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    Vishay Siliconix VQ3001P-E3

    MOSFET 2N/2P-CH 30V 0.85A
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    DigiKey VQ3001P-E3 Tube 25
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    Vishay Intertechnologies VQ3001P

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    Bristol Electronics VQ3001P 82
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    Vishay Intertechnologies VQ3001P-E3

    Trans MOSFET NPCH 30V 085A06A 14Pin SBCDIP (Alt: VQ3001P-E3)
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    EBV Elektronik VQ3001P-E3 26 Weeks 25
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    Vishay Siliconix VQ3001P

    SILICONIX VQ3001P
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    VQ3001 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VQ3001 Supertex N-Channel and P-Channel Quad Power MOSFET Arrays Original PDF
    VQ3001J Siliconix N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Original PDF
    VQ3001J Vishay Intertechnology Dual N-/Dual P-Channel 30-V (D-S) MOSFET Original PDF
    VQ3001J Unknown FET Data Book Scan PDF
    VQ3001J Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ3001J Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ3001J Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ3001N6 Supertex N- and P-Channel Quad Power MOSFET Arrays Original PDF
    VQ3001N6 Supertex N- and P-Channel Quad Power MOSFET Arrays Scan PDF
    VQ3001P Vishay Intertechnology Dual N-/Dual P-Channel 30-V (D-S) MOSFET Original PDF
    VQ3001P Unknown FET Data Book Scan PDF
    VQ3001P Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ3001P Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ3001P Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ3001P Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ3001P-2 Vishay Transistor Mosfet N-CH/P-CH 30V 0.85A/0.6A 14DIP Original PDF
    VQ3001P-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N/2P-CH 30V 850MA 14DIP Original PDF

    VQ3001 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VQ3001

    Abstract: No abstract text available
    Text: lJì Supertex inc. TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information Standard Commercial Devices V ^ D S ON GS |ttl) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip*


    OCR Scan     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 TQ3001N6 VQ7254N6 VQ3001N7 TQ3001N7 PDF

    11105 IC

    Abstract: ic 11105 circuits voltage
    Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary fDS on M ax (£2) V(BR)DSS M i“ (Y) I d (A) . Vos(»h) (V) N-Channel 30 1 @ V GS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V GS= - 1 2 V - 2 to -4 .5 -0 .6


    OCR Scan     		VQ3001J/3001P P-38283-- 11105 IC ic 11105 circuits voltage PDF

    VN0300M

    Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
    Text: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)


    OCR Scan     		VNMH03 80pisâ 300pis, VN0300D, VN0300M, VP1001P, VQ1001J, VQ3001P, VQ3001J, VQ7254P, VN0300M VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03 PDF

    VQ3001J

    Abstract: VQ3001P
    Text: VQ3001J/3001P N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications


    Original     		VQ3001J/3001P P-38283--Rev. 15-Aug-94 VQ3001J VQ3001P PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001N6 Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)30 I(D) Max. (A)-.65 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.5


    Original     		VQ3001N6 Junc-Case83 PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001N7 Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)30 I(D) Max. (A)-.65 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0


    Original     		VQ3001N7 Junc-Case62 PDF

    VQ3001

    Abstract: TQ3001 VQ3001N6 VQ7254 VQ7254N6 FAST DMOS FET Switches
    Text: VQ3001 VQ7254 N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Ω 2.0V -3.0V VQ3001N6 20V 3.0Ω 2.0V -3.0V VQ7254N6 BVDSS / BVDGS Order Number / Package


    Original     		VQ3001 VQ7254 14-Pin VQ3001N6 VQ7254N6 TN06L TP06L VQ3001/VQ7254 VQ3001 TQ3001 VQ3001N6 VQ7254 VQ7254N6 FAST DMOS FET Switches PDF

    MOSFET 923 54

    Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
    Text: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V


    OCR Scan     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 VQ7254N6 TQ3001N7 250mA VQ7254 MOSFET 923 54 N06L quad N-Channel MOSFET dip package 40v N- and P-Channel dip PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic VQ3001J/3001P S e m i c o n d u c t o r s N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS M in (V ) r o s i » ) M a x (fi) V e s o u ) (V ) I d (A ) N -Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Chan nel -3 0 2 @ V Gs = - 1 2 V


    OCR Scan     		VQ3001J/3001P S-52426-- 14-Apr-97 S-52426--Rev. PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS


