VQ3001J
Abstract: VQ3001P
Text: VQ3001J/3001P N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications
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VQ3001J/3001P
P-38283--Rev.
15-Aug-94
VQ3001J
VQ3001P
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Untitled
Abstract: No abstract text available
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS
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VQ3001J/P
18-Jul-08
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9907
Abstract: 9907 a VQ3001J VQ3001P
Text: VQ3001J/3001P Siliconix NĆ/PĆChannel EnhancementĆMode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) NĆChannel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 PĆChannel -30 2 @ VGS = -12 V -2 to -4.5 -0.6 Features Benefits
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VQ3001J/3001P
P-38283--Rev.
9907
9907 a
VQ3001J
VQ3001P
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Untitled
Abstract: No abstract text available
Text: VQ3001J Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D)370m @Temp (øC)100 IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0
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VQ3001J
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VQ3001J
Abstract: VQ3001P 70221
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS
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VQ3001J/P
16-Jul-01
S-04279--Rev.
VQ3001J
VQ3001P
70221
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70221
Abstract: mosfet vq3001p VQ3001J VQ3001P
Text: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications
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VQ3001J/3001P
S-52426--Rev.
14-Apr-97
70221
mosfet vq3001p
VQ3001J
VQ3001P
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s4 vishay
Abstract: VQ3001J VQ3001P 70221
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS
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VQ3001J/P
18-Jul-08
s4 vishay
VQ3001J
VQ3001P
70221
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52426
Abstract: 3001P VQ3001J VQ3001P
Text: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications
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VQ3001J/3001P
S-52426--Rev.
14-Apr-97
52426
3001P
VQ3001J
VQ3001P
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Untitled
Abstract: No abstract text available
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS
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VQ3001J/P
08-Apr-05
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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11105 IC
Abstract: ic 11105 circuits voltage
Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary fDS on M ax (£2) V(BR)DSS M i“ (Y) I d (A) . Vos(»h) (V) N-Channel 30 1 @ V GS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V GS= - 1 2 V - 2 to -4 .5 -0 .6
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VQ3001J/3001P
P-38283--
11105 IC
ic 11105 circuits voltage
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VN0300M
Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
Text: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)
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VNMH03
80pisâ
300pis,
VN0300D,
VN0300M,
VP1001P,
VQ1001J,
VQ3001P,
VQ3001J,
VQ7254P,
VN0300M
VN0300D
VQ7254J
VQ7254P
25XX
VP1001P
VQ1001J
VQ3001J
VQ3001P
VNMH03
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Untitled
Abstract: No abstract text available
Text: Temic VQ3001J/3001P S e m i c o n d u c t o r s N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS M in (V ) r o s i » ) M a x (fi) V e s o u ) (V ) I d (A ) N -Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Chan nel -3 0 2 @ V Gs = - 1 2 V
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VQ3001J/3001P
S-52426--
14-Apr-97
S-52426--Rev.
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vq3001
Abstract: No abstract text available
Text: m essb VQ3001 s e rie s N- and P- Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ3001J 30/-30 ' X VQ3001P 30/-30 1 TOP VIEW •d (A) PACKAGE N = 1 P = 2 N = 0.85 P = 0.6 Plastic
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VQ3001
VQ3001J
VQ3001P
14-PIN
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Untitled
Abstract: No abstract text available
Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features
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VQ3001J/3001P
P-38283--
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VP0300M
Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
Text: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT
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80hs-30
VP0300M,
VP0300L,
VQ2001P,
VQ2001J
VQ3001P,
VQ3001J,
VQ7254P,
VQ7254J
VPMH03
VP0300M
VP0300L
VQ2001J
VQ2001P
VQ3001J
VQ3001P
VQ7254J
VQ7254P
IN4080
VPMH03
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vp0300m
Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
vp0300m
VP0300B
VP0808L
VQ2001P
VQ2004P
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irf540 TTL
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
irf540 TTL
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
IRF642
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VP0808B
Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP0300B
VP0300M
VP0808L
VQ2001P
VQ2004P
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VN0300M
Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
VN0300M
siliconix VN10KM
VN0606M
25XX
VN0300D
VP1001P
VQ1001J
VQ3001J
VQ3001P
VQ7254J
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BSR78
Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
BSR78
VP0300M
VP0808L
041 itt diode
VP0300B
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VP0808M
Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VQ2006P
VP0300B
VP0300M
VP0808L
VQ2001P
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VP0808B
Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP0300B
VP0300M
VP0808L
VQ2001P
VQ2004P
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VP100
Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP100
VP1001P
VP0300B
VP0300M
VP0808L
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