KMM374S403CT Search Results

Contextual Info: KMM374S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.

KMM374S403CTS-G8

Abstract: KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct
Contextual Info: PC100 Unbuffered DIMM KMM374S403CTS KMM374S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

km48s2020ct

Abstract: KMM374S403CTL-G0 KM48S2020
Contextual Info: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM374S403CT

Abstract: KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39
Contextual Info: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.

Contextual Info: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V

Contextual Info: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.

Contextual Info: KMM374S403CT PC100 SDRAM MODULE KMM374S403CT SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM374S403CTL PC66 SDRAM MODULE KMM374S403CTL SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTL is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM374S403CT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 Feb. 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V

KM48S2020CT-G10

Abstract: KMM374S403CTL-G0
Contextual Info: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KM48S2020CT G10

Abstract: KMM374S403CT KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL
Contextual Info: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .