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    KMM591 Search Results

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    KMM591 Price and Stock

    Samsung Semiconductor KMM591000BN-6

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    Bristol Electronics KMM591000BN-6 2
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    Samsung Semiconductor KMM591000A-7

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    Samsung Semiconductor KMM591000AN-7

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    Samsung Semiconductor KMM591000BN-7

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    Samsung Semiconductor KMM591000A-10

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    KMM591 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM591000-10 Samsung Electronics 1 M x 9 DRAM SIP and SIMM Memory Modules Scan PDF
    KMM591000-12 Samsung Electronics 1 M x 9 DRAM SIP and SIMM Memory Modules Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D B 7^4142 KMM5910Q0BlQ42b 7 QSMÛK DRAM MODULES 1 M X 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: T he Samsung K M M 5 9 1 0 0 0 B is a 1 M b it X 9 Dynamic RAM high de nsity m em ory module. - The Samsung


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    PDF KMM5910Q0B lQ42b KM41C1OOOBJ 20-pin 30-pin 591000B- 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAJ1SUNG ELECTRONICS INC b7E ]> • V^bNlMS DOISOTI bTb ■ S flG K KMM591020BN DRAM MODULES 1Mx9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020BN. is a 1M b itsx9 Dynamic RAM high density memory module. The Samsung KMM591020BN


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    PDF KMM591020BN KMM591020BN. KM44C1000BLJ-1Mx4) 20-pin KM41C1000CLJ1Mx1) 30-pin 22/xF KMM591020BN-6

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7=ib4]i 42 ü ü m 4 7 cl flES DRAM MODULES KMM591020AN 1 M x 9 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020AN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


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    PDF KMM591020AN KMM591020AN KM44C1020ALJ 20-pin KM41C1000BLJ 30-pin 130ns 150ns

    KM41C1000

    Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
    Text: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


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    PDF KMM491000/KMM591000 KMM491000 KMM591000 KM41C1000 20-pin 22/i/F R0286 30-pin simm memory 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12

    KMM591000BN-6

    Abstract: kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KM44C1000BJ KMM591000BN KMM591000B
    Text: KMM591000BN DRAM MODULES 1MX9 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAc I rc KMM591000BN-6 60ns 15ns 110ns KMM591000BN-7 70ns 20 ns 130ns KMM591000BN-8 80ns 20 ns 150ns The KMM591000BN is a Single In-line Memory Module


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    PDF KMM591000BN KMM591000BN-6 KMM591000BN-7 KMM591000BN-8 110ns 130ns 150ns KMM591000BN KM44C1000BJ kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KMM591000B

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


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    PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


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    PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
    Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C


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    PDF 1Mx32 1Mx33 1Mx36 1Mx40 2Mx32 2Mx36 1Mx9 DRAM 30-pin SIMM KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 4m dram 72-pin simm 32 DRAM 30-pin SIMM

    KM41C1000AJ-1M

    Abstract: km41c1000aj KMM591000N
    Text: KMM591000N DRAM MODULES 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM591000N is a 1M bit x 9 D ynam ic RAM high de nsity m em ory m odule. The Sam sung K M M 5 9 1 0 0 0 N c o n s is t o f tw o 4M b it D R A M s


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    PDF KMM591000N KMM591000N KM44C1000J-1M 20-pin KM41C1000AJ-1M 30-pin KMM591000N-8 KMM591000N-10 km41c1000aj

    KMM591000A

    Abstract: KMM491000A-10 KMM491000A-8 30-pin simm memory
    Text: SAMSUNG SEMICONDUCTOR INC S3E D 7^4145 KMM491000A/KMM591000A 0Q0ÔS31 4 I MEMORY MODULES 1 M x 9 DRAM SIP and S IM M Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate 0 , Q and CAS for Parity


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    PDF KMM491000A/KMM591000A KMM491000A KMM591000A KM41C1000AJ 20-pin 7Tb4142 M491OOOA/KMM591OOOA KMM591000 KMM491000A KMM491000A-10 KMM491000A-8 30-pin simm memory

    Untitled

    Abstract: No abstract text available
    Text: KMM591020AN DRAM MODULES 1 M x 9 DRAM SIM M Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: I rac tcAC tnc 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns KMM591020AN-7 KMM591020AN-8 KMM591020AN-10 • • • • • •


