KM68B1002 Search Results

KM68B1002J-10

Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
Contextual Info: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM KM68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

68B1002J-12

Contextual Info: fÇ? SAMSUNG KM68B1002 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES T h l K M 68B1002 is a 1 ,048,576-bit high­ speed static random access m em ory o r­ ganized as 131,072 words by 8 bit. T he K M 68B1002 uses eight com m on input and output lines and has an output enable pin

Contextual Info: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common Input and output lines and has an output enable pin which operates

KM68B1002-10

Contextual Info: SAMSUNG ELECTRONICS INC b4E T> m T T b M m E [][]:L422G 200 PRELIMINARY KM68B1002 BiCMOS SRAM 131,072 WORD X 8 Bit FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 10mA (max.)

Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s Tim e: 8, 9 , 1 0 , 1 2 , 15n s M ax. • Low P ow er D issipation S tandb y (TTL) : 60m A (M ax.) The KM68B1002 is a 1,048,576-bit high-speed S tatic

68B10

Abstract: KM688 KM68B1002-8
Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)

Contextual Info: KM68B1002 BiCMOS SRAM 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa st A cce ss T im e 8 ,1 0 ,1 2 ,1 5 n s M a x. • L ow P o w e r D issip a tio n S ta n d b y (T T L) : 6 0 m A (m a x.) (C M O S ): 1 0 m A (m a x .) O p e ra tin g K M 6 8 B 1 0 0 2 J -8 : 1 7 5 m A (M a x .)

ort01

Contextual Info: KM68B1002 BiCMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 80mA(Max.) (CMOS): 10mA(Max.) Operating KM68B1002 - 8 : 175mA(Max.) KM68B1002 -1 0 : 165mA{Max.)

68B10

Contextual Info: PRELIMINARY KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e: 10, 12ns m ax. • Low P o w er D issipation Standby (TTL) : 60m A (m ax.) (C M O S): 10m A (m ax.) O p eratin g K M 68B 1002J-10: 160m A (m ax.)

Contextual Info: KM68B1002 BiCMOS SRAM 128Kx8 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10 nnA(max.) Operating KM68B1002J-8 :175mA(Max.) KM68B1002J-10: 165 mA(Max )

A400M

Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)

KM68B1002J-10

Abstract: KM68B1002J-12 KM68B1002J-15 KM68B1002J-8 68B10 KM68B1002-15
Contextual Info: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common input and output lines and has an output enable pin which operates

Contextual Info: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T 'ib M m E D C IlTfafel 41T ■ CMOS SRAM KM641005 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KM68B1002-10

Contextual Info: ö fS A M SU N G ELECTRONICS KM 64B1002 262,144 WORD X 4 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1002 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. • Fast Access Time 10,12ns max. • Low Power Dissipation

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100