2SD2457 Search Results

2SD2457

Contextual Info: Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

Contextual Info: Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • High collector-emitter voltage Base open VCEO • Low collector power dissipation PC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open)

2SB1599

Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des

2SB1599G

Abstract: 2SD2457G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

2SD2457

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te

2SD2457G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC

2SB1599

Abstract: 2SD2457
Contextual Info: Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Mini Power type package, allowing downsizing of the equipment

2SD2457

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1

2SA699

Abstract: 2SA699A 2SB1599 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Silicon NPN Epitaxial Planar Type

Abstract: 2SD2457 1y smd 1Y MARKING
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2457 Features High collector-emitter voltage Base open VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2SA699

Abstract: 2SA699A 2SB1599 2SD2457
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors SMD Type Product specification 2SD2457 Features High collector-emitter voltage Base open VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2SD2457

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te

Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC