12MRH00191A
Abstract: MOTOROLA DATE CODE MARKING motorola marking MC68360CRC25C MC68360RC25C MC68EN360RC33C MC68302CRC20C semiconductor body marking Marking Code JB MC68360RC33K
Text: MOTOROLA Semiconductor Products Sector Issuing Division: NETWORKING & COMMUNICATION SYSTEMS NN PRODUCT BULLETIN Customer Copy - Emailed Direct 01-DEC-2000 NAME: MARTIN RIES, SALES REPRESENTATIVE EMAIL ADDRESS: TTG472@email.sps.mot.com Attn: EBV EUROPE Subject: MOTOROLA PRODUCT BULLETIN 6116
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01-DEC-2000
TTG472
MC68360RC/68302RC
02-Dec-2000
MC68302CRC16C
MC68302CRC20C
MC68302RC16C
MC68302RC20C
MC68302RC25C
MC68EN360CRC25C
12MRH00191A
MOTOROLA DATE CODE MARKING
motorola marking
MC68360CRC25C
MC68360RC25C
MC68EN360RC33C
MC68302CRC20C
semiconductor body marking
Marking Code JB
MC68360RC33K
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SoG adaptor
Abstract: KS88C6116 44-QFP KS88C6108 ks88c6116 6 instruction set
Text: Product Overview Address Spaces Addressing Modes Control Registers Interrupt Structure Instruction Set KS88C6108/C6116/P6116 MICROCONTROLLERS 1 PRODUCT OVERVIEW PRODUCT OVERVIEW SAM8 PRODUCT FAMILY Samsung's SAM8 family of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range
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KS88C6108/C6116/P6116
40-Pin
TB886108A/6116A
42-SDIP
AP42SD-G
SM6520
TB886108A/6116A
KS88C6108/C6116/P6116)
SoG adaptor
KS88C6116
44-QFP
KS88C6108
ks88c6116 6 instruction set
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FX2N-32MR
Abstract: d8145 FX2N-2DA FX1S-20MR-DS FX2N-4DA d2499 S20 K50 mitsubishi fx2n 32mr K791 D8157
Text: MITSUBISHI ELECTRIC Ñåðèÿ ÏÊ ìîäåëè MELSEC FX ÏÐÎÃÐÀÌÌÈÐÓÅÌÛÉ ÊÎÍÒÐÎËËÅÐ FX1S, FX1N, FX2N, FX2NC Êàò.¹: 154315 250204 âåðñèÿ A MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Ê ÝÒÎÌÓ ÐÓÊÎÂÎÄÑÒÂÓ Òåêñòû, ðèñóíêè, äèàãðàììû è ïðèìåðû, íàõîäÿùèåñÿ â ýòîì ðóêîâîäñòâå,
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D-40880
FX2N-32MR
d8145
FX2N-2DA
FX1S-20MR-DS
FX2N-4DA
d2499
S20 K50
mitsubishi fx2n 32mr
K791
D8157
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pin diagram of ic 6116
Abstract: b5 SMD zener diode aa 90
Text: ISL6115, ISL6116, ISL6117, ISL6120 Data Sheet FN9100.3 November 22, 2006 Power Distribution Controllers Features This family of fully featured hot swap power controllers targets applications in the +2.5V to +12V range. The ISL6115 is for +12V control, the ISL6116 for +5V, the
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ISL6115,
ISL6116,
ISL6117,
ISL6120
FN9100
ISL6115
ISL6116
ISL6117
ISL6120
pin diagram of ic 6116
b5 SMD zener
diode aa 90
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Untitled
Abstract: No abstract text available
Text: REVISIONS DCN R EV DESCRIPTION DATE 27645 03 R ED R AW TO JEDEC FO R M AT 0 3/1 5/95 T. VU 27945 04 ADD 4 4 LD 0 6/2 5/95 T. VU 28697 05 0 3 /0 5 /9 6 T. VU 60363 06 CHANGE S TAN D O FF DIM FOR 4 4 LD ADD 3 6 LD A PP R O VED 0 7/2 0/97 AA - .01 5 / . 0 2 0
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PSC-4033
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F0736
Abstract: No abstract text available
Text: Professional TKmmers S M D □ Meggftt Citec 4mm multiturn potentiometer Key features • full eleven turns • sealed fo r dip and wave SM D D im m ers • w ave/reflow so ld e r • only 4m m square • flush adjustm ent screw type 3240 series • top adjust o r low pro file styles
