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    United Chemi-Con Inc E36D500HLN683MD79M

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    United Chemi-Con Inc E36D800HLN683MEB7M

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    United Chemi-Con Inc E32D800HLN682MA79M

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    United Chemi-Con Inc E37L401HLN682MEE3U

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    Master Electronics E37L401HLN682MEE3U
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    United Chemi-Con Inc E36D350HLN683TC79M

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    LN68 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LN68 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN68 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN68 Panasonic Light Emitting Diodes Scan PDF
    LN68 Panasonic Light Emitting Diodes LED Scan PDF
    LN68 Panasonic Light Emitting Diodes LED Scan PDF

    LN68 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LN68

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN68 G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)


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    0102Q. PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)


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    PDF

    LN68

    Abstract: LNA2802L
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2802L (LN68) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors


    Original
    2002/95/EC) LNA2802L LN68 LNA2802L PDF

    an7060

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2802L (LN68) GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea


    Original
    2002/95/EC) LNA2802L an7060 PDF

    LN68

    Abstract: LNA2802L
    Text: Infrared Light Emitting Diodes LNA2802L LN68 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm φ3.0±0.2 4.5±0.3 5.0±0.2 15.0±1.0 • High-power output, high-efficiency: PO = 5 mW (typ.) • Emitted light spectrum suited for silicon photodetectors


    Original
    LNA2802L LN68 LNA2802L PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN68 G aAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light em itting spectrum suited for silicon photodetectors : A,P = 950 nm (typ.)


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    PDF

    LN68

    Abstract: LNA2802L po102
    Text: Infrared Light Emitting Diodes LNA2802L LN68 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current


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    LNA2802L LN68 LNA2802L po102 PDF

    LNC703PS

    Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ


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    LN124W P5F02-1 PSF02-1 LN155 LN184 LN189L PR002-1 PR002-2 LNC703PS LN9P01S P50024 LNA4401 PR0022 LN68 PDF

    LT3SA

    Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40


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    LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LT3SA LN9705S LN7301F P700 P3002.2 PDF

    LN9705

    Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1


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    LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LN9705 C3021 mr02 LN9705S PDF

    Untitled

    Abstract: No abstract text available
    Text: NEWBRIDGE MICROSYSTEMS E5E D • bSSSlOl 0000140 1 ■ CA424 DC-DC CONVERTER T-51-H ■ The CA424 Is a low power, high efficiency dc-dc Converter, it can operate from single battery cell voltages as low as 0.9 volts. Only five external componentsare required.


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    CA424 250mA 600mA T-51-H CA424 -CA424 PDF

    PR002-2

    Abstract: mru2 PR0022
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)


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    Plastic50 P5002-1 P5002-Ì P5002-1N P5002-2 P3002-1 P3002-2 P5002-4 PR002-2 mru2 PR0022 PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    B029A

    Abstract: UN039
    Text: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005


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    LN7301M005 122WS LN122WF LN184 LN189L LN9860/P/PR LN189M LN189S LN671 LN51L B029A UN039 PDF

    Untitled

    Abstract: No abstract text available
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli­ Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2


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    LN143 LN122WS LN122WF LN124W LN145W T0-18 MR02-1 MF02-1 P5F02-2 PDF