LAN TRANSISTOR Search Results
LAN TRANSISTOR Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CS-SASDDP8282-001 |
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Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m | Datasheet | ||
CS-SASDDP8282-000.5 |
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Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m | Datasheet |
LAN TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Lucent Technologies fiber optics cable
Abstract: LUCENT TECHNOLOGIES CAT-5 LAN lucent wdm SWITCH L3 lucent optical switch wireless lan 10 KM Lucent Technologies single mode fiber
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10gb/s 500-600mb/s) 1000-baseT 10-gig Lucent Technologies fiber optics cable LUCENT TECHNOLOGIES CAT-5 LAN lucent wdm SWITCH L3 lucent optical switch wireless lan 10 KM Lucent Technologies single mode fiber | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 0.7±0.1 12.9±0.5 d p lan inc ea se ed lud p lan m m es |
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2002/95/EC) 2SC2631 2SA1123 | |
dec 21140
Abstract: DECchip 21140 21140A 100BASE-FX DECchip+21140
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1140A 1140A 10Mb/s 100Mb/s, CSR15 dec 21140 DECchip 21140 21140A 100BASE-FX DECchip+21140 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi |
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2002/95/EC) 2SA1309A 2SC3311A | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi |
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2002/95/EC) 2SC3311A 2SA1309A | |
Contextual Info: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 R 0.9 R 0.7 1.0 2.0±0.2 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi |
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2SC2636 | |
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 R 0.9 R 0.7 • Absolute Maximum Ratings Ta = 25°C 1.0 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es |
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2SC2206 2SA1254 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi |
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2002/95/EC) 2SC2590 O-126B | |
C1005COG1H101JT
Abstract: Samsung 2N2222 C1005X7R1C103KT MCR01MZsF 2N2907 PNP Transistor RF1K49093 505 transistor TRANSISTOR C144 DSSS transceiver 20dB processing gain AM79C930
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AN9624 HFA3925 HFA3424 HFA3724 ICL7660S RF1K49093 HFA3524A C1005COG1H101JT Samsung 2N2222 C1005X7R1C103KT MCR01MZsF 2N2907 PNP Transistor 505 transistor TRANSISTOR C144 DSSS transceiver 20dB processing gain AM79C930 | |
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi |
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2SA0921 2SA921) 2SC1980 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f |
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2002/95/EC) 2SC5121 | |
MCR01MZsF
Abstract: 505 transistor C1005COG1H101JT SMT0402 Samsung 2N2222 gh c101 C1005X7R1C103KT 2N2907 PNP Transistor MCR01MZSJ0R00 C124-C130
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AN9624 MCR01MZsF 505 transistor C1005COG1H101JT SMT0402 Samsung 2N2222 gh c101 C1005X7R1C103KT 2N2907 PNP Transistor MCR01MZSJ0R00 C124-C130 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 d p lan inc ea se ed lud p lan m m es |
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2002/95/EC) 2SB1599 2SD2457 | |
RJMG
Abstract: 8224 intel 0x150F 82580 nec 2501 RTL 8189 JFM38U1 laser diode specification sheet 81210 0x35A
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1000BASE-T, 100BASE-TX, 10BASE-T 1000Base-SX/ 1000BASE-KX 1000BASE-BX 0x0034; 321027-017EN RJMG 8224 intel 0x150F 82580 nec 2501 RTL 8189 JFM38U1 laser diode specification sheet 81210 0x35A | |
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intel 8203
Abstract: RTL 8188 82580 82575 0x1528 electromagnetic pulse kit INTEL 845 MOTHERBOARD CIRCUIT diagram foxconn ls 36 motherboard manual 8237 direct memory access controller 81217
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1000BASE-T, 100BASE-TX, 10BASE-T 1000Base-SX/ 1000BASE-KX 1000BASE-BX 0x0034; 321027-015EN intel 8203 RTL 8188 82580 82575 0x1528 electromagnetic pulse kit INTEL 845 MOTHERBOARD CIRCUIT diagram foxconn ls 36 motherboard manual 8237 direct memory access controller 81217 | |
July 2002Contextual Info: Test & Measurement Annual July 2002 Standard Ethernet Hub or Switch PC on LAN Ethernet LAN INTERNET 10BASE-T i16 Controller with EI option 10BASE-T "The OPC Specification is a nonproprietary technical specification that defines a set of standard interfaces based |
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10BASE-T RS-232 RS-485 July 2002 | |
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow |
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2SB1503 2SD2276 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll |
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2002/95/EC) 2SC3611 O-126B | |
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow |
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2SA0900 2SA900) 2SC1868 O-126B | |
Contextual Info: Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2250 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow |
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2SB1490 2SD2250 | |
Contextual Info: Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll |
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2SC4606 2SA1762 | |
Laser Diode 850nm 1300nm
Abstract: laser diode mosfet triggering circuit common cathode photodiode MA3286 "Fiber Optic Transmitters" 780NM Laser-Diode automatic laser power control Longwave laser MA328 Semiconductor Laser International
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25Gbps/2 MAX3286/MAX3296 780nm 850nm) 1300nm) Laser Diode 850nm 1300nm laser diode mosfet triggering circuit common cathode photodiode MA3286 "Fiber Optic Transmitters" 780NM Laser-Diode automatic laser power control Longwave laser MA328 Semiconductor Laser International | |
Contextual Info: 19-1249; Rev 1; 11/04 KIT ATION EVALU E L B AVAILA 622Mbps LAN/WAN Laser Driver with Automatic Power Control and Safety Shutdown _Features The MAX3766 is a complete, easy-to-program laser driver for fiber optic LAN transmitters, optimized for |
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622Mbps MAX3766 622Mbps. 25Gbps | |
82558B
Abstract: c65 004 82555 623377-001 BD109 heartbeat sensor intel 82555 lan transistor intel desktop mother board service manual 82558-B
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AP-388) 0101AAA 23-Jan-1998 82558B c65 004 82555 623377-001 BD109 heartbeat sensor intel 82555 lan transistor intel desktop mother board service manual 82558-B |