159
LN59
LNA2701L
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PR002-2
Abstract: mru2 PR0022
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)
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Plastic50
P5002-1
P5002-Ì
P5002-1N
P5002-2
P3002-1
P3002-2
P5002-4
PR002-2
mru2
PR0022
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