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    PDF KMM591020AN KMM591020AN-7 KMM591020AN-8 KMM591020AN-10 100ns 130ns 150ns 180ns KMM591020AN

    TCA 290

    Abstract: 41C1000 km44c1000aj 591000AN
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


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    PDF KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj

    41C1000

    Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
    Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and


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    PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 1 6 M x 9 D R A M S IM M , 4K Refresh , 5V Using 16M D R A M with 4 0 0 mil P ackage GENERAL DESCRIPTION The S am sung K M M 5916000A is a 16M bit x 9 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The


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    PDF KMM5916000A/AT 916000A 16Mx1bit 24-pin 30-pin KMM5916000A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


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    PDF KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DG1S234 7T2 MSriGK KMM5916100/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAC tRC 60ns 15ns 110ns KMM5916100-7 70ns 20 ns 130ns KMM5916100-8 80ns


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    PDF DG1S234 KMM5916100/T 110ns KMM5916100-7 130ns KMM5916100-8 KMM5916100/T KM41C16100/T 24-pin

    Untitled

    Abstract: No abstract text available
    Text: SAM SUNG E L E C T R O N I C S INC b7E D O D I S Ö E T StB KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM591000C is a 1M b i t x 9 Dynamic RAM high density memory module The S a m s u n g


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    PDF KMM591000C KMM591000C 591000C 1000C 20-pin 30-pin 110ns KMM591000C-7 130ns KMM591000C-8

    irp 540

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DESC RIPTIO N The Samsung KMM5916000A is a 16M bit x 9 FEATURES • Performance Range: Dynamic RAM high density memory module. The


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    PDF KMM5916000A/AT 16Mx9 KMM5916000A 16Mx1bit 24-pin 30-pin irp 540

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM591000CN dram simm memory module samsung 30-pin 44C1000CJ KMM591000
    Text: DRAM MODULE 1 Mega Byte KMM591OOOCN Fast Page Mode 1Mx9 DRAM SIMM , 1K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM591 OOOCN is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOCN consists of two CMOS • Performance Range:


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    PDF KMM591OOOCN KMM591 20-pin 30-pin KMM591000CN 1Mx9 DRAM 30-pin SIMM dram simm memory module samsung 30-pin 44C1000CJ KMM591000

    KM41C1000

    Abstract: KMM591000 connector SAMSUNG 30 PIN 30 pin SIP dram memory 30-pin simm memory KMM591001 simm 30-pin 9-bit
    Text: S AHSUNG SEMICONDUCTOR INC AU ñ H l . . PRELIMINARY SPECIFICATION KM M491000/KM M591000 KMM491001/KMM591001 MEMORY MODULES 1 M x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • N inth device has separate D, Q and CAS or


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    PDF M491000/KM M591000 KMM491001/KMM591001 KMM491000, KMM491001, KMM591000 KMMM591001 KM41C1000/1 20-pin 22/iF KM41C1000 connector SAMSUNG 30 PIN 30 pin SIP dram memory 30-pin simm memory KMM591001 simm 30-pin 9-bit

    KMM591000C8

    Abstract: KMM591000C KMM591000C7 KMM591000C-7
    Text: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    PDF KMM591000C 110ns 130ns 150ns KMM591000C KM41C1000C 20-pin 30-pin KMM591000C8 KMM591000C7 KMM591000C-7

    M5916

    Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
    Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~KMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5


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    PDF 11Mx9 KMM581000C KMM584Q0 KMM594000C-5 HKMM58100 KMM591000CN-7 M584Q00C-6 jKMM59400QC-6 KMM533100 KMM5361000C2/C2G M5916 533410 M5402 KMM591000CN-7 KMM5334100

    41C1000

    Abstract: KMM591000AN 41C1000BJ
    Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


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    PDF MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte Preliminary KMM591 6000AK Fast Page Mode 16Mx9 DRAM S IM M , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KMM5916000AK is a 16M bit x 9 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The


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    PDF KMM591 6000AK 16Mx9 KMM5916000AK 916000A 16Mx1 24-pin 5916000AK M5916000AK