    Original     		VQ3001J/P 18-Jul-08 PDF

    9907

    Abstract: 9907 a VQ3001J VQ3001P
    Text: VQ3001J/3001P Siliconix NĆ/PĆChannel EnhancementĆMode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) NĆChannel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 PĆChannel -30 2 @ VGS = -12 V -2 to -4.5 -0.6 Features Benefits


    Original     		VQ3001J/3001P P-38283--Rev. 9907 9907 a VQ3001J VQ3001P PDF

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

    Abstract: VQ3001 P-Channel mosfet 40V TQ3001N7 20V P-Channel Power MOSFET DIODE S4 75a p mosfet VQ7254N7 VQ7254N6 DIODE S4 41
    Text: TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 40V 3Ω 2.0V -3.0V VQ3001N6 VQ3001N7 20 Terminal LCC Quad VQ3001NF


    Original     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 VQ3001N7 VQ3001NF TQ3001N6 TQ3001N7 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V VQ3001 P-Channel mosfet 40V TQ3001N7 20V P-Channel Power MOSFET DIODE S4 75a p mosfet VQ7254N7 VQ7254N6 DIODE S4 41 PDF

    TQ3001

    Abstract: VQ3001 VQ3001N6 VQ7254 VQ7254N6 Supertex Quad quad N-Channel MOSFET dip package 2NQ1
    Text: VQ3001 VQ7254 Supertex inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information V GS th R d S (ON) b v dss/ Order Num ber / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Î2 2.0V -3.0V VQ3001N6 20V 3.0Î2 2.0V


    OCR Scan     		VQ3001 VQ7254 14-Pin VQ3001N6 VQ7254N6 VQ3001 300jis TN06L TP06L TQ3001 VQ3001N6 VQ7254 VQ7254N6 Supertex Quad quad N-Channel MOSFET dip package 2NQ1 PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001J Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D)370m @Temp (øC)100 IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0


    Original     		VQ3001J PDF

    VQ3001/VQ7254

    Abstract: No abstract text available
    Text: TQ3001 VQ3001 VQ7254 Surface Mount | N- and P-Channel Quad Power MOSFET Arrays Ordering Information R b v dss/ dS VGS th (ON) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad 40V 3Q


    OCR Scan     		TQ3001 VQ3001 VQ7254 VQ3001NF TQ3001NF 14-Pin VQ3001N6 TQ3001N6 VQ7254N6 VQ3001/VQ7254 PDF

    vq3001

    Abstract: No abstract text available
    Text: m essb VQ3001 s e rie s N- and P- Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ3001J 30/-30 ' X VQ3001P 30/-30 1 TOP VIEW •d (A) PACKAGE N = 1 P = 2 N = 0.85 P = 0.6 Plastic


    OCR Scan     		VQ3001 VQ3001J VQ3001P 14-PIN PDF

    VQ3001J

    Abstract: VQ3001P 70221
    Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS


    Original     		VQ3001J/P 16-Jul-01 S-04279--Rev. VQ3001J VQ3001P 70221 PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001NF Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)30 I(D) Max. (A)-.65 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0


    Original     		VQ3001NF Junc-Case125 PDF

    70221

    Abstract: mosfet vq3001p VQ3001J VQ3001P
    Text: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications


    Original     		VQ3001J/3001P S-52426--Rev. 14-Apr-97 70221 mosfet vq3001p VQ3001J VQ3001P PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001P Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D)370m @Temp (øC)100 IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0


    Original     		VQ3001P PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TQ3001 VQ3001 VQ7254 S urface M ount N- and P-Channel Quad Power MOSFET Arrays Ordering Information V R DS ON GS (ttl) Order Number / Package (max) (max) Q1 + 0 2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad


    OCR Scan     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 TQ3001N6 VQ7254N6 VQ3001NF TQ3001NF PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V (B R ) D S S M i n ( V ) r D S (o n ) Max ( Q ) Id (A) V G S (th )(V ) N-Channel 30 1 @ VGS= 12V 0.8 to 2.5 0.85 P-C hannel -3 0 2 @ Vq s » -1 2 V - 2 to -4 .5 -0 .6 FEATURES


    OCR Scan     		VQ3001J/P S-04279-- 16-Jul-01 16-Ju PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features


    OCR Scan     		VQ3001J/3001P P-38283-- PDF

    VP0300M

    Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
    Text: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT


    OCR Scan     		80hs-30 VP0300M, VP0300L, VQ2001P, VQ2001J VQ3001P, VQ3001J, VQ7254P, VQ7254J VPMH03 VP0300M VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03 PDF