P09N03
Abstract: No abstract text available
Text: PRELIMINARY PMC-Sierra, Inc. PM9311/2/3/5 ETT1 CHIP SET Data Sheet PMC-2000164 ISSUE 1 ENHANCED TT1™ SWITCH FABRIC PM9311/2/3/5 Enhanced TT1 Chip Set Enhanced TT1 Switch Fabric Datasheet Preliminary: April 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE
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PMC-2000164
PM9311/2/3/5
P09N03
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MIP3226D3R3M
Abstract: MIP3226D4R7M 16V DC to 12v dc 5 amp converter circuit diagram 3526 NP03SB6R8M NR3012T MIP3226 LTC3526L MIPF2520D4R7 fb 1225
Text: LTC3526L/LTC3526LB 550mA 1MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells VIN Start-Up Voltage: 680mV
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LTC3526L/LTC3526LB
550mA
100mA
200mA
680mV
LTC3526L)
LT3526LB)
3526L/LTC3526LB
SC-70
LTC3525L-3
MIP3226D3R3M
MIP3226D4R7M
16V DC to 12v dc 5 amp converter circuit diagram
3526
NP03SB6R8M
NR3012T
MIP3226
LTC3526L
MIPF2520D4R7
fb 1225
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a1273 transistor DATA
Abstract: a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270
Text: 80C186EB/80C188EB Microprocessor User’s Manual 80C186EB/80C188EB Microprocessor User’s Manual February 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions
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80C186EB/80C188EB
sa-16
a1273 transistor DATA
a1273 transistor
a1273 transistor scheme
transistor A1267
a1273
80188 Programmers Reference Manual
A1266
transistor a1271
transistor A1273
transistor A1270
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A1306 TRANSISTOR
Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor
Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
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80C186EC/80C188EC
82C59A
Index-10
A1306 TRANSISTOR
A1273
A1266
transistor a1266
a1273 transistor
a1232
transistor A1267
transistor a1276
a1273 transistor scheme
a1273 y transistor
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Hitachi DH* motor circuit
Abstract: HA13491S
Text: H A 1 3 4 9 1 S -Three-Phase Motor Driver With Speed Discriminator Description HA13491S T h e H A 1 3 4 9 1 S is a 3 -p h asc b ru sh lcss m o to r d riv e IC de sig n ed for use as a 5- and 12-volt H D D sp in d le m otor driver. It has the fo llo w in g functions and features.
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12-volt
HA13491S
P-26DT)
Hitachi DH* motor circuit
HA13491S
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transistor D128
Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes
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TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L
TC518129B
TheTC518129B
D-132
TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL
D-133
transistor D128
TC518129
D128 transistor
transistor d133
ksh 200 TRANSISTOR equivalent
TRANSISTOR 80l
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CDB4222
Abstract: CS4222 CS4222-KS 20-bit audio codec
Text: CS4222 A Cirrus Logic Company 20-Bit Stereo Audio Codec with Voiume Control Features Description 99 dB 20-bit A/D Converters 99 dB 20-bit D/A Converters 110 dB DAC Signal-to-Noise Ratio EIAJ Analog Volume Control - 0.5 dB Step Resolution - 113.5 dB Attenuation
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CS4222
20-Bit
48kHz
CS4222
20-bit,
DS236PP3
254b3E4
CDB4222
CS4222-KS
20-bit audio codec
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mg80c186
Abstract: 523ap order 231369 M801 80C186EB
Text: in te i M80C186EB-16, -13, -8 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR • Full Static Operation • True CMOS Inputs and Outputs • —55°C to + 125°C Operating Temperature Range • Integrated Feature Set — Low-Power Static CPU Core — Two Independent UARTs each with
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M80C186EB-16,
16-BIT
M80C186EB-16)
M80C186EB-13)
M80C186EB-8)
mg80c186
523ap
order 231369
M801
80C186EB
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Untitled
Abstract: No abstract text available
Text: * 1 SCS-THOMSON / R a n a @ i i L i g r e w n e § S T L C 5 4 1 1 2B1Q U INTERFACE DEVICE ADVANCE DATA G ENERAL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANS CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN
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PLCC44
STLC5411FN
tt92SrS4t9
7T2T237
STLC5411
GGb372S
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74hct124
Abstract: MT9160AE U317A be41
Text: i s o 2- c m o s M ITEL MT9160 5 Volt Multi-Featured Codec MFC Preliminary Information Features ISSUE 3 May 1995 O rdering Inform ation • Programmable ji-Law/A-Law Codec and Filters • Programmable CC ITT (G.711)/sign-magnitude coding • Programmable transmit, receive and side-tone
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MT9160
MT9160AE
MT9160AS
MT9160
150pF,
74hct124
U317A
be41
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Untitled
Abstract: No abstract text available
Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416V1000BJ
1Mx16
40SOJ
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns
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KM416C256A/AL/ALL
256Kx
110ns
KM416C256A/AÃ
130ns
KM416C256A/AL/ALL-8
150ns
KM416C256A/AUALL-6
40-LEAD
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Untitled
Abstract: No abstract text available
Text: BR93LC46 BR93LC46A BR93LC46F BR93LC46AF The BR93LC46/F and BR93LC46A/AF are CMOS serial input/output-type memory circuits EEPROMs that can be programmed electrically. Each can store up to 1024 bits in 64 sixteen bit words. Each word can be accessed separately.