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F0736
F0736
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DB25SN
Abstract: JIS-C-6367 DA-15S-UL DAF-15S-N DC-37S DSP30 da-15p pin DB25PU DC-37SU DC37S
Text: J A E ELECTRONICS INC EIE D • 4fi134bS D 0 0 0 4 1 4 fi ■ "X " D * "N /D * = U L S O LD E R //-/ 7 - & 5 SOLDER T Y P E - D M M T - U L . TYPE T Y P I Pin side D * -N /D * -U L Standard Type £ \ 2 - ^ 0 .1 2 0 + 0.0 0 5 Socket side Dimensions when mated
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4fit34bs
00dml4
DB25SN
JIS-C-6367
DA-15S-UL
DAF-15S-N
DC-37S
DSP30
da-15p pin
DB25PU
DC-37SU
DC37S
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Untitled
Abstract: No abstract text available
Text: Elastom er Sealed d im m e r S M D O Meggitt Citec 3mm potentiometer Key features • sm a ll 3m m square size • suited to dip and wave so lder SMD Tkimmers • ce rm e t te ch n o lo g y • suited to so lven t washing • delta te rm in a ls prevent so ld e r bridging
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F0713
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ES 61162
Abstract: CY6117 sp 735L
Text: CY6116 _ CY6117 SEMICONDUCTOR 2048 x 8 Static R/W RAM Features Functional Description • A u to m atic pow er-dow n w hen deselected T h e C Y 6116 an d C Y 6117 are high-perform ance C M O S Static R A M s organized as 2048 w ords by 8 bits. Easy m em ory expan
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CY6116
CY6117
add7-45LM
6117-55LM
38-00055-C
ES 61162
sp 735L
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M6116
Abstract: MCM61L16 5201G MCM61L16-15 MCM6116 MCM61L16-20 m6116-12
Text: M O TO R O LA 16K BIT STATIC RANDOM ACCESS MEMORY The M CM 6116 is a 16,384-bit S ta tic Random Access M em o ry organized as 2048 w o rd s by 8 bits, fabricated using M o to ro la 's h ig h perform ance silicon -ga te C M O S IH C M O S te c h n o lo g y . It uses a design
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MCM6116
384-bit
MCM6116
MCM61L16
M6116
5201G
MCM61L16-15
MCM61L16-20
m6116-12
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MA 6116A
Abstract: 8116A
Text: CY6116A CYPRESS SEMICONDUCTOR 2048 x 8 Static R/W RAM Features Functional Description • Autom atic power-down when deselected T h e C Y 6116A is a high-perform ance C M O S static R A M organized as 2048 w ords by 8 bits. E asy m em ory expansion is provided by an active L O W chip e nable
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CY6116A
MA 6116A
8116A
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Untitled
Abstract: No abstract text available
Text: www.teleqaertner.com 125-120 7157 Fax: +49 125-0 7157 Mechanische Eigenschaften cable group Kabelgruppe interface dimensions acc. to assembly instruction mating life coupling torque Steckgesicht nach Montageanleitung Steckzyklen Kupplungsdrehmoment IEC 61169-16
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LCFS114-50JA
F6-50
Mater2006
2002/95/EC
J01020G
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IH6116CPI
Abstract: DG506 BA 5053 AD7506 HI-506 IH6116 IH6116CDI IH6116MDI DG-506
Text: IH 6116 16 Channel CMOS Analog M ultiplexer One out of 16 FEATURES GENERAL DESCRIPTION • Pin compatible with DG506, HI-506 & AD7506 • Ultra Low Leakage — iD(off) £ 100pA • ±11 analog signal range • r D S ( o n ) <700 ohms over full signal and temperature
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IH6116
DG506,
HI-506
AD7506
100pA
100/uA
IH6116
DG506.