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BR93LC46
BR93LC46A
BR93LC46F
BR93LC46AF
BR93LC46/F
BR93LC46A/AF
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13001 LZ
Abstract: SR 13001 PA 13001
Text: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh
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AS4VC1M16E5
42-pin
44/50-pin
AS4VC1M16E5-50JC
AS4VC1M16E5-50TC
AS4VC1M16E5-60JC
AS4VC1M16E5-60TC
13001 LZ
SR 13001
PA 13001
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Untitled
Abstract: No abstract text available
Text: MITEL" CMOS ST-BUS FAMILY Large Digital Switch Preliminary Information Features • • • • • • • • • • • • MT90820 ISSUE 1 2,048 x 2,048 channel non-blocking switching at 8.192 Mb/s Per-channel variable or constant throughput delay
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MT90820
048Mb/s,
096Mb/s
192Mb/s
IEEE-1149
b24T3
QQ11A75
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as4c256k16eo
Abstract: 256KX16 AS4C256K16E0 LO301
Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed
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AS4C256K16E0
256KX16
4C256K16E0-45)
40-pin
I/015
I/014
as4c256k16eo
LO301
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TI AIH
Abstract: R 161 730 000
Text: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 is OKI's CMOS silicon gate process technology.
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MSM51VI7160
576-Word
16-Bit
MSM51V17160
cycles/32ms
TI AIH
R 161 730 000
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WD11C00-13
Abstract: wd11c00
Text: WESTERN O R P O R A DIGITAL T I O N WD11C00-13 C WD11C00-13 ECC Support Device FEATURES • 32-BIT COMPUTER SELECTED POLYNOMIAL • PARALLEL INPUT AND OUTPUT • DATA TRANSFER RATES UP TO 5 MBITS/SEC • RECORD LENGTH UP TO INCLUDING CHECK BYTES • TTL, MOS COMPATIBLE
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WD11C00-13
WD11C00-13
32-BIT
WD11COO-13
wd11c00
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7C130
Abstract: L1314
Text: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each
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CY7C130/CY7C131
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7C140/CY7C141
7C130/CY7C131/CY7C140/
CY7C14
7C130
L1314
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7C106
Abstract: FE 1.1s
Text: CY7C106 P R ELIM IN A RY CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7 C 1 0 6 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d a s 262,144 w o rd s by 4 bits. E a sy m e m o ry ex p a n sio n is
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CY7C106
7C106
FE 1.1s
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7B154
Abstract: No abstract text available
Text: CY7B153 CY7B154 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Expandable 65,536 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7B 153 a n d C Y 7 B 1 5 4 a rc h ig h -p e r fo rm a n c e B iC M O S s ta tic R A M s o rg a n iz e d
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CY7B153
CY7B154
7B154
7B153
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LC3517
Abstract: LC3517B LC3517B-12 lc351 u351 BS1215 sanyo lc3517bm
Text: SANY O S E M I C O N D U C T O R CORP S3E D • 7^707b 00100^ 2^6 M T S A J I Ordering number EN37521 CMOS LSI F SAW O i LC3517B. BM. BS, BL, BML, BSL. 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517B serves devices art silicon-gate CMOS, static
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EN3752]
LC3517B,
2048-word
LC3517B
LC3517BL,
LC3517BML
LC3517BSL
LC3517B/BM/BS-12/15
LC3517
LC3517B-12
lc351
u351
BS1215
sanyo lc3517bm
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MSM5416256
Abstract: No abstract text available
Text: O K I Semiconductor MSII5 4 1 6 2 5 8 A_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word x 16-bit configuration fast page mode type DRAM with EDO. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption
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144-Word
16-Bit
MSM5416258A
40-pin
MSM5416256
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily Tor use in horizontal deflection circuits of colour television receivers.
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BU508DX
OT199
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