inIH6116
IH6116CPI
DG506
BA 5053
AD7506
HI-506
IH6116CDI
IH6116MDI
DG-506
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EL6116
Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048
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L6116
L6116)
L6116-L)
L6116
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
24-pin
EL6116
6116 RAM
ci 6116
ram 6116
IDT6116
memory 6116
6116 memory
6116 ram 2k
chip diagram of ram chip 6116
L6116CMB25
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SFH 255 FA
Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite
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068000-A5018
Q68000-A5017
Q68000-A5707
Q62703-N26
Q62703-N51
Q62703-N52
Q68000-A7302
Q68000-A7303
Q68000-A7304
Q68000-A8086
SFH 255 FA
LR 2703
LY3360K
dl340m
FP310L100-75
Q68000-A8452
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vq3001
Abstract: No abstract text available
Text: m essb VQ3001 s e rie s N- and P- Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ3001J 30/-30 ' X VQ3001P 30/-30 1 TOP VIEW •d (A) PACKAGE N = 1 P = 2 N = 0.85 P = 0.6 Plastic
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VQ3001
VQ3001J
VQ3001P
14-PIN
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Untitled
Abstract: No abstract text available
Text: in te ftil HUF76423D3, HUF76423D3S D a ta S h e e t O c to b e r 1999 F ile N u m b e r 4 7 0 7 .2 Ultra^f 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance ' DRAIN
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HUF76423D3,
HUF76423D3S
O-251AA
O-252AA
HUF76423D3
HUF76423D3S
O-252AA
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VP2410
Abstract: vP2410B
Text: SILICONIX INC 1ÔE D 0254735 0014127 1 CY'Siliconix VP2410 SE R IE S JLJm in c o rp o ra te d P-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS fDS(ON) (Í1 ) (V) Id (A) PAC KA G E VP2410L -2 4 0 10 -0.18 TO-92 VP241QB
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VP2410
VP2410L
VP241QB
O-205AF
vP2410B
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DESCRIPTION 6116
Abstract: BLVD MARK F282 0.1 J 250 MKT
Text: PACKAGE DIAGRAM OUTLINES FL.-.TPACK REV DCN DESCRIPTION DATE 00 20433 ORIGINAL ISSÜ E 0 5 /0 6 /9 1 APPROVED E3 T E2 1 E3 I 1. 2. 3. u m t t w v D L S P E C IF IE D A LL DIM EN S IONS A R E IN INCHES. BSC - B A SIC LEAD S P A C IN G B ETW EEN C E N T E R S .
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f16-1
40HDRWISD
F84-3
DESCRIPTION 6116
BLVD
MARK F282
0.1 J 250 MKT
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8B103
Abstract: 8Z0054 8U2011 8N3021 8H2021 8Z0143 8Z0113 8N2021 8A1021 8A2121
Text: Honeywell MICRO SWITCH Data Sheet F 172 Second Issue Series 8 Miniature Manual Switches Description Series 8 is a line o f m in ia tu re to g gle, rocker, paddle and p u sh b u t to n sw itch e s rated 6 A -1 2 5V a c resistive, 3 A -2 5 0V a c resistive or
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lg 6154
Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp
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Q60215-Y62
O60215-Y63-S1
Q60215-Y65
Q60215-Y66
Q60215-Y67
Q60215-Y111-S4
Q60215-Y111-S5
Q60215-Y1111
Q60215-Y1112
Q60215-Y1113
lg 6154
KTY 10-8
DL1416
KTY 20-5
DL440
O62902-B156-F222
Q62901-B64
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611-100
Abstract: No abstract text available
Text: Aßw A OSM SMA Jack Terminations 2002/2004 Series O S M Miniature Jack Coaxial Terminations feature models offering extrem ely low V S W R at frequencies up to 26.5 G H z. T h e small size of these m odels m akes them ideal for high-density system application and laboratory use.
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p30N06LE
Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
Text: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN
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RFP30N06LE
O-220AB
RFP30N06LE
07e-3
03e-7)
38e-3
64e-5)
75e-3
90e-6)
p30N06LE
P30N06
RFP30N06LE MOSFET
P30N06L
107E3
p30n0
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M37735S4LHP I . 16-BIT CMOS MICROCOMPUTER DESCRIPTION • I n t e r r u p t s . 19 typ e s, 7 levels T h e M 3 7 7 3 5 S 4 L H P is a m ic ro c o m p u te r us in g th e 7 7 0 0 F a m ily core.
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M37735S4LHP
16-BIT
80P6Dâ
LQFP80-P-12I2-0
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